* ---< SPICE Library APT.LIB Created by SPICEMOD 2.4.6 05/00 >------
* ------< SPICE Library 10045LLL.LIB Added by SPICEMOD 2.4.6  12/02 >------
* ------< SPICE Library 10045JVFR.LIB Added by SPICEMOD 2.4.6  12/02 >------
**********
*SRC=10026JN;10026JN;MOSFETs N;Power >100V;APT 1000V 33A 0.26ohm isotop
*SYM=POWMOSN
.SUBCKT 10026JN 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.118
RS 40 3 7.25M
RG 20 2 .55
CGS 2 3 11.2N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.33N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=13u VTO=3.15 KP=17.6)
.MODEL DCGD D (CJO=5.33N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=137N N=1.5 RS=28.8M BV=1K CJO=4N VJ=0.8 M=0.42 TT=1.25U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=8018JN;8018JN;MOSFETs N;Power >100V;APT 800V 40A 0.18ohm isotop
*SYM=POWMOSN
.SUBCKT 8018JN 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 79.8M
RS 40 3 5.25M
RG 20 2 .5
CGS 2 3 11.3N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.9N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=39u VTO=3.15 KP=56)
.MODEL DCGD D (CJO=5.9N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=166N N=1.5 RS=23.8M BV=800 CJO=4.17N VJ=0.8 M=0.42 TT=945N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=8030JN;8030JN;MOSFETs N;Power >100V;APT 800V 27A 0.3ohm isotop
*SYM=POWMOSN
.SUBCKT 8030JN 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.137
RS 40 3 8.25M
RG 20 2 .5
CGS 2 3 5.54N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.08N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=19U VTO=3.15 KP=40)
.MODEL DCGD D (CJO=3.08N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=112N N=1.5 RS=35.2M BV=800 CJO=2.09N VJ=0.8 M=0.42 TT=1.01U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10045LLL;10045LLL;MOSFETs N;Power >100V;APT 1000V 23A 0.45ohm TO-264
*SYM=POWMOSN
.SUBCKT 10045LLL 10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  0.213
RS  40  3  12.2M
RG  20  2  6.52
CGS  2  3  4.23N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.54N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=652U VTO=4 KP=44.4)
.MODEL DCGD D (CJO=1.54N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=95.5N N=1.5 RS=23.9M BV=1K CJO=2.56N VJ=0.8 M=0.42 TT=560N)
.MODEL DLIM D (IS=100U)
.ENDS 
**********
*SRC=10050JN;10050JN;MOSFETs N;Power >100V;APT 1000V 13A 0.5ohm IsoTop
*SYM=POWMOSN
.SUBCKT 10050JN 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.236
RS 40 3 13.5M
RG 20 2 .25
CGS 2 3 5.19N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.95N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=17u VTO=3.15 KP=55)
.MODEL DCGD D (CJO=2.95N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=54N N=1.5 RS=76.9M BV=1K CJO=2.06N VJ=0.8 M=0.42 TT=1.28U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10050JVFR;10050JVFR;MOSFETs N;Power >100V;APT 1000V 19A 0.5ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 10050JVFR 10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  0.236
RS  40  3  13.5M
RG  20  2  7.89
CGS  2  3  6.31N
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  3.72N
R1  13  0  1
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=789U VTO=3 KP=16.6)
.MODEL DCGD D (CJO=3.72N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=78.9N N=1.5 RS=28.9M BV=1K CJO=1.31N VJ=0.8 M=0.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS 
**********
*SRC=ARF446;ARF446;MOSFETs N;Power >100V;APT 1000V 8A 1.5ohm TO247-rf
*SYM=POWMOSN
.SUBCKT ARF446 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.712
RS 40 3 38.5M
RG 20 2 .2
CGS 2 3 1.47N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.85N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=85.3u VTO=3.8 KP=6.06)
.MODEL DCGD D (CJO=1.85N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=31.1N N=1.5 RS=0.113 BV=1K CJO=519P VJ=0.8 M=0.42 TT=258N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF448;ARF448;MOSFETs N;Power >100V;APT 500V 15A 0.4ohm TO247-rf
*SYM=POWMOSN
.SUBCKT ARF448 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.189
RS 40 3 11M
RG 20 2 .2
CGS 2 3 1.33N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.78N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=47.4M ETA=152U VTO=3.8 KP=10.5)
.MODEL DCGD D (CJO=2.78N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=62.3N N=1.5 RS=40M BV=500 CJO=767P VJ=0.8 M=0.42 TT=318N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF449;ARF449;MOSFETs N;Power >100V;APT 500V 9A 0.72ohm TO247-rf
*SYM=POWMOSN
.SUBCKT ARF449 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.341
RS 40 3 19M
RG 20 2 .3
CGS 2 3 955P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.07N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=47.4m ETA=71U VTO=3.8 KP=6.28)
.MODEL DCGD D (CJO=1.07N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=37.4N N=1.5 RS=66.7M BV=500 CJO=560P VJ=0.8 M=0.42 TT=273N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=15D60K;15D60K;Diode;Si;APT 600V 15A 0.08us Fred
.MODEL APT15D60K D (IS=35.4N RS=17.7M N=1.7 BV=600 IBV=150U
+ CJO=146P VJ=0.75 M=0.333 TT=115N)
**********
*SRC=60D60LCT;60D60LCT;Diode;Si;APT 600V 60A 0.07us Fred
.MODEL 60D60LCT D (IS=599N RS=6.68M N=1.7 BV=600 IBV=500U
+ CJO=1.13N VJ=0.75 M=0.333 TT=101N)
**********
*SRC=60D60B;60D60B;Diode;Si;APT 600V 60A 0.07us Fred
.MODEL 60D60B D (IS=537U RS=6.12M N=2.79 BV=600 IBV=500U
+ CJO=1.13N VJ=0.75 M=0.333 TT=101N)
**********
*SRC=5010LVR;5010LVR;MOSFETs N;Power >100V;APT 500V 47A 0.1ohm TO-264
*SYM=POWMOSN
.SUBCKT 5010LVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 85M
RS 40 3 5.5M
RG 20 2 .19
CGS 2 3 7.23N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.51N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=56.2M ETA=36u VTO=3.2 KP=59.3)
.MODEL DCGD D (CJO=5.51N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=195N N=1.5 RS=10.6M BV=500 CJO=2.46N VJ=0.8 M=0.42 TT=620N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=11GF120KR;11GF120KR;IGBTs;No Diode;APT 1200V 22A 22.5NS TO-220
*SYM=IGBT
.SUBCKT 11GF120KR 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DDS 83 81 DO
DBE 85 81 DE
RC 85 71 43.5M
RE 83 74 4.35M
RG 72 82 6.82
CGE 82 83 562P
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 7.69N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 19 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=14.1F NF=1.2 BF=5.1 CJE=8.07N
+ TF=22.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=43.6M ETA=1M VTO=5.5 KP=3.43)
.MODEL DR D (IS=1.41F CJO=550P VJ=1 M=0.82)
.MODEL DO D (IS=1.41F BV=1.2K CJO=372P VJ=1 M=0.7)
.MODEL DE D (IS=1.41F BV=20 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=5017BFLC;5017BFLC;MOSFETs N;Power >100V;APT 500V 30A 0.17ohm TO-247
*SYM=POWMOSN
.SUBCKT 5017BFLC 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 79.8M
RS 40 3 5.25M
RG 20 2 .25
CGS 2 3 2.88N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.48N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 5N
.MODEL DMOS NMOS (LEVEL=1 lambda=15M VTO=4.9 KP=7)
.MODEL DCGD D (CJO=1.48N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=125N N=1.5 RS=20M BV=500 CJO=2N VJ=0.8 M=0.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5017BFLCx;5017BFLCx;MOSFETs N;Power >100V;APT 500V 30A 0.17ohm TO-247
*SYM=POWMOSN
.SUBCKT 5017BFLCx 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 150M
RS 40 3 7.25M
RG 20 2 .2
CGS 2 3 2.88N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.48N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=51M ETA=25U VTO=4.85 KP=59.2)
.MODEL DCGD D (CJO=1.48N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=125N N=1.5 RS=20M BV=500 CJO=2N VJ=0.8 M=0.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=12080LVR;12080LVR;MOSFETs N;Power >100V;APT 1200V 16A 0.8ohm TO-264
*SYM=POWMOSN
.SUBCKT 12080LVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.379
RS 40 3 21M
RG 20 2 .3
CGS 2 3 6.25N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.21N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=93.8M VTO=3.5 KP=54.7)
.MODEL DCGD D (CJO=3.21N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=66.4N N=1.5 RS=34.4M BV=1.2K CJO=1.2N VJ=0.8 M=0.42 TT=1.08U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=12040JVR;12040JVR;MOSFETs N;Power >100V;APT 1200V 26A 0.4ohm TO-264
*SYM=POWMOSN
.SUBCKT 12040JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.189
RS 40 3 11M
RG 20 2 .3
CGS 2 3 14.4N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8.22N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=76.9M VTO=3.5 KP=62.2)
.MODEL DCGD D (CJO=8.22N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=108N N=1.5 RS=21.2M BV=1.2K CJO=2.67N VJ=0.8 M=0.42 TT=1.4U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10050LVR;10050LVR;MOSFETs N;Power >100V;APT 1000V 21A 0.5ohm TO-264
*SYM=POWMOSN
.SUBCKT 10050LVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.236
RS 40 3 13.5M
RG 20 2 .25
CGS 2 3 6.51N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.16N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=0.112 VTO=3.5 KP=72.6)
.MODEL DCGD D (CJO=1.16N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=87.2N N=1.5 RS=26.2M BV=1K CJO=2.17N VJ=0.8 M=0.42 TT=960N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10050JVR;10050JVR;MOSFETs N;Power >100V;APT 1000V 19A 0.5ohm Isotop
*SYM=POWMOSN
.SUBCKT 10050JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.236
RS 40 3 13.5M
RG 20 2 .2
CGS 2 3 6.51N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.16N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=0.111 VTO=3.5 KP=80.2)
.MODEL DCGD D (CJO=1.16N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=78.9N N=1.5 RS=28.9M BV=1K CJO=2.17N VJ=0.8 M=0.42 TT=960N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=60GT60JR;60GT60JR;IGBTs;No Diode;APT 600V 90A 30NS ISOTOP
*SYM=IGBT
.SUBCKT 60GT60JR 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DDS 83 81 DO
DBE 85 81 DE
RC 85 71 16.9M
RE 83 74 1.69M
RG 72 82 1.67
CGE 82 83 3.02N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 36.4N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 19 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=1.06P NF=1.2 BF=5.1 CJE=38.2N
+ TF=30N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=57.1M ETA=0.2 VTO=4.2 KP=4.99)
.MODEL DR D (IS=106F CJO=2.6N VJ=1 M=0.82)
.MODEL DO D (IS=106F BV=599 CJO=1.76N VJ=1 M=0.7)
.MODEL DE D (IS=106F BV=15 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=5010LCX;5010LCX;MOSFETs N;Power >100V;test 500V 47A 0.1ohm
*SYM=POWMOSN
.SUBCKT 5010LCX 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 85M
RS 40 3 4M
RG 20 2 .19
CGS 2 3 4.93N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.44N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=45M ETA=25U VTO=4 KP=85)
.MODEL DCGD D (CJO=2.44N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=195N N=1.5 RS=11.7M BV=500 CJO=3.61N VJ=0.8 M=0.42 TT=570N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=60GT60BX;60GT60BX;IGBTs;No Diode;test 600V 60A 35NS
*SYM=IGBT
.SUBCKT 60GT60BX 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DDS 83 81 DO
DBE 85 81 DE
RC 85 71 7.11M
RE 83 74 711U
RG 72 82 2.5
CGE 82 83 3.02N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 36.4N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 19 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=45.5P NF=1.2 BF=5.1 CJE=38.2N
+ TF=35N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=43.6M ETA=200U VTO=5.5 KP=3.23)
.MODEL DR D (IS=4.55P CJO=2.6N VJ=1 M=0.82)
.MODEL DO D (IS=4.55P BV=599 CJO=1.76N VJ=1 M=0.7)
.MODEL DE D (IS=4.55P BV=40 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=APL501J;APL501J;MOSFETs N;Power >100V;APT 500V 43A 0.12ohm Isotop
*SYM=POWMOSN
.SUBCKT APL501J 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 56M
RS 40 3 4M
RG 20 2 .29
CGS 2 3 5.65N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6.42N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=52.9M ETA=581U VTO=3.4 KP=5.71)
.MODEL DCGD D (CJO=6.42N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=178N N=1.5 RS=14M BV=500 CJO=3.01N VJ=0.8 M=0.42 TT=700N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=APL1001J;APL1001J;MOSFETs N;Power >100V;APT 1000V 18A 0.6ohm Isotop
*SYM=POWMOSN
.SUBCKT APL1001J 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.284
RS 40 3 16M
RG 20 2 .33
CGS 2 3 5.87N
EGD 12 0 2 1 1