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國際會議上關于磨損平衡的一片論文：A Stackable Wear-Leveling Module for Linux-Based Flash File Systems
標簽： Wear-Leveling Linux-Based Stackable Systems
上傳時間： 2014-08-15
上傳用戶：Pzj
是PDF文檔，是臺灣一大學教授的論文，主要是講NAND FLASH Wear leveling 算法的理論性文章，上傳上來是提供大家一起學習！
標簽： 文檔
上傳時間： 2016-10-13
上傳用戶：evil
一． eMMC的概述eMMC (Embedded MultiMedia Card) 為MMC協會所訂立的內嵌式存儲器標準規格，主要是針對手機產品為主。eMMC的一個明顯優勢是在封裝中集成了一個控制器， 它提供標準接口并管理閃存， 使得手機廠商就能專注于產品開發的其它部分，并縮短向市場推出產品的時間。這些特點對于希望通過縮小光刻尺寸和降低成本的NAND供應商來說，具有同樣的重要性。二． eMMC的優點eMMC目前是最當紅的移動設備本地存儲解決方案，目的在于簡化手機存儲器的設計，由于NAND Flash 芯片的不同廠牌包括三星、KingMax、東芝(Toshiba) 或海力士(Hynix) 、美光(Micron) 等，入時，都需要根據每家公司的產品和技術特性來重新設計，過去并沒有哪個技術能夠通用所有廠牌的NAND Flash 芯片。而每次NAND Flash 制程技術改朝換代，包括70 納米演進至50 納米，再演進至40 納米或30 納米制程技術，手機客戶也都要重新設計， 但半導體產品每1 年制程技術都會推陳出新， 存儲器問題也拖累手機新機種推出的速度，因此像eMMC這種把所有存儲器和管理NAND Flash 的控制芯片都包在1 顆MCP上的概念，逐漸風行起來。eMMC的設計概念，就是為了簡化手機內存儲器的使用，將NAND Flash 芯片和控制芯片設計成1 顆MCP芯片，手機客戶只需要采購eMMC芯片，放進新手機中，不需處理其它繁復的NAND Flash 兼容性和管理問題，最大優點是縮短新產品的上市周期和研發成本，加速產品的推陳出新速度。閃存Flash 的制程和技術變化很快，特別是TLC 技術和制程下降到20nm階段后，對Flash 的管理是個巨大挑戰，使用eMMC產品，主芯片廠商和客戶就無需關注Flash 內部的制成和產品變化，只要通過eMMC的標準接口來管理閃存就可以了。這樣可以大大的降低產品開發的難度和加快產品上市時間。eMMC可以很好的解決對MLC 和TLC 的管理， ECC 除錯機制(Error Correcting Code) 、區塊管理(BlockManagement)、平均抹寫儲存區塊技術 (Wear Leveling) 、區塊管理（ Command Managemen）t，低功耗管理等。eMMC核心優點在于生產廠商可節省許多管理NAND Flash 芯片的時間，不必關心NAND Flash 芯片的制程技術演變和產品更新換代，也不必考慮到底是采用哪家的NAND Flash 閃存芯片，如此， eMMC可以加速產品上市的時間，保證產品的穩定性和一致性。
標簽： emmc
上傳時間： 2022-06-20
上傳用戶：jiabin
hard wear...............
上傳時間： 2013-12-23
上傳用戶：er1219
對于瀝青混凝土攤鋪機自動找平控制系統來說，數字式控制系統的研制是目前的一個方向。介紹了一種基于CAN總線的數字式自動找平控制系統。該系統以CAN總線作為通信方式，PWM控制信號通過C8051F040單片機內部PCA可編程計數器陣列產生，并具有結構簡單、信號穩定、實時性強、易擴展的特點。通過硬件實現和系統運行達到了比較理想的控制效果，驗證了系統的可行性。 Abstract: A digital auto-leveling control system based on CAN Bus is introduced.It uses CAN Bus as the method of communication and creates PWM signals by programmable counter array in C8051F040 microcontroller. The system is simple, stable, real-time and expansive.
上傳時間： 2013-10-09
上傳用戶：ligi201200
Because of the poor observability of Inertial Navigation System on stationary base, the estimation error of the azimuth will converge very slowly in initial alignment by means of Kalmari filtering, and making the time initial alignment is longer. In this paper, a fast estimation method of the azimuth error is creatively proposed for the initial alignment of INS on stationary base. On the basis of the the fast convergence of the leveling error, the azimuth error can be directly calculated. By means of this fast initial alignment method, the time of initial alignment is reduced greatly. The computer simulation results illustrate the efficiency of the method.
標簽： observability Navigation estimation stationary
上傳時間： 2014-01-03
上傳用戶：wuyuying
Evaluation of friction mechanisms and wear rates on rubber tire materials by low-cost laboratory tests
上傳時間： 2016-05-16
上傳用戶：zz17110439
Battery systems for energy storage are among the most relevant technologies of the 21 st century. They – in particular modern lithium-ion batteries (LIB) – are enablers for the market success of electric vehicles (EV) as well as for stationary energy storage solutions for balancing fluctuations in electricity grids resulting from the integrationofrenewableenergysourceswithvolatilesupply 1 .BothEVandstationary storage solutions are important because they foster the transition from the usage of fossil energy carriers towards cleaner renewable energy sources. Furthermore, EV cause less local air pollution and noise emissions compared to conventional combustion engine vehicles resulting in better air quality especially in urban areas. Unfortunately, to this day, various technological and economic challenges impede a broad application of batteries for EV as well as for large scale energy storage and load leveling in electricity grids.
標簽： Multiscale Simulation Approach
上傳時間： 2020-06-07
上傳用戶：shancjb
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
標簽： DDR4
上傳時間： 2022-01-09
上傳用戶：
3.DDR布線細節i.MX6DDR的布線，可以將所有信號分成3組：數據線組、地址線組和控制線組，每組各自設置自己的布線規則，但同時也要考慮組與組之間的規則。3.1數據線的交換在DDR3的布線中，可以根據實際情況交換數據線的線序，但必須保證是以字節為單位（數據0~7間是允許交換線序，跨字節是不允許的），這樣可以簡化設計。■布線盡量簡短，減少過孔數量。■布線時避免改變走線參考層面。■數據線線序，推薦DO、D8、D16、D24、D32、D40、D48、D56不要改變，其它的數據線可以在字節內自由調換（see the“Write Leveling"sectioninJESD79-3E■DQS和DQM不能調換，必須在相應通道。3.2DDR3（64bits）T型拓撲介紹當設計采用T型拓撲結構，請確認以下信息。■布線規則見上文表2。■終端電阻可以省略。■布線長度的控制。DDR數量限制在4片以下。
標簽： ddr3
上傳時間： 2022-07-05
上傳用戶：
