As we enter the next millennium, there are clear technological patterns. First, the
electronic industry continues to scale microelectronic structures to achieve Faster
devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic
discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI)
continue to be a threat to these scaled structures. This dichotomy presents a dilemma
for the scaling of semiconductor technologies and a future threat to new technologies.
Technological advancements, material changes, design techniques, and simulation can
fend off this growing concern – but to maintain this ever-threatening challenge, one must
continue to establish research and education in this issue.
標簽:
ESD-Phenomena-and-the-Reliability
上傳時間:
2020-06-05
上傳用戶:shancjb
Thepredecessorvolumeofthisbookwaspublishedin1996.Intheyears
since then, some things have changed and some have not.
Two of the things that have not changed are the desire for better
models and Faster simulations. I performed the original simulations on
my “hyperfast” 133-MHz computer! At the time, I thought if I could just
getaFastercomputer,allofourSPICEproblemswouldbehistory,right?
TodayIamsimulatingonacomputerthathasa2.6-GHzprocessorwith
512 MB of RAM, and I would still say that simulations run too slow.
The computer technology has evolved, but so have the models. In 1996
wewereperformingsimulationson100-kHzpowerconverters,whereas
today I routinely see 1- and 2-MHz power converters.
標簽:
Switch-Mode
Simulation
Supply
Power
上傳時間:
2020-06-07
上傳用戶:shancjb