本裝置是一個以HT46R71D 為主芯片，配合傳感器組成的汽車輪胎氣壓檢測裝 置，最終取高三位有效值于LCD 顯示，有四種顯示單位供切換（Psi、Bar、Kpa、 Kgf/cm2）。本裝置僅為參考范例，使用時，為提高準確度，建議多量測些組數 據來構建Sensor Output Voltage - Discharge Time (V-T)表格，并作相應校準。
上傳時間： 2015-11-19
上傳用戶：shinesyh
本裝置是一個以HT46R71D 為主芯片，配合傳感器組成的汽車輪胎氣壓檢測裝 置，最終取高三位有效值于LCD 顯示，有四種顯示單位供切換（Psi、Bar、Kpa、 Kgf/cm2）。本裝置僅為參考范例，使用時，為提高準確度，建議多量測些組數 據來構建Sensor Output Voltage - Discharge Time (V-T)表格，并作相應校準。
上傳時間： 2014-01-14
上傳用戶：cxl274287265
The MAX481E, MAX483E, MAX485E, MAX487E–MAX491E, and MAX1487E are low-power transceivers for RS-485 and RS-422 communications in harsh environments. Each driver output and receiver input is protected against ±15kV electrostatic Discharge (ESD) shocks, without latchup. These parts contain one driver and one receiver. The MAX483E, MAX487E, MAX488E, and MAX489E feature reduced slewrate drivers that minimize EMI and reduce reflections caused by improperly terminated cables, thus allowing error-free data transmission up to 250kbps. The driver slew rates of the MAX481E, MAX485E, MAX490E, MAX491E, and MAX1487E are not limited, allowing them to transmit up to 2.5Mbps.
標簽： MAX transceivers 485 low-power
上傳時間： 2013-12-22
上傳用戶：小寶愛考拉
AEC-Q100 qualified ? 12 V and 24 V battery systems compliance ? 3.3 V and 5 V logic compatible I/O ? 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) ? Operating battery supply voltage 3.8 V to 36 V ? Operating VDD supply voltage 4.5 V to 5.5 V ? All device pins, except the ground pins, withstand at least 40 V ? Programmable gate charge/Discharge currents for improving EMI behavior
標簽： configurable Automotive pre-driver suitable channel systems MOSFET fully High side
上傳時間： 2019-03-27
上傳用戶：guaixiaolong
This effort started as an answer to the numerous questions the authors have repeatedly had to answer about electrostatic Discharge (ESD) protection and input/output (1/0) designs. In the past no comprehensive book existed suffi- ciently covering these areas, and these topics were rarely taught in engineering schools. Thus first-time I/O and ESD protection designers have had consider- able trouble getting started. This book is in part an answer to such needs.
上傳時間： 2020-06-05
上傳用戶：shancjb
Contamination and electrostatic Discharge (ESD) are now becoming recognized as factors affecting yield and reliability in an ever-increasing number of industries. Whereas contam- ination traditionally was recognized as affecting the semiconductor, disk drive, aerospace, pharmaceutical, and medical device industries, today such industries as automobile and food production are also discovering the benefits of contamination control. ESD control has experienced a similar growth in applications.
標簽： Contamination Control and ESD
上傳時間： 2020-06-05
上傳用戶：shancjb
Static electricity is the most ancient form of electricity known to humans. More than 2000 years ago, the Greeks recognized the attraction between certain mate- rials when they were rubbed together; indeed, the word electricity comes from the Greek elektron, which means amber. During the seventeenth and eighteenth centuries, several key experiments were conducted to understand and measure static electricity. But the discovery of electromagnetism and its formidable break- through has rapidly outgrown interest in static electricity. Even today, where the industrial applications of static electricity are not insignificant, they cannot compare with those of electromagnetism and electrodynamics.
標簽： Understand Discharge Electro Static
上傳時間： 2020-06-05
上傳用戶：shancjb
Electrostatic Discharge (ESD) phenomena have been known to mankind since the Greek Empire when Thales of Miletus, one of the Seven Sages of Greece, noticed the attraction of strands of hay to amber, leading to the coining of the word ‘‘electron.’’ In the 17th century, Gilbert and Cabeo addressed the attractive and repulsive nature of electricity. In the 18th century, a rapid increase of interest occurred for scientists in the understanding of electrical physics—Gray, du Fay, Nollet, Musschenbroeck, Franklin, Watson, Aepinus, Canton,
上傳時間： 2020-06-05
上傳用戶：shancjb
Failure analysis is invaluable in the learning process of electrostatic Discharge (ESD) and electrical overstress (EOS) protection design and development [1–8]. In the failure analysis of EOS, ESD, and latchup events, there are a number of unique failure analysis processes andinformationthatcanprovidesignificantunderstandingandillumination[4].Today,thereis still no design methodology or computer-aided design (CAD) tool which will predict EOS, ESDprotectionlevels,andlatchupinasemiconductorchip;thisisoneofthesignificantreasons why failure analysis is critical to the ESD design discipline.
標簽： Mechanisms Failure Models ESD and
上傳時間： 2020-06-05
上傳用戶：shancjb
Electrostatic Discharge (ESD) phenomena have been known to mankind since Thales of Miletus in approximately 600 B.C.E. noticed the attraction of strands of hay to amber. Two thousand six hundred years have passed and the quest to obtain a better under- standing of electrostatics and ESD phenomenon continues. Today, the manufacturing of microelectronics has continued the interest in the field of electrostatic phenomenon spanning factory issues, tooling, materials, and the microelectronic industry
上傳時間： 2020-06-05
上傳用戶：shancjb
