* Figure 33.62 CMOS: Mixed-Signal Circuit Design *

Vdd Vdd 0 DC 1.5 
Vinp Vinp 0 DC 0.75
Vinm Vinm 0 DC 0.75
.DC Vinp 0.6 0.9 .001 temp 0 100 25
.options scale=0.15u post

X1 Vbiasn Vbiasp Vdd betamult

*Set up source-followers for biasing
Mln1 Vdd Vinp Vg3 0 NMOS L=2 W=20
Mln2 Vg3 Vbiasn 0 0 NMOS L=2 W=20
Mrn1 Vdd Vinm Vg4 0 NMOS L=2 W=20
Mrn2 Vg4 Vbiasn 0 0 NMOS L=2 W=20
Mlp1 0 Vinp Vg1 Vdd PMOS L=2 W=40
Mlp2 Vg1 Vbiasp Vdd Vdd PMOS L=2 W=40
Mrp1 0 Vinm Vg2 Vdd PMOS L=2 W=40
Mrp2 Vg2 Vbiasp Vdd Vdd PMOS L=2 W=40

*Diff-amp MOSFETs
M1 Vot2 Vg1 Vs14 0 NMOS L=2 W=20
M2 Vot1 Vg2 Vs23 0 NMOS L=2 W=20
M3 Vob2 Vg3 Vs23 Vs23 PMOS L=2 W=40
M4 Vob1 Vg4 Vs14 Vs14 PMOS L=2 W=40
M5 Vob2 Vob2 0 0 NMOS L=2 W=20
M6 Vob1 Vob1 0 0 NMOS L=2 W=20
M7 Vot2 Vot2 Vdd1 Vdd PMOS L=2 W=40
M8 Vot1 Vot1 Vdd2 Vdd PMOS L=2 W=40

*dummy voltage sources
Vdd1 Vdd Vdd1 DC 0
Vdd2 Vdd Vdd2 DC 0 

*Add capacitors to inputs
Cin1 Vg1 Vg3 100f
Cin2 Vg2 Vg4 100f

.subckt betamult Vbiasn Vbiasp Vdd
M1 Vbiasn Vbiasn 0 0 NMOS L=2 W=20
M2 Vbiasp Vbiasn Vr 0 NMOS L=1 W=80
M3 Vbiasn Vbiasp Vdd Vdd PMOS L=2 W=40
M4 Vbiasp Vbiasp Vdd Vdd PMOS L=2 W=40
R1 Vr Vi 10k TC1=0.0024
Vi Vi 0 DC 0
M5 Vsu Vsu Vdd Vdd PMOS L=20 W=10
M6 Vsu Vsu 0 0 NMOS L=5 W=10
M7 Vdd Vsu Vbiasn 0 NMOS L=1 W=10
.ends

*** SPICE Models

*** Models created by Daniel Foty.
*** (c) 2001, Gilgamesh Associates and EPFL - All rights reserved.
*** These models are provided without warranty or support.
*** These models represent a completely fictitious 0.15um process, and do
***   NOT correspond to any real silicon process.  They are provided expressly for
***   use in the examples provided in this text, and should not be used for any 
***   real silicon product design.

*** NMOS EKV MOSFET Model ***************************************************
*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE, 
*** Level=EKV in Spectre
*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7)
*---------------
.MODEL nmos nmos
+ LEVEL=55

*** Setup Parameters
+ UPDATE=2.6

*** Process Related Model Parameters
+ COX=9.083E-3 XJ=0.15E-6

*** Intrinsic Model Parameters
+ VTO=0.4 GAMMA=0.71 PHI=0.97 KP=453E-6
+ E0=88.0E6 UCRIT=4.0E6 
+ DL=-0.05E-6 DW=-0.02E-6
+ LAMBDA = 0.30 LETA=0.28 WETA=0
+ Q0=280E-6 LK=0.5E-6

*** Substrate Current Parameters
+ IBN=1.0 IBA=200E6 IBB=350E6

*** Intrinsic Model Temperature Parameters
+ TNOM=27.0 TCV=1.5E-3 BEX=-1.5 UCEX=1.7 IBBT=0

*** 1/f Noise Model Parameters
+ KF=1E-27 AF=1

*** Series Resistance and Area Calulation Parameters
+ HDIF=0.24e-6 ACM=3 RSH=5.0 RS=1250.526
+ RD=1250.526 LDIF=0.07e-6

*** Junction Current Parameters
+ JS=1.0E-6 JSW=5.0E-11 XTI=0 N=1.5

*** Junction Capacitances Parameters
+ CJ=1.0E-3 CJSW=2.0E-10 CJGATE=5.0E-10
+ MJ=0.5 MJSW=0.3 PB=0.9 PBSW=0.9 FC=0.5

*** Gate Overlap Capacitances
+ CGSO=3.0E-10 CGDO=3.0E-10 CGBO=3.0E-11

*** PMOS EKV MOSFET Model ***************************************************
*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE, 
*** Level=EKV in Spectre
*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7)
*---------------
.MODEL pmos pmos
+ LEVEL  = 55

*** Setup Parameters
+ UPDATE = 2.6

*** Process Related Model Parameters
+ COX=9.083E-3 XJ=0.15E-6

*** Intrinsic Model Parameters
+ VTO=-0.4 GAMMA=0.69 PHI=0.87 KP=92.15E-6
+ E0=51.0E6 UCRIT=18.0E6
+ DL=-0.05E-6 DW=-0.03E-6
+ LAMBDA=1.1 LETA=0.45 WETA=0
+ Q0=200E-6 LK=0.6E-6

*** Substrate Current Parameters 
+ IBN=1.0 IBA=0.0 IBB=300E6 

*** Intrinsic Model Temperature Parameters 
+ TNOM=25.0 TCV=-1.4E-3 BEX=-1.4 UCEX=2.0 IBBT=0.0 

*** 1/f Noise Model Parameters 
+ KF=1.0E-28 AF=1 

*** Series Resistance and Area Calulation Parameters   
+ HDIF=0.24E-6 ACM=3 RSH=5.0 RS=3145.263
+ RD=3145.263 LDIF=0.07e-6

*** Junction Current Parameters   
+ JS=1.0E-7 JSW=5.0E-12 XTI=0 N=1.8 

*** Junction Capacitances Parameters 
+ CJ=1.3E-3 CJSW=2.5E-10 CJGATE=5.5E-10 
+ MJ=0.5 MJSW=0.35 PB=0.9 PBSW=0.9 FC=0.5 

*** Gate Overlap Capacitances 
+ CGSO=3.2E-10 CGDO=3.2E-10 CGBO=3.0E-11

.end