MOS charge pumpvin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100nsvdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100nsvbb 0 7 dc 0v pulse 0 5  0ns 5ns 5ns 50ns 100nsrd 6 2 10km1 5 4 3 7 mmod w=100umvs 3 2 0vc 2 1 0c2 1 0 10pf.ic v(3)=1.0.tran 2ns 200ns.options acct bypass=1.print tran v(1) v(2).model mmod numos+ x.mesh n=1 l=0+ x.mesh n=3 l=0.4+ x.mesh n=7 l=0.6+ x.mesh n=15 l=1.4+ x.mesh n=19 l=1.6+ x.mesh n=21 l=2.0++ y.mesh n=1 l=0+ y.mesh n=4 l=0.015+ y.mesh n=8 l=0.05+ y.mesh n=12 l=0.25+ y.mesh n=14 l=0.35+ y.mesh n=17 l=0.5+ y.mesh n=21 l=1.0++ region num=1 material=1 y.l=0.015+ material num=1 silicon+ mobility material=1 concmod=sg fieldmod=sg+ mobility material=1 elec major+ mobility material=1 elec minor+ mobility material=1 hole major+ mobility material=1 hole minor++ region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5+ material num=2 oxide++ elec num=1 ix.l=18 ix.h=21   iy.l=4  iy.h=4+ elec num=2 ix.l=5  ix.h=17   iy.l=1  iy.h=1+ elec num=3 ix.l=1  ix.h=4    iy.l=4  iy.h=4+ elec num=4 ix.l=1  ix.h=21   iy.l=21 iy.h=21++ doping unif n.type conc=1e18   x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25+ doping unif n.type conc=1e18   x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25+ doping unif p.type conc=1e15   x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0+ doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05++ models concmob fieldmob+ method onec.end