交流瓦特/瓦特小時(shí)，乏爾/乏爾小時(shí)轉(zhuǎn)換器 特點(diǎn)： 精確度0.25%滿刻度 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測試5仟伏特(1.2x50us) 突波電壓測試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，穩(wěn)定性高 主要規(guī)格： 精確度: 0.25% F.S. (23 ±5℃) 輸入負(fù)載: <0.2VA (Voltage) <0.2VA (Current) 最大過載能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 輸出反應(yīng)速度: < 250ms(0~90%) 輸出負(fù)載能力: < 10mA for voltage mode < 10V for current mode 輸出之漣波 : < 0.1% F.S. 脈波輸出型態(tài): Photocouple of open collector (max.30V/40mA) 歸零調(diào)整范圍: 0~±5% F.S. 最大值調(diào)整范圍: 0~±10% F.S. 溫度系數(shù): 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣阻抗: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power/case) 突波測試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用環(huán)境條件: -20~60℃(20 to 90% RH non-condensed) 存放環(huán)境條件: -30~70℃(20 to 90% RH non-condensed) CE認(rèn)證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
C-Talk is interpreted scripting language with C-like syntax and dynamic type checking. Variables in C-Talk have no type. So there is no compile time type checking in C-Talk, all checking is performed at runtime. To preserve reference integrity, explicit memory deallocation is prohibited in C-Talk, unused objects are automatically deallocated by garbage collector.
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
