?? option.inc
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_ISR_STARTADDRESS EQU 0x33ffff00
top_of_stacks EQU _ISR_STARTADDRESS
;=====================================================================================
; Fin = 12MHz,
;
; MPLLout = (2m x Fin)/(p x 2**s), m=MDIV+8, p=PDIV, s=SDIV, Fin=10~30MHz
; (17,1,1)=300Mhz, (92,3,1)=400Mhz, (67,2,1)=450Mhz, (81,2,1)=534Mhz,
; (17,1,0)=600Mhz, (92,3,0)=800Mhz
;
; EPLLout = (m x Fin)/(p x 2**s), m=MDIV+8, p=PDIV+2, s=SDIV, Fin=10~100MHz
; (28,1,2)=36Mhz, (40,1,2)=48Mhz, (22,1,1)=60Mhz, (28,1,1)=72Mhz, (34,1,1)=84Mhz
; (40,1,1)=96Mhz
;=====================================================================================
Startup_MPLL EQU 400000000
Startup_Mdiv EQU 92
Startup_Pdiv EQU 3
Startup_Sdiv EQU 1
Startup_ARMCLKdiv EQU 0 ; 0 : ARMCLK = MPLL/1
; 8 : ARMCLK = MPLL/2
; 2 : ARMCLK = MPLL/3
; 9 : ARMCLK = MPLL/4
; 10 : ARMCLK = MPLL/6
; 11 : ARMCLK = MPLL/8
; 13 : ARMCLK = MPLL/12
; 15 : ARMCLK = MPLL/16
Startup_PREdiv EQU 0x3 ; 0x0 : PREDIV_CLK = ARMCLK
; 0x1 : PREDIV_CLK = ARMCLK/2
; 0x2 : PREDIV_CLK = ARMCLK/3
; 0x3 : PREDIV_CLK = ARMCLK/4
; PREdiv HCLKdiv
Startup_HCLKdiv EQU 0x0 ; 0x0 : HCLK = PREDIV_CLK
; 0x1 : HCLK = PREDIV_CLK/2
; 0x3 : HCLK = PREDIV_CLK/4
Startup_PCLKdiv EQU 1 ; 0 : PCLK = HCLK
; 1 : PCLK = HCLK/2
;======================================================================================
; MEM config [SDR, DDR]
;======================================================================================
GBLL mSDR ; 256Mbit x16 x2ea = 512Mbit mem size
IF :DEF: mSDR
;---------------------------------------
; BANKCFG register : DRAM configure
;---------------------------------------
RASBW0 EQU 2 ; RAS addr 00=11bit,01-12bit,10=13bit, 11=14bit
RASBW1 EQU 2 ; RAS addr 00=11bit,01-12bit,10=13bit, 11=14bit
CASBW0 EQU 1 ; CAS addr 00=8bit,01-9bit,10=10bit, 11=11bit
CASBW1 EQU 1 ; CAS addr 00=8bit,01-9bit,10=10bit, 11=11bit
ADDRCFG0 EQU 0 ; addre configure
; 00={BA,RAS,CAS}, 01={RAS,BA,CAS}
ADDRCFG1 EQU 0 ; addre configure
; 00={BA,RAS,CAS}, 01={RAS,BA,CAS}
MEMCFG EQU 1 ; Ext.Mem 00=SDR,01=MSDR,10=DDR, 11=MDDR
BW EQU 0 ; Bus width 00=32bit,01=16bit
;---------------------------------------
; BANKCON1 register : DRAM timing control
;---------------------------------------
BStop EQU 0 ; read burst stop control
WBUF EQU 1 ; write buffer control
AP EQU 0 ; auto precharge control
PWRDN EQU 0 ; power down mode
;---------------------------------------
; BANKCON2 register : DRAM timing control 100MHz
;---------------------------------------
;tRAS EQU 5 ; Row active time
;tRC EQU 7 ; Row cycle time
;CL EQU 3 ; CAS latency control
;tRCD EQU 2 ; RAS to CAS delay
;tRP EQU 2 ; Row pre-charge time
;---------------------------------------
; BANKCON2 register : DRAM timing control (133MHz)
;---------------------------------------
tRAS EQU 6 ; Row active time
tRC EQU 9 ; Row cycle time
CL EQU 3 ; CAS latency control
tRCD EQU 3 ; RAS to CAS delay
tRP EQU 3 ; Row pre-charge time
;---------------------------------------
; BANKCON3 register : MRS/EMRS register
;---------------------------------------
BA_EMRS EQU 2 ; BA : EMRS
DS EQU 0 ; Driver strength
PASR EQU 0 ; PASR
BA_MRS EQU 0 ; BA : MRS
TM EQU 0 ; Test Mode - mode register set
CL_MRS EQU 3 ; CAS Latency
;---------------------------------------
; REFRESH register : refresh register
;---------------------------------------
REFCYC EQU 1053 ; refresh cycle
; 100MHz=787, 133MHz=1053
ELIF :DEF: mDDR
;---------------------------------------
; BANKCFG register : DRAM configure
;---------------------------------------
RASBW0 EQU 2 ; RAS addr 00=11bit,01-12bit,10=13bit, 11=14bit
RASBW1 EQU 2 ; RAS addr 00=11bit,01-12bit,10=13bit, 11=14bit
CASBW0 EQU 2 ; CAS addr 00=8bit,01-9bit,10=10bit, 11=11bit
CASBW1 EQU 2 ; CAS addr 00=8bit,01-9bit,10=10bit, 11=11bit
ADDRCFG0 EQU 0 ; addre configure
; 00={BA,RAS,CAS}, 01={RAS,BA,CAS}
ADDRCFG1 EQU 0 ; addre configure
; 00={BA,RAS,CAS}, 01={RAS,BA,CAS}
MEMCFG EQU 3 ; Ext.Mem 00=SDR,01=MSDR,10=DDR, 11=MDDR
BW EQU 1 ; Bus width 00=32bit,01=16bit
;---------------------------------------
; BANKCON1 register : DRAM timing control
;---------------------------------------
BStop EQU 0 ; read burst stop control
WBUF EQU 1 ; write buffer control
AP EQU 0 ; auto precharge control
PWRDN EQU 0 ; power down mode
;---------------------------------------
; BANKCON2 register : DRAM timing control
;---------------------------------------
tRAS EQU 5 ; Row active time
tRC EQU 7 ; Row cycle time
CL EQU 3 ; CAS latency control
tRCD EQU 2 ; RAS to CAS delay
tRP EQU 2 ; Row pre-charge time
;---------------------------------------
; BANKCON3 register : MRS/EMRS register
;---------------------------------------
BA_EMRS EQU 2 ; BA : EMRS
DS EQU 0 ; Driver strength
PASR EQU 0 ; PASR
BA_MRS EQU 0 ; BA : MRS
TM EQU 0 ; Test Mode - mode register set
CL_MRS EQU 3 ; CAS Latency
;---------------------------------------
; REFRESH register : refresh register
;---------------------------------------
REFCYC EQU 787 ; refresh cycle
; 100MHz=787, 133MHz=1053
;---------------------------------------------------------------------------
ENDIF
;---------------------------------------
; nGCS0 = AMD Flash = Bank0 Controller Parameter setting
;---------------------------------------
IDCY0 EQU 0x0 ; Idle or turnaround cycles IDCY*HCLK
WSTRD0 EQU 0xe ; Read wait state = tacc
WSTWR0 EQU 0xe ; wrie wait state
WSTOEN0 EQU 0 ; output enable assertion delay from CS
WSTWEN0 EQU 0 ; write enable assertion delay
BlWriteEn EQU 1 ;bit21-SMBAA signal control:0-1at all times, 1 active for sync
AddrValidWriteEn EQU 1 ;bit20-SMADDRVALD during write:0-always high,1-active for write
BurstLenWrite EQU 0 ;bit1819-burst transfer length:0-4,1-8,3-continu(sync only)
SyncWriteDev EQU 0 ;bit17-0:async, 1:sync
BMWrite EQU 0 ;bit16-burt mode write : 0-non-burst, 1-burst
WrapRead EQU 0 ;bit14-0-disable, 1 enable
BlReadEn EQU 1 ;bit13-SMBAA signal :0-1 at all time, 1-active for sync read
AddrValidReadEn EQU 1 ;bit12-SMADDRVALID signal: 0-always HIGH, 1-active for async & sync read
BurstLenRead EQU 0 ;bit1011-burst transfer length:0-4,1-8,2-16,3-cont(sync only)
SyncReadDev EQU 0 ;bit9-sync access :0-async, 1-sync
BMRead EQU 0 ;bit8-burst mode red and async page mode
SMBLSPOL EQU 0 ;bit6-polarit of signal nSMBLS
MW EQU 1 ;bit45-memory width : 00-8bit,01-16bit,10-32bit
WP EQU 0 ;bit3-write protect
WaitEn EQU 0 ;bit2-external wait signal enable
WaitPol EQU 0 ;bit1-polarity of the external wait input for actiation
RBLE EQU 0 ;bit0-read byte lane enable
SMBCR0_0 EQU ((BMRead<<8)+(SMBLSPOL<<6)+(MW<<4)+(WP<<3)+(WaitEn<<2)+(WaitPol<<1)+RBLE)
SMBCR0_1 EQU ((WrapRead<<14)+(BlReadEn<<13)+(AddrValidReadEn<<12)+(BurstLenRead<<10)+(SyncReadDev<<9))
SMBCR0_2 EQU ((BlWriteEn<<21)+(AddrValidWriteEn<<20)+(BurstLenWrite<<18)+(SyncWriteDev<<17)+(BMWrite<<16))
WaitTourErr0 EQU 0 ; external wait timeout error flag
WSTBRD0 EQU 0x1f ; burst read wait state
MemClkRatio EQU 1 ; SMMEMCLK :0-HCLK,1-HCLK/2,2-HCLK/3
SMClockEn EQU 1 ; SMCLK enable 0-only active during mem access,1-always running
END
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