% Unified transistor model as defined in Rabaey, Chandrakasan and Nikolic

function id = mos(W, L, vgs, vds, vsb, technology)
% technology is a list of technology parameters
% [type vt0 gamma beta lambda vdsat ld wd]
% W and L are expressed in micron

% compute the effective vt
type = technology(1);
vt = threshold(vsb, type, technology(2), technology(3));

leff = L - technology(7);
weff = W - technology(8);
vsat = technology(6);
for i=1:length(vgs)
   vgt = vgs(i)-vt;
   if (vgt * type < 0)
      id(i,:) = zeros(1, length(vds));
   else
      for j=1:length(vds)
          if (type == 1)
              vde(j) = min([vgt vds(j) vsat]);
          else         
              vde(j) = max([vgt vds(j) vsat]);
          end
      end
      id(i,:) = (weff/leff) * technology(4) * (vgt * vde - vde.^2/2.0).*(1 + technology(5) * vds);
   end
end