MOSFET Power Loss詳細計算公式
上傳時間： 2015-06-15
上傳用戶：huangtongyue
Abstract: Impedance mismatches in a radio-frequency (RF) electrical transmission line cause power loss andreflected energy. Voltage standing wave ratio (VSWR) is a way to measure transmission line imperfections. Thistutorial defines VSWR and explains how it is calculated. Finally, an antenna VSWR monitoring system is shown.
上傳時間： 2013-10-19
上傳用戶：yuanwenjiao
PW1555 is a programmable current limit switch with input voltage range selection and outputvoltage clamping. Extremely low RDS(ON) of the integrated protection N-channel FET helps toreduce power loss during the normal operation. Programmable soft-start time controls the slew rateof the output voltage during the start-up time. Independent enable control allows the complicatedsystem sequencing control. It integrates the over-temperature protection shutdown andautorecovery with hystersis
標簽： pw1555
上傳時間： 2022-02-14
上傳用戶：
CR6221 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is opti
上傳時間： 2013-04-24
上傳用戶：brucewan
CR6228 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is opti
上傳時間： 2013-05-17
上傳用戶：natopsi
摘要：從功率MOSFET內部結構和極間電容的電壓依賴關系出發，對功率MOSFET的開關現象及其原因進行了較深入分析。從實際應用的角度，對功率MOSFET開關過程的功率損耗和所需驅動功率進行了研究，提出了有關參數的計算方法，并對多種因素對開關特性的影響效果進行了實驗研究，所得出的結論對于功率MOSFET的正確運用和設計合理的MoSFET驅動電路具有指導意義．
上傳時間： 2013-11-10
上傳用戶：wfeel
It has been over a decade since the Chinese publication of Line Loss in Electric Power Systems. To keep pace with technological developments, I started a revision as early as 2002, following the main principles that the theoretical framework and characteristics of the first edition should be retained, with new contents added according to new problems after the reform of electric power systems and the new requirements for line loss management practices and in combination with practical experience.
上傳時間： 2020-06-07
上傳用戶：shancjb
Power Electronics is one of modern and key technologies in Electrical and Electronics Engineering for green power, sustainable energy systems, and smart grids. Especially, the transformation of existing electric power systems into smart grids is currently a global trend. The gradual increase of distributed generators in smart grids indicates a wide and important role for power electronic converters in the electric power system, also with the increased use of power electronics devices (nonlinear loads) and motor loadings, low cost, low-loss and high-performance shunt current quality compensators are highly demanded by power customers to solve current quality problems caused by those loadings.
標簽： Electronics Parallel Filters Power
上傳時間： 2020-06-07
上傳用戶：shancjb
設計功率MOSFET驅動電路時需重點考慮寄生參數對電路的影響。米勒電容作為MOSFET器件的一項重要參數,在驅動電路的設計時需要重點關注。重點觀察了MOSFET的開通和關斷過程中柵極電壓、漏源極電壓和漏源極電流的變化過程,并分析了米勒電容、寄生電感等寄生參數對漏源極電壓和漏源極電流的影響。分析了柵極電壓在米勒平臺附近產生振蕩的原因,并提出了抑制措施,對功率MOSFET的驅動設計具有一定的指導意義。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
標簽： mosfet
上傳時間： 2022-04-02
上傳用戶：默默
MOSFET和IGBT內部結構不同, 決定了其應用領域的不同.1, 由于MOSFET的結構, 通常它可以做到電流很大, 可以到上KA,但是前提耐壓能力沒有IGBT強。2,IGBT 可以做很大功率, 電流和電壓都可以, 就是一點頻率不是太高, 目前IGBT硬開關速度可以到100KHZ,那已經是不錯了. 不過相對于MOSFET的工作頻率還是九牛一毛,MOSFET可以工作到幾百KHZ,上MHZ,以至幾十MHZ,射頻領域的產品.3, 就其應用, 根據其特點:MOSFET應用于開關電源, 鎮流器, 高頻感應加熱, 高頻逆變焊機, 通信電源等等高頻電源領域;IGBT 集中應用于焊機, 逆變器, 變頻器,電鍍電解電源, 超音頻感應加熱等領域開關電源 (Switch Mode Power Supply ；SMPS) 的性能在很大程度上依賴于功率半導體器件的選擇，即開關管和整流器。雖然沒有萬全的方案來解決選擇IGBT還是MOSFET的問題，但針對特定SMPS應用中的IGBT 和 MOSFET進行性能比較，確定關鍵參數的范圍還是能起到一定的參考作用。本文將對一些參數進行探討，如硬開關和軟開關ZVS ( 零電壓轉換) 拓撲中的開關損耗，并對電路和器件特性相關的三個主要功率開關損耗—導通損耗、傳導損耗和關斷損耗進行描述。此外，還通過舉例說明二極管的恢復特性是決定MOSFET或 IGBT 導通開關損耗的主要因素， 討論二極管恢復性能對于硬開關拓撲的影響。導通損耗除了IGBT的電壓下降時間較長外， IGBT和功率MOSFET的導通特性十分類似。由基本的IGBT等效電路（見圖1）可看出，完全調節PNP BJT集電極基極區的少數載流子所需的時間導致了導通電壓拖尾（ voltage tail ）出現。
上傳時間： 2022-06-21
上傳用戶：
