Gallium Arsenide Resistor* This transient simulation demonstrates the effects of velocity overshoot* and velocity saturation at high lateral electric fields.* Do not try to do DC analysis of this resistor. It will not converge* because of the peculiar characteristics of the GaAs velocity-field* relation.  In some cases, problems can arise in transient simulation* as well.VPP 1 0 1v PWL 0s 0.0v 10s 1vVNN 2 0 0.0v D1 1 2 M_RES AREA=1.MODEL M_RES numd level=1+ options resistor defa=1p+ x.mesh loc=0.0 num=1+ x.mesh loc=1.0 num=101+ domain   num=1 material=1+ material num=1 gaas+ doping unif n.type conc=2.5e16+ models fieldmob srh auger conctau+ method ac=direct*.OP*.DC VPP 0.0v 10.01v 0.1v.TRAN 1s 10.001s 0s 0.1s.PRINT I(VPP).OPTION ACCT BYPASS=1.END