* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 1.9
RS 40 3 0.101
RG 20 2 45.5
CGS 2 3 768P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 475P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3.1 KP=7.7)
.MODEL DCGD D (CJO=475P VJ=0.6 M=0.68)
.MODEL DSUB D (IS=13.7N N=1.5 RS=0.167 BV=1K CJO=335P VJ=0.8 M=0.42 TT=290N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=20GF120xR;20GF120xR;IGBTs;No Diode;APT 1200V 32A 42.5NS TO-247
*SYM=IGBT
.SUBCKT 20GF120xR 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DDS 83 81 DO
DBE 85 81 DE
RC 85 71 44.9M
RE 83 74 4.49M
RG 72 82 4.69
CGE 82 83 1.03N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 8.86N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 7.75
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 2 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=1.04E-16 NF=1.2 BF=4 CJE=9.54N
+ TF=42.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=43.6M ETA=500U VTO=5.5 KP=2.18)
.MODEL DR D (IS=1.04E-17 CJO=1.01N VJ=1 M=0.82)
.MODEL DO D (IS=1.04E-17 BV=1.2K CJO=685P VJ=1 M=0.7)
.MODEL DE D (IS=1.04E-17 BV=15 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=50M80LVR;50M80LVR;MOSFETs N;Power >100V;APT 500V 58A 0.08ohm TMAX
*SYM=POWMOSN
.SUBCKT 50M80LVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 37M
RS 40 3 3M
RG 20 2 2.59
CGS 2 3 8.19N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.65N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=276U VTO=3.1 KP=101)
.MODEL DCGD D (CJO=5.65N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=241N N=1.5 RS=9.48M BV=500 CJO=3.1N VJ=0.8 M=0.42 TT=680N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5020BVR;5020BVR;MOSFETs N;Power >100V;APT 500V 26A 0.2ohm TO-247
*SYM=POWMOSN
.SUBCKT 5020BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 94M
RS 40 3 6M
RG 20 2 5.77
CGS 2 3 3.5N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.57N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=577U VTO=3.1 KP=37.6)
.MODEL DCGD D (CJO=2.57N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=108N N=1.5 RS=21.2M BV=500 CJO=1.33N VJ=0.8 M=0.42 TT=510N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=4020BVR;4020BVR;MOSFETs N;Power >100V;APT 400V 23A 0.2ohm TO-247
*SYM=POWMOSN
.SUBCKT 4020BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 94M
RS 40 3 6M
RG 20 2 6.52
CGS 2 3 2.47N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.31N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=833K THETA=58.1M ETA=1.09M VTO=3.1 KP=18.6)
.MODEL DCGD D (CJO=2.31N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=95.5N N=1.5 RS=23.9M BV=400 CJO=946P VJ=0.8 M=0.42 TT=360N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5028BVR;5028BVR;MOSFETs N;Power >100V;APT 500V 20A 0.28ohm TO-247
*SYM=POWMOSN
.SUBCKT 5028BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.132
RS 40 3 8M
RG 20 2 7.5
CGS 2 3 2.5N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.93N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=1.25M VTO=3.1 KP=24.1)
.MODEL DCGD D (CJO=1.93N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=83N N=1.5 RS=30M BV=500 CJO=903P VJ=0.8 M=0.42 TT=410N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=6045BVR;6045BVR;MOSFETs N;Power >100V;APT 600V 15A 0.45ohm TO-247
*SYM=POWMOSN
.SUBCKT 6045BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.213
RS 40 3 12.2M
RG 20 2 10
CGS 2 3 2.48N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.6N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=1.67M VTO=3.1 KP=15.8)
.MODEL DCGD D (CJO=1.6N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=62.3N N=1.5 RS=36.7M BV=600 CJO=774P VJ=0.8 M=0.42 TT=400N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=8075BVR;8075BVR;MOSFETs N;Power >100V;APT 800V 12A 0.75ohm TO-247
*SYM=POWMOSN
.SUBCKT 8075BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.355
RS 40 3 19.8M
RG 20 2 12.5
CGS 2 3 2.46N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.73N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2.08M VTO=3.1 KP=13.9)
.MODEL DCGD D (CJO=1.73N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=49.8N N=1.5 RS=45.8M BV=800 CJO=581P VJ=0.8 M=0.42 TT=600N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF440/1;ARF440/1;MOSFETs N;Power >100V;APT 400V 11A 0.65ohm TO-247 CS
*SYM=POWMOSN
.SUBCKT ARF440/1 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.308
RS 40 3 17.2M
RG 20 2 22.9
CGS 2 3 700P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.12N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=833K THETA=58.1M ETA=3.18M VTO=3.1 KP=4)
.MODEL DCGD D (CJO=1.12N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=45.7N N=1.5 RS=50M BV=400 CJO=572P VJ=0.8 M=0.42 TT=289N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF442/3;ARF442/3;MOSFETs N;Power >100V;APT 500V 8A 0.85ohm TO-247 CS
*SYM=POWMOSN
.SUBCKT ARF442/3 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.403
RS 40 3 22.2M
RG 20 2 24.1
CGS 2 3 697P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.07N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=5M VTO=3.1 KP=4.37)
.MODEL DCGD D (CJO=1.07N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=33.2N N=1.5 RS=75M BV=500 CJO=511P VJ=0.8 M=0.42 TT=325N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF450;ARF450;MOSFETs N;Power >100V;APT 500V 11A 0.9ohm (one half)
*SYM=POWMOSN
.SUBCKT ARF450 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.426
RS 40 3 23.5M
LG 20 19 4N
RG 19 2 13.6
CGS 2 3 955P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.07N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=47.4M ETA=5.09M VTO=3.8 KP=4.45)
.MODEL DCGD D (CJO=1.07N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=45.7N N=1.5 RS=54.5M BV=500 CJO=560P VJ=0.8 M=0.42 TT=400N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10090BLLSLL;10090BLLSLL;MOSFETs N;Power >100V;APT 1000V 12A 0.9ohm D3PAK
*SYM=POWMOSN
.SUBCKT 10090BLLSLL 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.426
RS 40 3 23.5M
RG 20 2 12.5
CGS 2 3 1.97N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 860P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=1.33M VTO=4 KP=10.5)
.MODEL DCGD D (CJO=860P VJ=0.6 M=0.68)
.MODEL DSUB D (IS=49.8N N=1.5 RS=45.8M BV=1K CJO=1.17N VJ=0.8 M=0.42 TT=700N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5018BLLSLL;5018BLLSLL;MOSFETs N;Power >100V;APT 500V 27A 0.18ohm D3PAK
*SYM=POWMOSN
.SUBCKT 5018BLLSLL 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 84.5M
RS 40 3 5.5M
RG 20 2 5.56
CGS 2 3 2.48N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 462P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=45M ETA=593U VTO=4 KP=12.1)
.MODEL DCGD D (CJO=462P VJ=0.6 M=0.68)
.MODEL DSUB D (IS=112N N=1.5 RS=20.4M BV=500 CJO=2.04N VJ=0.8 M=0.42 TT=415N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=6025BVFR;6025BVFR;MOSFETs N;Power >100V;APT 600V 25A 0.25ohm TO-247
*SYM=POWMOSN
.SUBCKT 6025BVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.118
RS 40 3 7.25M
RG 20 2 6
CGS 2 3 4.08N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.82N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=600U VTO=3.1 KP=29.9)
.MODEL DCGD D (CJO=2.82N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=104N N=1.5 RS=22M BV=600 CJO=1.31N VJ=0.8 M=0.42 TT=205N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=6025BVR;6025BVR;MOSFETs N;Power >100V;APT 600V 25A 0.25ohm TO-247
*SYM=POWMOSN
.SUBCKT 6025BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.118
RS 40 3 7.25M
RG 20 2 6
CGS 2 3 4.08N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.82N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=600U VTO=3.1 KP=29.9)
.MODEL DCGD D (CJO=2.82N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=104N N=1.5 RS=22M BV=600 CJO=1.31N VJ=0.8 M=0.42 TT=580N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=40GT60BR;40GT60BR;IGBTs;No Diode;APT 600V 80A 47.5NS TO-247
*SYM=IGBT
.SUBCKT 40GT60BR 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DDS 83 81 DO
DBE 85 81 DE
RC 85 71 17.3M
RE 83 74 1.73M
RG 72 82 3.42
CGE 82 83 2.07N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 3.76N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 1
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 1 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=87.5F NF=1.2 BF=5.1 CJE=5.03N
+ TF=47.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=60M ETA=312U VTO=4 KP=6.08)
.MODEL DR D (IS=8.75F CJO=1.88N VJ=1 M=0.82)
.MODEL DO D (IS=8.75F BV=599 CJO=1.27N VJ=1 M=0.7)
.MODEL DE D (IS=8.75F BV=15 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=50GF60BR;50GF60BR;IGBTs;No Diode;APT 600V 75A 46.2NS TO-247
*SYM=IGBT
.SUBCKT 50GF60BR 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DDS 83 81 DO
DBE 85 81 DE
RC 85 71 10M
RE 83 74 1M
RG 72 82 33.3
CGE 82 83 2.09N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 2.24N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
.MODEL QOUT PNP (IS=472F NF=1.2 BF=5.1 CJE=3.76N
+ TF=46.2N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=43.6M ETA=333U VTO=5.5 KP=4.69)
.MODEL DR D (IS=47.2F CJO=2.24N VJ=1 M=0.82)
.MODEL DO D (IS=47.2F BV=599 CJO=1.52N VJ=1 M=0.7)
.MODEL DE D (IS=47.2F BV=20 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=8015JVFR;8015JVFR;MOSFETs N;Power >100V;APT 800V 44A 0.15ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 8015JVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 70.2M
RS 40 3 4.75M
RG 20 2 3.41
CGS 2 3 13.9N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 10.2N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=341U VTO=3.1 KP=79.5)
.MODEL DCGD D (CJO=10.2N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=183N N=1.5 RS=12.5M BV=800 CJO=3.16N VJ=0.8 M=0.42 TT=280N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=30D120B;30D120B;Diode;Si;APT 1200V 30A 0.7us TO-247
.MODEL 30D120B D (IS=1.97M RS=13M N=6.12 BV=1.2K IBV=250U
+ CJO=193P VJ=0.75 M=0.333 TT=1.01U)
**********
*SRC=33GF120LRD;33GF120LRD;IGBTs;Diode;APT 1200V 52A 50NS TO-264
*SYM=IGBT
.SUBCKT 33GF120LRD 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DSD 73 71 DO
RC 85 71 27.1M
RE 83 74 2.71M
RG 72 82 25.1
CGE 82 83 1.54N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 1.59N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
.MODEL QOUT PNP (IS=2.23E-16 NF=1.2 BF=5.1 CJE=2.76N
+ CJC=1.59N VJC=1 MJC=0.82 TF=50N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=43.6M ETA=1M VTO=5.5 KP=3.17)
.MODEL DR D (IS=2.23E-17 CJO=1.59N VJ=1 M=0.82)
.MODEL DO D (IS=15.8N RS=20M N=1.4 TT=101N BV=1.2K IBV=50U)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=10078BLL;10078SLL;MOSFETs N;Power >100V;APT 1000V 14A 0.75ohm D3 and TO-247
*SYM=POWMOSN
.SUBCKT 10078_LL 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.355
RS 40 3 19.8M
RG 20 2 10.7
CGS 2 3 2.4N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.05N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=4.1 KP=122)
.MODEL DCGD D (CJO=1.05N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=58.1N N=1.5 RS=39.3M BV=1K CJO=1.41N VJ=0.8 M=0.42 TT=800N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=100GF60JRD;100GF60JRD;IGBTs;Diode;APT 600V 140A 33.8NS ISOTOP
*SYM=IGBT
.SUBCKT 100GF60J 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DSD 73 71 DO
RC 85 71 11.4M
RE 83 74 1.14M
RG 72 82 1.07
CGE 82 83 4.11N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 58.7N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 1 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=1.34E-16 NF=1.2 BF=5.1 CJE=64.6N
+ CJC=4.19N VJC=1 MJC=0.82 TF=33.8N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=43.6M ETA=107U VTO=5.5 KP=0.111)
.MODEL DR D (IS=1.34E-17 CJO=4.19N VJ=1 M=0.82)
.MODEL DO D (IS=26.3N RS=12M N=1.4 TT=266N BV=600 IBV=27U)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=20GF120BRD;20GF120BRD;IGBTs;Diode;APT 1200V 32A 42.5NS TO-247
*SYM=IGBT
.SUBCKT 20GF120BRD 71 72 73
* TERMINALS: C G E
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DSD 73 71 DO
RC 85 71 58.9M
RE 83 74 5.89M
RG 72 82 4.69
CGE 82 83 1.03N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 10.1N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR