實際應用條件下Power+MOSFET開關特性研究
摘要:從功率MOSFET內部結構和極間電容的電壓依賴關系出發,對功率MOSFET的開關現象及其原因進行了較深入分析。從實際應用的角度,對功率MOSFET開關過程的功率損耗和所需驅動功率進行了研究,提出了有關參數的計算方法,并對多種因素對開關特性的影響效果進行了實驗研究,所得出的結論對于功率MOSFE...
摘要:從功率MOSFET內部結構和極間電容的電壓依賴關系出發,對功率MOSFET的開關現象及其原因進行了較深入分析。從實際應用的角度,對功率MOSFET開關過程的功率損耗和所需驅動功率進行了研究,提出了有關參數的計算方法,并對多種因素對開關特性的影響效果進行了實驗研究,所得出的結論對于功率MOSFE...
Power conversion by virtue of its basic role produces harmonics due to theslicing of either voltages or currents. To a large extent the pollution in t...
This reference design (RD) features a fullyassembled and tested surface-mount printed circuitboard (PCB). The RD board utilizes the MAX48851:2 or 2:1 ...
OPTOELECTRONICS CIRCUIT COLLECTION AVALANCHE PHOTODIODE BIAS SUPPLY 1Provides an output voltage of 0V to +80V for reverse biasingan avalanche photodio...
Radio Frequency Integrated Circuit Design I enjoyed reading this book for a number of reasons. One reason is that itaddresses high-speed analog design...