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字號:
* BF904 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF904 1 2 3 4
L10 1 10 L=0.12N
L20 2 20 L=0.12N
L30 3 30 L=0.12N
L40 4 40 L=0.12N
L11 10 11 L=1.20N
L21 20 21 L=1.20N
L31 30 31 L=1.20N
L41 40 41 L=1.20N
C13 10 30 C=0.085P
C14 10 40 C=0.085P
C21 10 20 C=0.017P
C23 20 30 C=0.085P
C24 20 40 C=0.005P
D11 11 41 ZENER
D22 11 31 ZENER
RSUB 10 12 R=10
MOS1A 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6
MOS2A 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6
MOS1B 71 41 11 12 GATE3 L=1.1E-6 W= 6E-6
MOS2B 41 31 71 12 GATE4 L=4.0E-6 W= 6E-6
.MODEL ZENER
+ D BV=10 CJO=0.6E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.5E-12 CBS=0.5E-12
.MODEL GATE3
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.MODEL GATE4
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.ENDS BF904
* BF904R SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143R
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF904R 1 2 3 4
L10 1 10 L=0.12N
L20 2 20 L=0.12N
L30 3 30 L=0.12N
L40 4 40 L=0.12N
L11 10 11 L=1.20N
L21 20 21 L=1.20N
L31 30 31 L=1.20N
L41 40 41 L=1.20N
C13 10 30 C=0.085P
C14 10 40 C=0.085P
C21 10 20 C=0.017P
C23 20 30 C=0.085P
C24 20 40 C=0.005P
D11 11 41 ZENER
D22 11 31 ZENER
RSUB 10 12 R=10
MOS1A 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6
MOS2A 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6
MOS1B 71 41 11 12 GATE3 L=1.1E-6 W= 6E-6
MOS2B 41 31 71 12 GATE4 L=4.0E-6 W= 6E-6
.MODEL ZENER
+ D BV=10 CJO=0.6E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.5E-12 CBS=0.5E-12
.MODEL GATE3
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.MODEL GATE4
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.ENDS BF904R
* BF904WR SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT343
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF904WR 1 2 3 4
L10 1 10 L=0.10N
L20 2 20 L=0.34N
L30 3 30 L=0.34N
L40 4 40 L=0.34N
L11 10 11 L=1.10N
L21 20 21 L=1.10N
L31 30 31 L=1.10N
L41 40 41 L=1.10N
C13 10 30 C=0.060P
C14 10 40 C=0.060P
C21 10 20 C=0.050P
C23 20 30 C=0.070P
C24 20 40 C=0.005P
D11 11 41 ZENER
D22 11 31 ZENER
RSUB 10 12 R=10
MOS1A 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6
MOS2A 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6
MOS1B 71 41 11 12 GATE3 L=1.1E-6 W= 6E-6
MOS2B 41 31 71 12 GATE4 L=4.0E-6 W= 6E-6
.MODEL ZENER
+ D BV=10 CJO=0.6E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.5E-12 CBS=0.5E-12
.MODEL GATE3
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.MODEL GATE4
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.ENDS BF904WR
* BF908WR SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT343
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF908WR 1 2 3 4
L10 1 10 L=0.10N
L20 2 20 L=0.34N
L30 3 30 L=0.34N
L40 4 40 L=0.34N
L11 10 11 L=1.10N
L21 20 21 L=1.10N
L31 30 31 L=1.10N
L41 40 41 L=1.10N
C13 10 30 C=0.060P
C14 10 40 C=0.060P
C21 10 20 C=0.050P
C23 20 30 C=0.070P
C24 20 40 C=0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 R=100
MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1750E-6
MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1750E-6
.MODEL ZENER
+ D BV=10 CJO=1.2E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.7E-12 CBS=0.5E-12
.ENDS BF908WR
* BF909 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF909 1 2 3 4
L10 1 10 L=0.12N
L20 2 20 L=0.12N
L30 3 30 L=0.12N
L40 4 40 L=0.12N
L11 10 11 L=1.20N
L21 20 21 L=1.20N
L31 30 31 L=1.20N
L41 40 41 L=1.20N
C13 10 30 C=0.085P
C14 10 40 C=0.085P
C21 10 20 C=0.017P
C23 20 30 C=0.085P
C24 20 40 C=0.005P
D11 11 41 ZENER
D22 11 31 ZENER
RS 10 12 R=10
MOS1A 61 41 11 12 GATE1 L=1.1E-6 W=1750E-6
MOS2A 21 31 61 12 GATE2 L=2.0E-6 W=1750E-6
MOS1B 71 41 11 12 GATE3 L=1.1E-6 W= 6E-6
MOS2B 41 31 71 12 GATE4 L=4.0E-6 W= 6E-6
.MODEL ZENER
+ D BV=10 CJO=0.6E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.5E-12 CBS=0.7E-12
.MODEL GATE3
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=140E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.MODEL GATE4
+ NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=100E3 RS=400 RD=400 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12
.ENDS BF909
* BF909R SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143R
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF909R 1 2 3 4
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