These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specifi ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

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