?? at45db081new.c
字號:
{
unsigned int i;
DF_RDY_BUSY; // check if flash is busy
DF_CHIP_SELECT; //緩沖區(qū)1為82H 緩沖區(qū)2為85H
SendSPIByte(PAGE_PROG_THROUGH_B2);
SendSPIByte((unsigned char)(AT450XXPageAddr >> 7));
SendSPIByte((unsigned char)(AT450XXPageAddr << 1 + start_addr>>8));
SendSPIByte((unsigned char)start_addr);
for (i=0;i<len;i++)
SendSPIByte(buffer[i]);
DF_CHIP_NOSELECT;
}
//寫緩存＋擦除＋緩存寫主存
void FlashAutoProgViaBuffer1(unsigned int start_addr, unsigned int len,unsigned char *buffer) //將指定數(shù)據(jù)通過緩存1寫入Flash指定位置(先擦除)
{
unsigned int i;
DF_RDY_BUSY; // check if flash is busy
DF_CHIP_SELECT; //緩沖區(qū)1為84H 緩沖區(qū)2為87H
SendSPIByte(AUTO_PAGE_REWRITE_THROUGH_B1);
SendSPIByte((unsigned char)(AT450XXPageAddr >> 7));
SendSPIByte((unsigned char)(AT450XXPageAddr << 1 + start_addr>>8));
SendSPIByte((unsigned char)start_addr);
for (i=0;i<len;i++)
SendSPIByte(buffer[i]);
DF_CHIP_NOSELECT;
}
//寫緩存＋擦除＋緩存寫主存
void FlashAutoProgViaBuffer2(unsigned int start_addr, unsigned int len,unsigned char *buffer) //將指定數(shù)據(jù)通過緩存2寫入Flash指定位置(先擦除)
{
unsigned int i;
DF_RDY_BUSY; // check if flash is busy
DF_CHIP_SELECT; //緩沖區(qū)1為84H 緩沖區(qū)2為87H
SendSPIByte(AUTO_PAGE_REWRITE_THROUGH_B2);
SendSPIByte((unsigned char)(AT450XXPageAddr >> 7));
SendSPIByte((unsigned char)(AT450XXPageAddr << 1 + start_addr>>8));
SendSPIByte((unsigned char)start_addr);
for (i=0;i<len;i++)
SendSPIByte(buffer[i]);
DF_CHIP_NOSELECT;
}
sfr16 DP = 0x82; // data pointer
sfr16 TMR3RL = 0x92; // Timer3 reload value
sfr16 TMR3 = 0x94; // Timer3 counter
sfr16 ADC0 = 0xbe; // ADC0 data
sfr16 ADC0GT = 0xc4; // ADC0 greater than window
sfr16 ADC0LT = 0xc6; // ADC0 less than window
sfr16 RCAP2 = 0xca; // Timer2 capture/reload
sfr16 T2 = 0xcc; // Timer2
sfr16 DAC0 = 0xd2; // DAC0 data
sfr16 DAC1 = 0xd5; // DAC1 data
unsigned int Count1msInc;
void SYSCLK_Init (void);
void PORT_Init (void);
void SPI0_Init (void);
void Timer0_Init (void);
void main (void) {
unsigned char xdata MyBuff[270];
unsigned char xdata MyBuff1[270];
unsigned char xdata *idata MyBuff11;
unsigned int i,j;
WDTCN = 0xde; // disable watchdog timer
WDTCN = 0xad;
SYSCLK_Init (); // initialize oscillator
Timer0_Init();
PORT_Init (); // initialize crossbar and GPIO
EA=1;
DF_RESET;
SPI0_Init (); // initialize SPI0
RAM_CHIP_SELECT_BANK0;
EMI0CF = 0x2F;
for(i=0;i<4096;i++)
{MyBuff[0]=i>>8;
MyBuff[1]=i; //將頁地址寫入數(shù)組的前兩個字節(jié).
for(j=2;j<264;j++)
{
MyBuff[j]=i;
} //向數(shù)組寫數(shù)據(jù)共262個字節(jié)
AT450XXPageAddr=i; //指定待寫頁
FlashBuffer1Write(0,264,MyBuff);//將數(shù)組的內(nèi)容寫入緩存1
FlashBuffer1ProgAutoErase(); //將緩存的內(nèi)容寫入主存(帶擦除)
}
_nop_();
for(i=0;i<32;i++)
{
for(j=0;j<128;j++)
{AT450XXPageAddr=i*128+j;//指定待讀頁
MyBuff11=0x100+j*128;//指定數(shù)據(jù)放置的XRAM的地址(首地址為0x100).
PageToBuffer2();//將主存內(nèi)容讀入緩存2
FlashBuffer2Read(0,264,MyBuff11); //將緩存2的內(nèi)容讀入XRAM
}
_nop_(); //在此設(shè)斷點觀察XRAM中的數(shù)據(jù)是否與寫入的數(shù)據(jù)相符.
}
_nop_(); //同時在此設(shè)一斷點在全部讀完主存后觀察XRAM中的內(nèi)容.
// i=1;
// if (i)
//{
// Count1msInc=0;
// ErasingDataFlash(); //整片擦除
// Count1msInc=0;
// for (i=0;i<2;i++)
// {
// AT450XXPageAddr=i;
// for (j=0;j<255;j++)
// {
// MyBuff[j]=j+i;
// }
// if (i%2)
// FlashBuffer1Write(255,9,MyBuff);
//FlashAutoProgViaBuffer1(0,264,MyBuff); //將指定數(shù)據(jù)通過緩存1寫入Flash指定位置(先擦除)
for(i=264;i>0;i--)
{
MyBuff[j]=i;
j++;
}
AT450XXPageAddr=5;
FlashBuffer1Write(0,200,MyBuff);
FlashBuffer1ProgAutoErase();
//FlashAutoProgViaBuffer1(0,264,MyBuff); //將指定數(shù)據(jù)通過緩存1寫入Flash指定位置(先擦除)
PageToBuffer2();
FlashBuffer2Read(0,200,MyBuff1);
AT450XXPageAddr=1;
//FlashBuffer1Write(0,200,MyBuff);
// FlashBuffer1ProgAutoErase();
//FlashAutoProgViaBuffer1(0,264,MyBuff); //將指定數(shù)據(jù)通過緩存1寫入Flash指定位置(先擦除)
PageToBuffer2();
FlashBuffer2Read(0,200,MyBuff1);
// FlashRead(0,200,MyBuff1);
// else
// FlashAutoProgViaBuffer2(0,264,MyBuff); //將指定數(shù)據(jù)通過緩存2寫入Flash指定位置(先擦除)
//}
/* for(i=0;i<520;i++)
{ if(i<260)
MyBuff[i]=0x00;
else
MyBuff[i]=0x01;
}*/
AT450XXPageAddr=0;
FlashBuffer1Write(20,14,"1234567890UUAA");
FlashBuffer1Read(0,260,MyBuff1);
FlashBuffer1Write(20,14,"3234567890UUAA");
FlashBuffer1Read(20,14,MyBuff); //在此處設(shè)置斷點,觀察MyBuff的內(nèi)容
FlashBuffer1ProgNoErase();
PageToBuffer2();
FlashBuffer2Read(20,14,MyBuff);
Count1msInc=0;
FlashBuffer2Read(100,14,MyBuff);
Count1msInc=0;
FlashBuffer1Write(20,14,"1234567890UUAA");
Count1msInc=0;
FlashBuffer1Read(100,14,MyBuff);
Count1msInc=0;
FlashBuffer1ProgNoErase();
Count1msInc=0;
PageToBuffer2();
Count1msInc=0;
FlashBuffer2Read(100,14,MyBuff);
FlashProgViaBuffer1(100,14,MyBuff);
//ErasingDataFlash();
// EraseFlashPage();
FlashBuffer1Read(1,1, MyBuff); //從緩沖區(qū)1的指定位置(0-263)中讀入指定字節(jié)
FlashBuffer2Read(1,1,MyBuff); //從緩沖區(qū)2的指定位置(0-263)中讀入指定字節(jié)
FlashBuffer1Write(1,1,"!");
FlashBuffer2Write(1,1,"1");
GetFlashStatus();
PageToBuffer1();
PageToBuffer2();
FlashBuffer1ProgNoErase();
FlashBuffer2ProgNoErase();
FlashBuffer1ProgAutoErase();
FlashBuffer2ProgAutoErase();
FlashProgViaBuffer1(1,1, MyBuff);
FlashProgViaBuffer2(1,1, MyBuff);
FlashAutoProgViaBuffer1(1,1, MyBuff);
FlashAutoProgViaBuffer2(1,1, MyBuff);
//}
xxx: goto xxx;
}
void SYSCLK_Init (void)
{
int i; // delay counter
OSCXCN = 0x67; // start external oscillator with
// 11.0592MHz crystal
for (i=0; i < 256; i++) ; // Wait for osc. to start up
while (!(OSCXCN & 0x80)) ; // Wait for crystal osc. to settle
OSCICN = 0x88; // select external oscillator as SYSCLK
// source and enable missing clock
}
void PORT_Init (void)
{
XBR0 = 0x07; // Enable SMBus, SPI0, and UART0
XBR1 = 0x00;
XBR2 = 0x44; // Enable crossbar and weak pull-ups
EMI0TC = 0x21;
P74OUT = 0x0F;
P0MDOUT = 0x15;
}
void SPI0_Init (void)
{
SPI0CFG = 0x07; // data sampled on 1st SCK rising edge
// 8-bit data words
SPI0CFG|=0xC0;//CKPOL =1;
SPI0CN = 0x03; // Master mode; SPI enabled; flags
// cleared
SPI0CKR = SYSCLK/2/2000000-1; // SPI clock <= 8MHz (limited by
// EEPROM spec.)
}
void Timer0_Init (void)
{
CKCON|=0x8;
TMOD|=0x1; //16Bit
TR0 = 0; // STOP Timer0
TH0 = (-SYSCLK/1000) >> 8; // set Timer0 to overflow in 1ms
TL0 = -SYSCLK/1000;
TR0 = 1; // START Timer0
IE|= 0x2;
}
void Timer0_ISR (void) interrupt 1 //1ms
{
TH0 = (-SYSCLK/1000) >> 8;
TL0 = -SYSCLK/1000;
Count1msInc++;
}
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