Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
Traditionally, an Electronic Circuit Breaker (ECB) comprisesa MOSFET, a MOSFET controller and a current senseresistor. The LTC®4213 does away with the sense resistorby using the RDS(ON) of the external MOSFET. The resultis a simple, small solution that offers a signifi cant lowinsertion loss advantage at low operating load voltage.The LTC4213 features two circuit breaking responses tovarying overload conditions with three selectable tripthresholds and a high side drive for an external N-channelMOSFET switch.
The LTC®3610 is a high power monolithic synchronousstep-down DC/DC regulator that can deliver up to 12Aof continuous output current from a 4V to 24V (28Vmaximum) input supply. It is a member of a high currentmonolithic regulator family (see Table 1) that featuresintegrated low RDS(ON) N-channel top and bottomMOSFETs. This results in a high effi ciency and highpower density solution with few external components.This regulator family uses a constant on-time valleycurrent mode architecture that is capable of operatingat very low duty cycles at high frequency and with veryfast transient response. All are available in low profi le(0.9mm max) QFN packages.
ADO連接數(shù)據(jù)庫字符串大全，（VP,Excel,文本,Sybase,.NET等)。This page contains sample ADO connection strings for ODBC DSN / DSN-Less,
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The SI2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection orin other Switching application
The PW3467 uses advanced trench technology to provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection orin other Switching application
