/* $Id: mtd.h,v 1.33 2001/06/09 00:08:59 dwmw2 Exp $ */#ifndef __MTD_MTD_H__#define __MTD_MTD_H__#ifdef __KERNEL__#include <linux/config.h>#include <linux/version.h>#include <linux/types.h>#include <linux/mtd/compatmac.h>#include <linux/module.h>#include <linux/uio.h>#endif /* __KERNEL__ */struct erase_info_user {	u_int32_t start;	u_int32_t length;};struct mtd_oob_buf {	u_int32_t start;	u_int32_t length;	unsigned char *ptr;};#define MTD_CHAR_MAJOR 90#define MTD_BLOCK_MAJOR 31#define MAX_MTD_DEVICES 16#define MTD_ABSENT		0#define MTD_RAM			1#define MTD_ROM			2#define MTD_NORFLASH		3#define MTD_NANDFLASH		4#define MTD_PEROM		5#define MTD_OTHER		14#define MTD_UNKNOWN		15#define MTD_CLEAR_BITS		1       // Bits can be cleared (flash)#define MTD_SET_BITS		2       // Bits can be set#define MTD_ERASEABLE		4       // Has an erase function#define MTD_WRITEB_WRITEABLE	8       // Direct IO is possible#define MTD_VOLATILE		16      // Set for RAMs#define MTD_XIP			32	// eXecute-In-Place possible#define MTD_OOB			64	// Out-of-band data (NAND flash)#define MTD_ECC			128	// Device capable of automatic ECC// Some common devices / combinations of capabilities#define MTD_CAP_ROM		0#define MTD_CAP_RAM		(MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)#define MTD_CAP_NORFLASH        (MTD_CLEAR_BITS|MTD_ERASEABLE)#define MTD_CAP_NANDFLASH       (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)#define MTD_WRITEABLE		(MTD_CLEAR_BITS|MTD_SET_BITS)// Types of automatic ECC/Checksum available#define MTD_ECC_NONE		0 	// No automatic ECC available#define MTD_ECC_RS_DiskOnChip	1	// Automatic ECC on DiskOnChip#define MTD_ECC_SW		2	// SW ECC for Toshiba & Samsung devicesstruct mtd_info_user {	u_char type;	u_int32_t flags;	u_int32_t size;	 // Total size of the MTD	u_int32_t erasesize;	u_int32_t oobblock;  // Size of OOB blocks (e.g. 512)	u_int32_t oobsize;   // Amount of OOB data per block (e.g. 16)	u_int32_t ecctype;	u_int32_t eccsize;};struct region_info_user {	u_int32_t offset;		/* At which this region starts, 					 * from the beginning of the MTD */	u_int32_t erasesize;		/* For this region */	u_int32_t numblocks;		/* Number of blocks in this region */	u_int32_t regionindex;};#define MEMGETINFO              _IOR('M', 1, struct mtd_info_user)#define MEMERASE                _IOW('M', 2, struct erase_info_user)#define MEMWRITEOOB             _IOWR('M', 3, struct mtd_oob_buf)#define MEMREADOOB              _IOWR('M', 4, struct mtd_oob_buf)#define MEMLOCK                 _IOW('M', 5, struct erase_info_user)#define MEMUNLOCK               _IOW('M', 6, struct erase_info_user)#define MEMGETREGIONCOUNT	_IOR('M', 7, int)#define MEMGETREGIONINFO	_IOWR('M', 8, struct region_info_user)#ifndef __KERNEL__typedef struct mtd_info_user mtd_info_t;typedef struct erase_info_user erase_info_t;typedef struct region_info_user region_info_t;	/* User-space ioctl definitions */#else /* __KERNEL__ */#define MTD_ERASE_PENDING      	0x01#define MTD_ERASING		0x02#define MTD_ERASE_SUSPEND	0x04#define MTD_ERASE_DONE          0x08#define MTD_ERASE_FAILED        0x10struct erase_info {	struct mtd_info *mtd;	u_int32_t addr;	u_int32_t len;	u_long time;	u_long retries;	u_int dev;	u_int cell;	void (*callback) (struct erase_info *self);	u_long priv;	u_char state;	struct erase_info *next;};struct mtd_erase_region_info {	u_int32_t offset;			/* At which this region starts, from the beginning of the MTD */	u_int32_t erasesize;		/* For this region */	u_int32_t numblocks;		/* Number of blocks of erasesize in this region */};struct mtd_info {	u_char type;	u_int32_t flags;	u_int32_t size;	 // Total size of the MTD	/* "Major" erase size for the device. Na飗e users may take this	 * to be the only erase size available, or may use the more detailed	 * information below if they desire	 */	u_int32_t erasesize;	u_int32_t oobblock;  // Size of OOB blocks (e.g. 512)	u_int32_t oobsize;   // Amount of OOB data per block (e.g. 16)	u_int32_t ecctype;	u_int32_t eccsize;	// Kernel-only stuff starts here.	char *name;	int index;	/* Data for variable erase regions. If numeraseregions is zero,	 * it means that the whole device has erasesize as given above. 	 */	int numeraseregions;	struct mtd_erase_region_info *eraseregions; 	/* This really shouldn't be here. It can go away in 2.5 */	u_int32_t bank_size;	struct module *module;	int (*erase) (struct mtd_info *mtd, struct erase_info *instr);	/* This stuff for eXecute-In-Place */	int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf);	/* We probably shouldn't allow XIP if the unpoint isn't a NULL */	void (*unpoint) (struct mtd_info *mtd, u_char * addr);	int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);	int (*read_ecc) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf, u_char *eccbuf);	int (*write_ecc) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf, u_char *eccbuf);	int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);	int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);	/* iovec-based read/write methods. We need these especially for NAND flash,	   with its limited number of write cycles per erase.	   NB: The 'count' parameter is the number of _vectors_, each of 	   which contains an (ofs, len) tuple.	*/	int (*readv) (struct mtd_info *mtd, struct iovec *vecs, unsigned long count, loff_t from, size_t *retlen);	int (*writev) (struct mtd_info *mtd, const struct iovec *vecs, unsigned long count, loff_t to, size_t *retlen);	/* Sync */	void (*sync) (struct mtd_info *mtd);	/* Chip-supported device locking */	int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len);	int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len);	/* Power Management functions */	int (*suspend) (struct mtd_info *mtd);	void (*resume) (struct mtd_info *mtd);	void *priv;};	/* Kernel-side ioctl definitions */extern int add_mtd_device(struct mtd_info *mtd);extern int del_mtd_device (struct mtd_info *mtd);extern struct mtd_info *__get_mtd_device(struct mtd_info *mtd, int num);static inline struct mtd_info *get_mtd_device(struct mtd_info *mtd, int num){	struct mtd_info *ret;		ret = __get_mtd_device(mtd, num);	if (ret && ret->module && !try_inc_mod_count(ret->module))		return NULL;	return ret;}static inline void put_mtd_device(struct mtd_info *mtd){       if (mtd->module)	       __MOD_DEC_USE_COUNT(mtd->module);}struct mtd_notifier {	void (*add)(struct mtd_info *mtd);	void (*remove)(struct mtd_info *mtd);	struct mtd_notifier *next;};extern void register_mtd_user (struct mtd_notifier *new);extern int unregister_mtd_user (struct mtd_notifier *old);#ifndef MTDC#define MTD_ERASE(mtd, args...) (*(mtd->erase))(mtd, args)#define MTD_POINT(mtd, a,b,c,d) (*(mtd->point))(mtd, a,b,c, (u_char **)(d))#define MTD_UNPOINT(mtd, arg) (*(mtd->unpoint))(mtd, (u_char *)arg)#define MTD_READ(mtd, args...) (*(mtd->read))(mtd, args)#define MTD_WRITE(mtd, args...) (*(mtd->write))(mtd, args)#define MTD_READV(mtd, args...) (*(mtd->readv))(mtd, args)#define MTD_WRITEV(mtd, args...) (*(mtd->writev))(mtd, args)#define MTD_READECC(mtd, args...) (*(mtd->read_ecc))(mtd, args)#define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args)#define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args)#define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args)#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd);  } while (0) #endif /* MTDC *//* * Debugging macro and defines */#define MTD_DEBUG_LEVEL0	(0)	/* Quiet   */#define MTD_DEBUG_LEVEL1	(1)	/* Audible */#define MTD_DEBUG_LEVEL2	(2)	/* Loud    */#define MTD_DEBUG_LEVEL3	(3)	/* Noisy   */#ifdef CONFIG_MTD_DEBUG#define DEBUG(n, args...)			\	if (n <=  CONFIG_MTD_DEBUG_VERBOSE) {	\		printk(KERN_INFO args);	\	}#else /* CONFIG_MTD_DEBUG */#define DEBUG(n, args...)#endif /* CONFIG_MTD_DEBUG */#endif /* __KERNEL__ */#endif /* __MTD_MTD_H__ */