Recent advances in low voltage silicon germaniumand BiCMOS processes have allowed the design andproduction of very high speed amplifi ers. Because theprocesses are low voltage, most of the amplifi er designshave incorporated differential inputs and outputs to regainand maximize total output signal swing. Since many lowvoltageapplications are single-ended, the questions arise,“How can I use a differential I/O amplifi er in a single-endedapplication?” and “What are the implications of suchuse?” This Design Note addresses some of the practicalimplications and demonstrates specifi c single-endedapplications using the 3GHz gain-bandwidth LTC6406differential I/O amplifi er.
介紹了一種反對稱漸變波導微帶探針過渡結構，采用高頻仿真軟件HFSS仿真分析了這個波導微帶過渡結構在 W 頻段的特性，并對影響過渡性能的幾個因素進行了敏感性分析，得出了可供工程應用參考的設計曲線。在全波導帶寬內，實現了插入損耗小于0.088 dB，回波損耗大于27 dB。該結構具有寬頻帶、結構簡單和易加工等優點，可廣泛用于毫米波固態電路系統中。
