.module ReadWriteEEPROM.c
	.area text
	.dbfile E:\grc\licc\例子10.3.3\ReadWriteEEPROM.c
	.dbfunc s main _main fI
;           temp -> R20
;              i -> R20
	.even
_main::
	.dbline 7{
; // These work for devices with more than 256 bytes of EEPROM
; //int EEPROMwrite( int location, unsigned char);
; //unsigned char EEPROMread( int);
; #include <io8515.h>
; #include <eeprom.h>
; void main(void)
; {
	.dbline 8
;   unsigned char temp =0xaa,i;
	ldi R20,170
	.dbline 9
;     EEPROMwrite(0x20,temp); /* 寫(xiě)E2PROM 地址0x20  */
	mov R18,R20
	ldi R16,32
	ldi R17,0
	rcall _EEPROMwrite
	.dbline 10
;     i=EEPROMread(0x20);     /* 讀E2PROM 地址 0x20 */
	ldi R16,32
	ldi R17,0
	rcall _EEPROMread
	mov R20,R16
	.dbline 11
; 	 i++;
	inc R20
	.dbline 12
; 	EEPROMwrite(0x30,i);
	mov R18,R20
	ldi R16,48
	ldi R17,0
	rcall _EEPROMwrite
	.dbline 13}
; }     
L1:
	ret
	.dbsym r temp 20 c
	.dbsym r i 20 c