#include "ss.h"
//寫入int型的數(shù)字,發(fā)現(xiàn)flash每次一存儲(chǔ)就是兩個(gè)字節(jié)
//輸入要寫入的數(shù)值和地址.地址格式是0x4000....
//對flash存儲(chǔ)器的擦除必須是一段一段的進(jìn)行.
//不可能一個(gè)字節(jié)一個(gè)字節(jié)的擦除
//主存儲(chǔ)器第n(0-119)段的地址(FE00H-n x 512)----(FFFFH-n x 512)
//取擦除地址從0x4400開始，即n=5D,到44FF.取寫數(shù)據(jù)的地址從0x4410開始，然后向下寫數(shù)據(jù)。
void write_para(void)
{
  
  unsigned int *Flash_ptr;                          // Flash pointer  
  Flash_ptr = (unsigned int *)0x4400;              // Initialize Flash pointer
  FCTL1 = FWKEY + ERASE;                    // Set Erase bit,FWKEY=A5,寫操作
  FCTL3 = FWKEY;                            // Clear Lock bit
  *Flash_ptr = 0;    
  //while(FCTL3&BUSY);        // Dummy write to erase Flash segment
  FCTL1 = FWKEY + WRT;                      // Set WRT bit for write operation 
  Flash_ptr = (unsigned int *)0x4410;
  *Flash_ptr =PV_bCyclesNum; 
   Flash_ptr = (unsigned int *)0x4412;
  *Flash_ptr =Main_bStatusFlag; 
   Flash_ptr = (unsigned int *)0x4414;
  *Flash_ptr =w_PAGEADDR; 
   Flash_ptr = (unsigned int *)0x4416;
  *Flash_ptr =w_BYTEADDR; 
  
  //while(FCTL3&BUSY);  // Write value to flash
  FCTL1 = FWKEY;                            // Clear WRT bit
  FCTL3 = FWKEY + LOCK; // Reset LOCK bit
  
}
//從某個(gè)地址addr取出取出一個(gè)char型的數(shù)字
unsigned int read_Segment(int addr)
{
  unsigned int value;
  unsigned int *Flash_ptr; 
  Flash_ptr = (unsigned int *)addr;
  value=*Flash_ptr;    
  return value;
}  

void read_para(void)
{
  
  PV_bCyclesNum=(read_Segment(0x4410)&0xFF);
  Main_bStatusFlag=(read_Segment(0x4412)&0xFF);
  w_PAGEADDR=read_Segment(0x4414);
  w_BYTEADDR=read_Segment(0x4416);
  
  
}
  //*******************************************