亚洲欧美第一页_禁久久精品乱码_粉嫩av一区二区三区免费野_久草精品视频

蟲(chóng)蟲(chóng)首頁(yè)| 資源下載| 資源專輯| 精品軟件
登錄| 注冊(cè)

densities

  • Classify using the minimum error criterion via histogram estimation of the densities

    Classify using the minimum error criterion via histogram estimation of the densities

    標(biāo)簽: estimation the criterion densities

    上傳時(shí)間: 2015-08-28

    上傳用戶:wang0123456789

  • we shall examine nonparametric procedures that can be used with arbitrary distributions and without

    we shall examine nonparametric procedures that can be used with arbitrary distributions and without the assumption that the forms of theunderlying densities are known.

    標(biāo)簽: distributions nonparametric procedures arbitrary

    上傳時(shí)間: 2016-02-27

    上傳用戶:songnanhua

  • Silicon-Based+RF+Front-Ends

    Ultra-wideband (UWB) technology enables high data-rate short-range communica- tion, in excess of hundredmegabit-per-secondsand up to multi-gigabit-per-seconds, over a wide spectrum of frequencies, while keeping power consumption at low lev- els. This low power operation results in a less-interfering co-existence with other existed communication technologies (e.g., UNII bands). In addition to carrying a huge amount of data over a distance of up to 230 feet at very low power (less than 0.5mW), the UWB signal has the ability to penetrate through the doors and other obstacles that tend to reflect signals at more limited bandwidths and higher power densities.

    標(biāo)簽: Silicon-Based Front-Ends RF

    上傳時(shí)間: 2020-06-01

    上傳用戶:shancjb

  • ESD Protection Device and Circuit Design

    The challenges associated with the design and implementation of Electro- static Discharge (ESD) protection circuits become increasingly complex as technology is scaled well into nano-metric regime. One must understand the behavior of semiconductor devices under very high current densities, high temperature transients in order to surmount the nano-meter ESD challenge. As a consequence, the quest for suitable ESD solution in a given technology must start from the device level. Traditional approaches of ESD design may not be adequate as the ESD damages occur at successively lower voltages in nano-metric dimensions.

    標(biāo)簽: Protection Circuit Device Design ESD and

    上傳時(shí)間: 2020-06-05

    上傳用戶:shancjb

主站蜘蛛池模板: 民勤县| 临澧县| 新沂市| 德安县| 广丰县| 金堂县| 长子县| 微博| 洛阳市| 泸溪县| 札达县| 孙吴县| 阳原县| 大厂| 西乌| 武汉市| 凌海市| 绥化市| 托克逊县| 胶州市| 阿拉尔市| 遂平县| 连云港市| 中牟县| 湖口县| 江安县| 东至县| 永丰县| 鄄城县| 余庆县| 永善县| 枣强县| 沐川县| 绥江县| 旅游| 翼城县| 洱源县| 观塘区| 抚远县| 万载县| 康乐县|