Abstract: This tutorial discusses proper printed-circuit board (PCB) grounding for mixed-signal designs. Formost applications a simple method without cuts in the ground plane allows for successful PCB layouts withthis kind of IC. We begin this document with the basics: where the current flows. Later, we describe how toplace components and route signal traces to minimize problems with crosstalk. Finally, we move on toconsider power supply-currents and end by discussing how to extend what we have learned to circuits withmultiple mixed-signal ICs.
交流功率因數(shù)轉(zhuǎn)換器 特點(diǎn)： 精確度0.25%滿刻度 ±0.25o 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測(cè)試5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波電壓測(cè)試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，穩(wěn)定性高 主要規(guī)格： 精確度: 0.25% F.S. ±0.25°(23 ±5℃) 輸入負(fù)載: <0.2VA (Voltage) <0.2VA (Current) 最大過載能力: Current related input: 3 x rated continuous 10 x rated 30 sec. 25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 輸出反應(yīng)速度: < 250ms(0~90%) 輸出負(fù)載能力: < 10mA for voltage mode < 10V for current mode 輸出之漣波: < 0.1% F.S. 歸零調(diào)整范圍: 0~ ±5% F.S. 最大值調(diào)整范圍: 0~ ±10% F.S. 溫度系數(shù): 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣抗阻: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power/case) 突波測(cè)試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用環(huán)境條件: -20~60℃(20 to 90% RH non-condensed) 存放環(huán)境條件: -30~70℃(20 to 90% RH non-condensed) CE認(rèn)證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
交流電壓，電流轉(zhuǎn)換器 特點(diǎn)： 精確度0.25%滿刻度(RMS) 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測(cè)試5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波電壓測(cè)試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，穩(wěn)定性高 2:主要規(guī)格 精確度:0.25%F.S.(RMS) (23 ±5℃) 輸入負(fù)載: <0.2VA(voltage) <0.2VA(current) 最大過載能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2x rated continuous 輸出反應(yīng)時(shí)間: <250ms (0~90%) 輸出負(fù)載能力: <10mA for voltage mode <10V for current mode 輸出漣波: <0.1% F.S. 歸零調(diào)整范圍: 0~±5% F.S. 最大值調(diào)整范圍: 0~±10% F.S. 溫度系數(shù): 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣抗阻: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power) 行動(dòng)測(cè)試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV (1.2 x 50us) 突波測(cè)試: 2.5KV-0.25ms/1MHz 使用環(huán)境條件: -20~60℃(20 to 90% RH non-condensed) 存放環(huán)境條件: -30~70℃(20 to 90% RH non-condensed) CE認(rèn)證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
The MAX17600–MAX17605 devices are high-speedMOSFET drivers capable of sinking /sourcing 4A peakcurrents. The devices have various inverting and noninvertingpart options that provide greater flexibility incontrolling the MOSFET. The devices have internal logiccircuitry that prevents shoot-through during output-statchanges. The logic inputs are protected against voltagespikes up to +14V, regardless of VDD voltage. Propagationdelay time is minimized and matched between the dualchannels. The devices have very fast switching time,combined with short propagation delays (12ns typ),making them ideal for high-frequency circuits. Thedevices operate from a +4V to +14V single powersupply and typically consume 1mA of supply current.The MAX17600/MAX17601 have standard TTLinput logic levels, while the MAX17603 /MAX17604/MAX17605 have CMOS-like high-noise margin (HNM)input logic levels. The MAX17600/MAX17603 are dualinverting input drivers, the MAX17601/MAX17604 aredual noninverting input drivers, and the MAX17602 /MAX17605 devices have one noninverting and oneinverting input. These devices are provided with enablepins (ENA, ENB) for better control of driver operation.
Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
Abstract: Specifications such as noise, effective number of bits (ENOB), effective resolution, and noise-free resolution inlarge part define how accurate an ADC really is. Consequently, understanding the performance metrics related to noise isone of the most difficult aspects of transitioning from a SAR to a delta-sigma ADC. With the current demand for higherresolution, designers must develop a better understanding of ADC noise, ENOB, effective resolution, and signal-to-noiseratio (SNR). This application note helps that understanding.
Abstract: This article discusses application circuits for Maxim force/sense digital-to-analog converters (DACs). Applications include:selectable fixed-gain DAC, programmable gain DAC, photodiode bias control, amperometric sensor control, digitally programmablecurrent source, Kelvin load sensing, temperature sensing, and high current DAC output. A brief description of the various DAC outputconfigurations is also given.
Abstract: Transimpedance amplifiers (TIAs) are widely used to translate the current output of sensors like photodiode-to-voltagesignals, since several circuits and instruments can only accept voltage input. An operational amplifier with a feedback resistor fromoutput to the inverting input is the most straightforward implementation of such a TIA. However, even this simple TIA circuit requirescareful trade-offs among noise gain, offset voltage, bandwidth, and stability. Clearly stability in a TIA is essential for good, reliableperformance. This application note explains the empirical calculations for assessing stability and then shows how to fine-tune theselection of the feedback phase-compensation capacitor.
