Hot Carriers in Quasi-2-D Polar Semiconductors
標簽： Semiconductors Carriers Quasi Polar
上傳時間： 2017-06-21
上傳用戶：chenlong
This simulation script set allows for an OFDM transmission to be simulated. Imagetx.m generates the OFDM signal, saving it as a windows WAV file. This allows the OFDM signal to be played out a sound card and recorded back. Imagerx.m decodes the WAV to extract the data. settings.m contains all the common settings to specify all the simulation parameters such as FFT size, number of Carriers, input data source file, input and output WAV files, etc.
標簽： transmission simulation generates simulated
上傳時間： 2013-12-15
上傳用戶：dyctj
OFDM Modem Applications • Digital Video Broadcast (DVB) • Digital Audio Broadcast (DAB) • Broadband Wireless Access (802.16x) • Wireless LAN (802.11x & HiperLAN) Orthogonal OFDM Sub-Carriers Orthogonal Frequency Division Multiplexing (OFDM)
標簽： Broadcast Digital 8226 Applications
上傳時間： 2016-03-23
上傳用戶：cc1
In 揚erformance of multi-carrier DS CDMA Systems?we apply a multi-carrier signaling technique to a direct-sequence CDMA system, where a data sequence multiplied by a spreading sequence modulates multiple Carriers, rather than a single carrier. The receiver provides a correlator for each carrier, and the outputs of the correlators are combined with a maximal-ratio combiner. This type of signaling has the desirable properties of exhibiting a narrowband interference suppression effect, along with robustness to fading, without requiring the use of either an explicit RAKE structure or an interference suppression filter.
標簽： multi-carrier erformance signaling technique
上傳時間： 2017-07-31
上傳用戶：宋桃子
Standard transfer specification (STS) –Physical layer protocol for one-way numeric and magnetic card token Carriers .
上傳時間： 2017-02-04
上傳用戶：aarons大叔
Microwave radio network design is a subset of activities that constitute the overall transmission network design. Transmission networks are sometimes called transport networks, access networks, or connectivity networks. For many wireless Carriers, microwave is becoming a popu- lar preference over wireline (leased lines) transport for many reasons, especially as microwave radio equipment costs decrease and installation becomes simpler. Low monthly operating costs can undercut those of typical single (and especially multiple) T1/E1 expenses, proving it to be more economical over the long term—usually two to four years. Network operators also like the fact that they can own and control microwave radio networks instead of relying on other service providers for network components.
標簽： Transmission Microwave Networks
上傳時間： 2020-05-28
上傳用戶：shancjb
Battery systems for energy storage are among the most relevant technologies of the 21 st century. They – in particular modern lithium-ion batteries (LIB) – are enablers for the market success of electric vehicles (EV) as well as for stationary energy storage solutions for balancing fluctuations in electricity grids resulting from the integrationofrenewableenergysourceswithvolatilesupply 1 .BothEVandstationary storage solutions are important because they foster the transition from the usage of fossil energy Carriers towards cleaner renewable energy sources. Furthermore, EV cause less local air pollution and noise emissions compared to conventional combustion engine vehicles resulting in better air quality especially in urban areas. Unfortunately, to this day, various technological and economic challenges impede a broad application of batteries for EV as well as for large scale energy storage and load leveling in electricity grids.
標簽： Multiscale Simulation Approach
上傳時間： 2020-06-07
上傳用戶：shancjb
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole Carriers are injected from the collector (acts as an emitter).5. Injected hole Carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
標簽： igbt
上傳時間： 2022-06-20
上傳用戶：wangshoupeng199
SMT（Surface mount technology）是可在“板面上”滿及焊牢棲多敷“表面黏裝零件的電子裝配技術.侵貼：1.可在板上雨成同特焊接，封裝密度提高50~70%.WW2.l短，提高博輸速度3.可使用更高刪敷.4.自勤化，快速，成本低.1.表面貼裝零件SOIC（small outline integrate circle）RESISTANCE（電阻）CAPACITANCE（電容）AMPLCC（plastic leaded chip Carriers）CONNECT etc.（結器）封裝材料1.）陶瓷（BeO）：精度高，密封度高（CTE：5～7PPM/℃）封板子熟膨服要求高2.）聚硫胺醚（Polyetherimide）：一可用玻璃逛行封合的耐高溫熟塑性塑廖，機械，電子性能侵良AwIR各波皆敏感，易分解，生“酸泡”現象.3.）熔融矽砂（Fused silica），暖氧橫脂
標簽： fpc
上傳時間： 2022-07-27
上傳用戶：zhaiyawei
