/*------------------------------------------------------------
 *                              CACTI 4.0
 *         Copyright 2005 Hewlett-Packard Development Corporation
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 *
 * Permission to use, copy, and modify this software and its documentation is
 * hereby granted only under the following terms and conditions.  Both the
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 * thereof, and both notices must appear in supporting documentation.
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 * hereby grant back to Hewlett-Packard Company and its affiliated companies ("HP")
 * a non-exclusive, unrestricted, royalty-free right and license under any changes, 
 * enhancements or extensions  made to the core functions of the software, including 
 * but not limited to those affording compatibility with other hardware or software
 * environments, but excluding applications which incorporate this software.
 * Users further agree to use their best efforts to return to HP any such changes,
 * enhancements or extensions that they make and inform HP of noteworthy uses of
 * this software.  Correspondence should be provided to HP at:
 *
 *                       Director of Intellectual Property Licensing
 *                       Office of Strategy and Technology
 *                       Hewlett-Packard Company
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 *
 * This software may be distributed (but not offered for sale or transferred
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 *
 * THE SOFTWARE IS PROVIDED "AS IS" AND HP DISCLAIMS ALL
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 *------------------------------------------------------------*/

#ifndef LEAKAGE_H
#define LEAKAGE_H
#endif

#include<stdlib.h>


/*===================================================================*/

/*
 * The following are things you probably wouldn't want to change.
 */



/* .18 technology */

/* Common for all the Technology */
#define Bk 1.38066E-23  /* Boltzman Constant */
#define Qparam 1.602E-19    /* FIXME     */
#define Eox       3.5E-11

#define No_of_Samples 10
#define Tox_Std 0
#define Tech_Std 0
#define Vdd_Std 0
#define Vthn_Std 0
#define Vthp_Std 0

double Tkelvin;
double process_tech;
double tech_length0;
double M0n ;      /* Zero Bias Mobility for N-Type */
double M0p  ;     /* Zero Bias Mobility for P-Type */
double Tox ;
double Cox ;      /* Gate Oxide Capacitance per unit area */
double Vnoff0  ;  /* Empirically Determined Model Parameter for N-Type */
                         /* FIX ME */
double Vpoff0  ;  /* Empirically Determined Model Parameter for P-Type */
double Nfix ;     /* In the equation Voff = Vnoff0 +Nfix*(Vth0-Vthn) */
double Pfix ;     /* In the equation Voff = Vpoff0 +Pfix*(Vth0-Vthp) */
double Vthn  ;    /* In the equation Voff = Vnoff0 +Nfix*(Vth0-Vthn) */
double Vthp  ;    /* In the equation Voff = Vpoff0 +Pfix*(Vth0-Vthp) */
double Vnthx  ;   /* In the Equation Vth = Vth0 +Vnthx*(T-300) */
double Vpthx ;    /* In the Equation Vth = Vth0 +Vpthx*(T-300) */
double Vdd_init ; /* Default Vdd. Can be Changed in leakage.c */
double Volt0  ;
double Na  ;      /* Empirical param for the Vdd fit */
double Nb ;       /* Empirical param for the Vdd fit */
double Pa  ;      /* Empirical param for the Vdd fit */
double Pb  ;      /* Empirical param for the Vdd fit */
double NEta  ;    /* Sub-threshold Swing Co-efficient N-Type */
double PEta   ;   /* Sub-threshold Swing Co-efficient P-Type */

double L_nmos_d  ;     /* Adjusting Factor for Length */
double Tox_nmos_e  ;   /* Adjusting Factor for Tox */
double L_pmos_d ;    /* Adjusting Factor for Length */
double Tox_pmos_e ;  /* Adjusting Factor for Tox */

/* gate Vss */
double Vth0_gate_vss ;
double aspect_gate_vss;

/*drowsy cache*/
double Vdd_low ;

/*RBB*/
double k1_body_n ;
double k1_body_p ;
double vfi ;

double VSB_NMOS ;
double VSB_PMOS ;
/* dual VT*/
double Vt_cell_nmos_high ;
double Vt_cell_pmos_high ;
double Vt_bit_nmos_low ;
double Vt_bit_pmos_low ;

/* Gate lekage for 70nm */
double  nmos_unit_leakage ;
double a_nmos_vdd ;
double b_nmos_t;
double c_nmos_tox;

double pmos_unit_leakage;
double a_pmos_vdd ;
double b_pmos_t ;
double c_pmos_tox ;


/* Precalculated Values for leakage */
double precalc_Vnthx, precalc_Vpthx;
double precalc_Vthermal,precalc_inv_nVthermal,precalc_inv_pVthermal;

double precalc_nparam2,precalc_pparam2;

double precalc_nparamf, precalc_pparamf;
double precalc_nparaml, precalc_pparaml;

int have_leakage_params;

/* Technology Length */

double nmos_ileakage(double aspect_ratio,double Volt,double Vth0,double Tkelvin,double tox0);

double pmos_ileakage(double aspect_ratio,double Volt,double Vth0,double Tkelvin,double tox0);

double nmos_ileakage_var(double aspect_ratio, double Volt, double Vth0, double Tkelvin, double tox0, double tech_length);

double pmos_ileakage_var(double aspect_ratio,double Volt, double Vth0,double Tkelvin,double tox0, double tech_length);

double box_mueller(double std_var, double value);

double simplified_cmos_leakage(double naspect_ratio,double paspect_ratio, double nVth0, double pVth0,
							   double *norm_nleak, double *norm_pleak);

double simplified_nmos_leakage(double naspect_ratio, double nVth0);
double simplified_pmos_leakage(double paspect_ratio, double pVth0);

void precalc_leakage_params(double Volt,double Tkelvin,double tox0, double tech_length);

void init_tech_params(double tech);

void init_tech_params_default_process();//v4.1