深入理解理解功率MOSFET的RDSON
上傳時間: 2013-10-12
上傳用戶:zjwangyichao
經(jīng)由改變外部閘極電阻(gate resistors)或增加一個跨在汲極(drain)和源極(source)的小電容來調(diào)整MOSFET的di/dt和dv/dt,去觀察它們?nèi)绾螌MI產(chǎn)生影響。然後我們可了解到如何在效率和EMI之間取得平衡。我們拿一個有著單組輸出+12V/4.1A及初級側(cè)MOSFET AOTF11C60 (αMOSII/11A/600V/TO220F) 的50W電源轉(zhuǎn)接器(adapter)來做傳導(dǎo)性及輻射性EMI測試。
上傳時間: 2014-09-08
上傳用戶:swing
在電源設(shè)計中,工程人員時常會面臨控制 IC 驅(qū)動電流不足的問題,或者因為閘極驅(qū)動損耗導(dǎo)致控制 IC 功耗過大。為解決這些問題,工程人員通常會採用外部驅(qū)動器。目前許多半導(dǎo)體廠商都有現(xiàn)成的 MOSFET 積體電路驅(qū)動器解決方案,但因為成本考量,工程師往往會選擇比較低價的獨(dú)立元件。
上傳時間: 2013-11-19
上傳用戶:阿譚電器工作室
Abstract: This document details the Lakewood (MAXREFDES7#) subsystem reference design, a 3.3V input, ±12V (±15V) output, isolated power supply. The Lakewood reference design includes a 3W primary-side transformer H-bridge driver for isolated supplies, and two wide input range and adjustable output low-dropout linear regulators (LDOs). Test results and hardware files are included.
標(biāo)簽: MAXREFDES Lakewood Isolated Output
上傳時間: 2013-11-02
上傳用戶:fengzimili
Abstract: This document details the Riverside (MAXREFDES8#) subsystem reference design, a 3.3V input, 12V (15V) output, isolated power supply. The Riverside reference design includes a 3W primary-side transformer H-bridge driver for isolated supplies, and one wide input range and adjustable output low-dropout linear regulator (LDO). Test results and hardware files are included.
標(biāo)簽: Riverside MAXREFDES Isolated Output
上傳時間: 2013-11-16
上傳用戶:會稽劍客
Abstract: Some power architectures require the power supply sequencer (or system manager) to controldownstream power MOSFETs to allow power to flow into branch circuits. This application note explains howsystem power sequencing and level shifting can be accomplished using a low-voltage system manager
標(biāo)簽: MOSFET 電平轉(zhuǎn)換 控制 功率
上傳時間: 2013-11-02
上傳用戶:wys0120
IGBT和MOSFET功率模塊應(yīng)用手冊
標(biāo)簽: MOSFET IGBT 功率模塊 應(yīng)用手冊
上傳時間: 2013-11-19
上傳用戶:JasonC
開關(guān)電源類書籍:Switch-Mode Power Supply Simulation^Designing with SPICE 3.pdf ·
標(biāo)簽: Switch-Mode Simulation Designing Supply
上傳時間: 2013-11-20
上傳用戶:aa17807091
功率場效應(yīng)晶體管由于具有諸多優(yōu)點而得到廣泛的應(yīng)用;但它承受短時過載的能力較弱,使其應(yīng)用受到一定的限制。分析了MOSFET器件驅(qū)動與保護(hù)電路的設(shè)計要求;計算了MOSFET驅(qū)動器的功耗及MOSFET驅(qū)動器與MOSFET的匹配;設(shè)計了基于IR2130驅(qū)動模塊的MOSFET驅(qū)動保護(hù)電路。該電路具有結(jié)構(gòu)簡單,實用性強(qiáng),響應(yīng)速度快等特點。在驅(qū)動無刷直流電機(jī)的應(yīng)用中證明,該電路驅(qū)動能力及保護(hù)功能效果良好。
標(biāo)簽: MOSFET 驅(qū)動保護(hù)電路
上傳時間: 2013-12-18
上傳用戶:ccclll
The CN3052A is a complete constant-current /constant voltage linear charger for single cell Li-ion and Li Polymer rechargeable batteries. The device contains an on-chip power MOSFET and eliminates the need for the external sense resistor and blocking diode.
上傳時間: 2013-11-10
上傳用戶:子虛烏有
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