/* * vivi/include/mtd.h: * * Based on linux/include/linux/mtd/mtd.h * * $Id: mtd.h,v 1.1.1.1 2004/02/04 10:37:38 laputa Exp $  */#ifndef __VIVI_MTD_MTD_H__#define __VIVI_MTD_MTD_H__#include "config.h"#include <types.h>struct erase_info_user {	u_int32_t start;	u_int32_t length;};struct mtd_oob_buf {	u_int32_t start;	u_int32_t length;	unsigned char *ptr;};#define MTD_CHAR_MAJOR 90#define MTD_BLOCK_MAJOR 31#define MAX_MTD_DEVICES 16#define MTD_ABSENT		0#define MTD_RAM			1#define MTD_ROM			2#define MTD_NORFLASH		3#define MTD_NANDFLASH		4#define MTD_PEROM		5#define MTD_OTHER		14#define MTD_UNKNOWN		15#define MTD_CLEAR_BITS		1       // Bits can be cleared (flash)#define MTD_SET_BITS		2       // Bits can be set#define MTD_ERASEABLE		4       // Has an erase function#define MTD_WRITEB_WRITEABLE	8       // Direct IO is possible#define MTD_VOLATILE		16      // Set for RAMs#define MTD_XIP			32	// eXecute-In-Place possible#define MTD_OOB			64	// Out-of-band data (NAND flash)#define MTD_ECC			128	// Device capable of automatic ECC// Some common devices / combinations of capabilities#define MTD_CAP_ROM		0#define MTD_CAP_RAM		(MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)#define MTD_CAP_NORFLASH        (MTD_CLEAR_BITS|MTD_ERASEABLE)#define MTD_CAP_NANDFLASH       (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)#define MTD_WRITEABLE		(MTD_CLEAR_BITS|MTD_SET_BITS)// Types of automatic ECC/Checksum available#define MTD_ECC_NONE		0 	// No automatic ECC available#define MTD_ECC_RS_DiskOnChip	1	// Automatic ECC on DiskOnChip#define MTD_ECC_SW		2	// SW ECC for Toshiba & Samsung devicesstruct mtd_info_user {	u_char type;	u_int32_t flags;	u_int32_t size;	 // Total size of the MTD	u_int32_t erasesize;	u_int32_t oobblock;  // Size of OOB blocks (e.g. 512)	u_int32_t oobsize;   // Amount of OOB data per block (e.g. 16)	u_int32_t ecctype;	u_int32_t eccsize;};struct region_info_user {	u_int32_t offset;		/* At which this region starts, 					 * from the beginning of the MTD */	u_int32_t erasesize;		/* For this region */	u_int32_t numblocks;		/* Number of blocks in this region */	u_int32_t regionindex;};#define MTD_ERASE_PENDING      	0x01#define MTD_ERASING		0x02#define MTD_ERASE_SUSPEND	0x04#define MTD_ERASE_DONE          0x08#define MTD_ERASE_FAILED        0x10struct erase_info {	struct mtd_info *mtd;	u_int32_t addr;	u_int32_t len;	u_long time;	u_long retries;	u_int dev;	u_int cell;	void (*callback) (struct erase_info *self);	u_long priv;	u_char state;	struct erase_info *next;};struct mtd_erase_region_info {	u_int32_t offset;			/* At which this region starts, from the beginning of the MTD */	u_int32_t erasesize;		/* For this region */	u_int32_t numblocks;		/* Number of blocks of erasesize in this region */};struct mtd_info {	u_char type;	u_int32_t flags;	u_int32_t size;	 // Total size of the MTD	/* "Major" erase size for the device. Na飗e users may take this	 * to be the only erase size available, or may use the more detailed	 * information below if they desire	 */	u_int32_t erasesize;	u_int32_t oobblock;  // Size of OOB blocks (e.g. 512)	u_int32_t oobsize;   // Amount of OOB data per block (e.g. 16)	u_int32_t ecctype;	u_int32_t eccsize;	// Kernel-only stuff starts here.	char *name;	int index;	/* Data for variable erase regions. If numeraseregions is zero,	 * it means that the whole device has erasesize as given above. 	 */	int numeraseregions;	struct mtd_erase_region_info *eraseregions; 	/* This really shouldn't be here. It can go away in 2.5 */	u_int32_t bank_size;	struct module *module;	int (*erase) (struct mtd_info *mtd, struct erase_info *instr);	/* This stuff for eXecute-In-Place */	int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf);	/* We probably shouldn't allow XIP if the unpoint isn't a NULL */	void (*unpoint) (struct mtd_info *mtd, u_char * addr);	int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);	int (*read_ecc) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf, u_char *eccbuf);	int (*write_ecc) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf, u_char *eccbuf);	int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);	/* 	 * Methods to access the protection register area, present in some 	 * flash devices. The user data is one time programmable but the	 * factory data is read only. 	 */	int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	int (*read_fact_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	/* This function is not yet implemented */	int (*write_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	/* Chip-supported device locking */	int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len);	int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len);	void *priv;};/* * VIVI Interfaces */#ifdef CONFIG_MTDint write_to_flash(loff_t ofs, size_t len, const u_char *buf, int flag);int mtd_dev_init(void);#else#define write_to_flash(a, b, c, d) (int)(1)#define mtd_dev_init() (int)(1)#endif/* * Debugging macro and defines */#define MTD_DEBUG_LEVEL0	(0)	/* Quiet   */#define MTD_DEBUG_LEVEL1	(1)	/* Audible */#define MTD_DEBUG_LEVEL2	(2)	/* Loud    */#define MTD_DEBUG_LEVEL3	(3)	/* Noisy   */#ifdef CONFIG_MTD_DEBUG#define DEBUG(n, args...)			\	if (n <=  CONFIG_MTD_DEBUG_VERBOSE) {	\		printk( ##args );	\	}#else /* CONFIG_MTD_DEBUG */#define DEBUG(n, args...)#endif /* CONFIG_MTD_DEBUG */#endif /* __VIVI_MTD_MTD_H__ */