A garbage collector for C and C
標(biāo)簽： collector garbage and for
上傳時(shí)間： 2015-10-09
上傳用戶：Divine
WIRELESS SENSOR NETWORKS Environmental Sensor Application of Rain collector II with CrossBow Technology
標(biāo)簽： Environmental Application collector WIRELESS
上傳時(shí)間： 2014-01-27
上傳用戶：稀世之寶039
Driver collector e book very useful one.
標(biāo)簽： collector Driver useful book
上傳時(shí)間： 2014-01-17
上傳用戶：jackgao
英文描述： BCD to 7-Segment Decoder/Driver with Open-collector Outputs 中文描述： BCD碼到7段解碼器/驅(qū)動(dòng)器，集電極開路輸出
上傳時(shí)間： 2013-07-14
上傳用戶：m62383408
交流瓦特/瓦特小時(shí)，乏爾/乏爾小時(shí)轉(zhuǎn)換器 特點(diǎn)： 精確度0.25%滿刻度 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測(cè)試5仟伏特(1.2x50us) 突波電壓測(cè)試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，穩(wěn)定性高 主要規(guī)格： 精確度: 0.25% F.S. (23 ±5℃) 輸入負(fù)載: <0.2VA (Voltage) <0.2VA (Current) 最大過載能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 輸出反應(yīng)速度: < 250ms(0~90%) 輸出負(fù)載能力: < 10mA for voltage mode < 10V for current mode 輸出之漣波 : < 0.1% F.S. 脈波輸出型態(tài): Photocouple of open collector (max.30V/40mA) 歸零調(diào)整范圍: 0~±5% F.S. 最大值調(diào)整范圍: 0~±10% F.S. 溫度系數(shù): 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣阻抗: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power/case) 突波測(cè)試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用環(huán)境條件: -20~60℃(20 to 90% RH non-condensed) 存放環(huán)境條件: -30~70℃(20 to 90% RH non-condensed) CE認(rèn)證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
標(biāo)簽： 瓦特 交流 轉(zhuǎn)換器
上傳時(shí)間： 2013-11-11
上傳用戶：wettetw
The Art of C++ by Herbert Schildt ISBN:0072255129 McGraw-Hill/Osborne © 2004 The author of this text applies C++ to a wide variety of high-powered, practical applications, each focusing on a different aspect of the language. Examples range from a garbage collector subsystem and a thread control panel to AI-based searches and more.
標(biāo)簽： McGraw-Hill 0072255129 The Herbert
上傳時(shí)間： 2015-07-18
上傳用戶：lx9076
C-Talk is interpreted scripting language with C-like syntax and dynamic type checking. Variables in C-Talk have no type. So there is no compile time type checking in C-Talk, all checking is performed at runtime. To preserve reference integrity, explicit memory deallocation is prohibited in C-Talk, unused objects are automatically deallocated by garbage collector.
標(biāo)簽： interpreted Variables scripting checking
上傳時(shí)間： 2015-08-18
上傳用戶：王者A
學(xué)習(xí)JAVA的三十個(gè)基本概念目前Java主要應(yīng)用于中間件的開發(fā)(middleware)---處理客戶機(jī)于服務(wù)器之間的通信技術(shù),早期的實(shí)踐證明,Java不適合pc應(yīng)用程序的開發(fā),其發(fā)展逐漸變成在開發(fā)手持設(shè)備,互聯(lián)網(wǎng)信息站,及車載計(jì)算機(jī)的開發(fā).Java于其他語言所不同的是程序運(yùn)行時(shí)提供了平臺(tái)的獨(dú)立性,稱許可以在windows,solaris,linux其他操作系統(tǒng)上使用完全相同的代碼.Java的語法與C++語法類似,C++/C程序員很容易掌握,而且Java是完全的徹底的面向?qū)ο蟮?其中提出了很好的GC(Garbage collector)垃圾處理機(jī)制,防止內(nèi)存溢出。
標(biāo)簽： Java middleware JAVA 基本概念
上傳時(shí)間： 2013-12-26
上傳用戶：hgy9473
I2C driver for PIC, PICC compiler - bitbanged. Needs pull-up resistor on SCK and SDA and ports set for open collector
標(biāo)簽： bitbanged and compiler resistor
上傳時(shí)間： 2017-07-01
上傳用戶：yzhl1988
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
標(biāo)簽： igbt
上傳時(shí)間： 2022-06-20
上傳用戶：wangshoupeng199
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