COMMANDE D un convertiseur AC/DC 脿 deux niveaux par hysteresis
標簽： convertiseur hysteresis COMMANDE niveaux
上傳時間： 2017-03-30
上傳用戶：nairui21
The equal-area theorem●This is sinusoidal PWM (SPWM)●The equal-area theorem can be appliedto realize any shape of waveforms ●Natural sampling●Calculation based on equal-area criterion●Selected harmonic elimination●Regular sampling●hysteresis-band control●Triangular wave comparison withfeedback control
上傳時間： 2013-11-22
上傳用戶：linyao
磁芯電感器的諧波失真分析 摘 要：簡述了改進鐵氧體軟磁材料比損耗系數和磁滯常數ηB，從而降低總諧波失真THD的歷史過程，分析了諸多因數對諧波測量的影響，提出了磁心性能的調控方向。 關鍵詞：比損耗系數， 磁滯常數ηB ，直流偏置特性DC-Bias，總諧波失真THD Analysis on THD of the fer rite co res u se d i n i nductancShi Yan Nanjing Finemag Technology Co. Ltd., Nanjing 210033 Abstract: Histrory of decreasing THD by improving the ratio loss coefficient and hysteresis constant of soft magnetic ferrite is briefly narrated. The effect of many factors which affect the harmonic wave testing is analysed. The way of improving the performance of ferrite cores is put forward. Key words: ratio loss coefficient，hysteresis constant，DC-Bias，THD 近年來，變壓器生產廠家和軟磁鐵氧體生產廠家，在電感器和變壓器產品的總諧波失真指標控制上，進行了深入的探討和廣泛的合作，逐步弄清了一些似是而非的問題。從工藝技術上采取了不少有效措施，促進了質量問題的迅速解決。本文將就此熱門話題作一些粗淺探討。 一、 歷史回顧 總諧波失真（Total harmonic distortion） ，簡稱THD，并不是什么新的概念，早在幾十年前的載波通信技術中就已有嚴格要求<1>。1978年郵電部公布的標準YD/Z17－78“載波用鐵氧體罐形磁心”中，規定了高μQ材料制作的無中心柱配對罐形磁心詳細的測試電路和方法。如圖一電路所示，利用LC組成的150KHz低通濾波器在高電平輸入的情況下測量磁心產生的非線性失真。這種相對比較的實用方法，專用于無中心柱配對罐形磁心的諧波衰耗測試。 這種磁心主要用于載波電報、電話設備的遙測振蕩器和線路放大器系統，其非線性失真有很嚴格的要求。 圖中 ZD —— QF867 型阻容式載頻振蕩器，輸出阻抗 150Ω， Ld47 —— 47KHz 低通濾波器，阻抗 150Ω，阻帶衰耗大于61dB， Lg88 ——并聯高低通濾波器，阻抗 150Ω，三次諧波衰耗大于61dB Ld88 ——并聯高低通濾波器，阻抗 150Ω，三次諧波衰耗大于61dB FD —— 30～50KHz 放大器， 阻抗 150Ω， 增益不小于 43 dB，三次諧波衰耗b3(0)≥91 dB, DP —— Qp373 選頻電平表，輸入高阻抗， L ——被測無心罐形磁心及線圈， C ——聚苯乙烯薄膜電容器CMO-100V-707APF±0.5%,二只。 測量時，所配用線圈應用絲包銅電磁線SQJ9×0.12(JB661-75)在直徑為16.1mm的線架上繞制 120 匝， （線架為一格） ， 其空心電感值為 318μH（誤差1％） 被測磁心配對安裝好后，先調節振蕩器頻率為 36.6～40KHz， 使輸出電平值為+17.4 dB， 即選頻表在 22′端子測得的主波電平 （P2）為+17.4 dB，然后在33′端子處測得輸出的三次諧波電平（P3）， 則三次諧波衰耗值為：b3(+2)= P2+S+ P3 式中：S 為放大器增益dB 從以往的資料引證， 就可以發現諧波失真的測量是一項很精細的工作，其中測量系統的高、低通濾波器，信號源和放大器本身的三次諧波衰耗控制很嚴，阻抗必須匹配，薄膜電容器的非線性也有相應要求。濾波器的電感全由不帶任何磁介質的大空心線圈繞成，以保證本身的“潔凈” ，不至于造成對磁心分選的誤判。 為了滿足多路通信整機的小型化和穩定性要求， 必須生產低損耗高穩定磁心。上世紀 70 年代初，1409 所和四機部、郵電部各廠，從工藝上改變了推板空氣窯燒結，出窯后經真空罐冷卻的落后方式，改用真空爐，并控制燒結、冷卻氣氛。技術上采用共沉淀法攻關試制出了μQ乘積 60 萬和 100 萬的低損耗高穩定材料，在此基礎上，還實現了高μ7000～10000材料的突破，從而大大縮短了與國外企業的技術差異。當時正處于通信技術由FDM（頻率劃分調制）向PCM（脈沖編碼調制） 轉換時期， 日本人明石雅夫發表了μQ乘積125 萬為 0.8×10 ，100KHz）的超優鐵氧體材料<3>，其磁滯系數降為優鐵
上傳時間： 2014-12-24
上傳用戶：7891
The TRS232E is a dual driver/receiver that includes a capacitive voltage generator to supply TIA/RS-232-Fvoltage levels from a single 5-V supply. Each receiver converts TIA/RS-232-F inputs to 5-V TTL/CMOS levels.This receiver has a typical threshold of 1.3 V, a typical hysteresis of 0.5 V, and can accept ±30-V inputs. Eachdriver converts TTL/CMOS input levels into TIA/RS-232-F levels. The driver, receiver, and voltage-generatorfunctions are available as cells in the Texas Instruments LinASIC™ library.
上傳時間： 2013-10-07
上傳用戶：waitingfy
All inputs of the C16x family have Schmitt-Trigger input characteristics. These Schmitt-Triggers are intended to always provide proper internal low and high levels, even if anundefined voltage level (between TTL-VIL and TTL-VIH) is externally applied to the pin.The hysteresis of these inputs, however, is very small, and can not be properly used in anapplication to suppress signal noise, and to shape slow rising/falling input transitions.Thus, it must be taken care that rising/falling input signals pass the undefined area of theTTL-specification between VIL and VIH with a sufficient rise/fall time, as generally usualand specified for TTL components (e.g. 74LS series: gates 1V/us, clock inputs 20V/us).The effect of the implemented Schmitt-Trigger is that even if the input signal remains inthe undefined area, well defined low/high levels are generated internally. Note that allinput signals are evaluated at specific sample points (depending on the input and theperipheral function connected to it), at that signal transitions are detected if twoconsecutive samples show different levels. Thus, only the current level of an input signalat these sample points is relevant, that means, the necessary rise/fall times of the inputsignal is only dependant on the sample rate, that is the distance in time between twoconsecutive evaluation time points. If an input signal, for instance, is sampled throughsoftware every 10us, it is irrelevant, which input level would be seen between thesamples. Thus, it would be allowable for the signal to take 10us to pass through theundefined area. Due to the sample rate of 10us, it is assured that only one sample canoccur while the signal is within the undefined area, and no incorrect transition will bedetected. For inputs which are connected to a peripheral function, e.g. capture inputs, thesample rate is determined by the clock cycle of the peripheral unit. In the case of theCAPCOM unit this means a sample rate of 400ns @ 20MHz CPU clock. This requiresinput signals to pass through the undefined area within these 400ns in order to avoidmultiple capture events.For input signals, which do not provide the required rise/fall times, external circuitry mustbe used to shape the signal transitions.In the attached diagram, the effect of the sample rate is shown. The numbers 1 to 5 in thediagram represent possible sample points. Waveform a) shows the result if the inputsignal transition time through the undefined TTL-level area is less than the time distancebetween the sample points (sampling at 1, 2, 3, and 4). Waveform b) can be the result ifthe sampling is performed more than once within the undefined area (sampling at 1, 2, 5,3, and 4).Sample points:1. Evaluation of the signal clearly results in a low level2. Either a low or a high level can be sampled here. If low is sampled, no transition willbe detected. If the sample results in a high level, a transition is detected, and anappropriate action (e.g. capture) might take place.3. Evaluation here clearly results in a high level. If the previous sample 2) had alreadydetected a high, there is no change. If the previous sample 2) showed a low, atransition from low to high is detected now.
上傳時間： 2013-10-23
上傳用戶：copu
All inputs of the C16x family have Schmitt-Trigger input characteristics. These Schmitt-Triggers are intended to always provide proper internal low and high levels, even if anundefined voltage level (between TTL-VIL and TTL-VIH) is externally applied to the pin.The hysteresis of these inputs, however, is very small, and can not be properly used in anapplication to suppress signal noise, and to shape slow rising/falling input transitions.Thus, it must be taken care that rising/falling input signals pass the undefined area of theTTL-specification between VIL and VIH with a sufficient rise/fall time, as generally usualand specified for TTL components (e.g. 74LS series: gates 1V/us, clock inputs 20V/us).The effect of the implemented Schmitt-Trigger is that even if the input signal remains inthe undefined area, well defined low/high levels are generated internally. Note that allinput signals are evaluated at specific sample points (depending on the input and theperipheral function connected to it), at that signal transitions are detected if twoconsecutive samples show different levels. Thus, only the current level of an input signalat these sample points is relevant, that means, the necessary rise/fall times of the inputsignal is only dependant on the sample rate, that is the distance in time between twoconsecutive evaluation time points. If an input signal, for instance, is sampled throughsoftware every 10us, it is irrelevant, which input level would be seen between thesamples. Thus, it would be allowable for the signal to take 10us to pass through theundefined area. Due to the sample rate of 10us, it is assured that only one sample canoccur while the signal is within the undefined area, and no incorrect transition will bedetected. For inputs which are connected to a peripheral function, e.g. capture inputs, thesample rate is determined by the clock cycle of the peripheral unit. In the case of theCAPCOM unit this means a sample rate of 400ns @ 20MHz CPU clock. This requiresinput signals to pass through the undefined area within these 400ns in order to avoidmultiple capture events.
上傳時間： 2014-04-02
上傳用戶：han_zh
磁芯電感器的諧波失真分析 摘 要：簡述了改進鐵氧體軟磁材料比損耗系數和磁滯常數ηB，從而降低總諧波失真THD的歷史過程，分析了諸多因數對諧波測量的影響，提出了磁心性能的調控方向。 關鍵詞：比損耗系數， 磁滯常數ηB ，直流偏置特性DC-Bias，總諧波失真THD Analysis on THD of the fer rite co res u se d i n i nductancShi Yan Nanjing Finemag Technology Co. Ltd., Nanjing 210033 Abstract: Histrory of decreasing THD by improving the ratio loss coefficient and hysteresis constant of soft magnetic ferrite is briefly narrated. The effect of many factors which affect the harmonic wave testing is analysed. The way of improving the performance of ferrite cores is put forward. Key words: ratio loss coefficient，hysteresis constant，DC-Bias，THD 近年來，變壓器生產廠家和軟磁鐵氧體生產廠家，在電感器和變壓器產品的總諧波失真指標控制上，進行了深入的探討和廣泛的合作，逐步弄清了一些似是而非的問題。從工藝技術上采取了不少有效措施，促進了質量問題的迅速解決。本文將就此熱門話題作一些粗淺探討。 一、 歷史回顧 總諧波失真（Total harmonic distortion） ，簡稱THD，并不是什么新的概念，早在幾十年前的載波通信技術中就已有嚴格要求<1>。1978年郵電部公布的標準YD/Z17－78“載波用鐵氧體罐形磁心”中，規定了高μQ材料制作的無中心柱配對罐形磁心詳細的測試電路和方法。如圖一電路所示，利用LC組成的150KHz低通濾波器在高電平輸入的情況下測量磁心產生的非線性失真。這種相對比較的實用方法，專用于無中心柱配對罐形磁心的諧波衰耗測試。 這種磁心主要用于載波電報、電話設備的遙測振蕩器和線路放大器系統，其非線性失真有很嚴格的要求。 圖中 ZD —— QF867 型阻容式載頻振蕩器，輸出阻抗 150Ω， Ld47 —— 47KHz 低通濾波器，阻抗 150Ω，阻帶衰耗大于61dB， Lg88 ——并聯高低通濾波器，阻抗 150Ω，三次諧波衰耗大于61dB Ld88 ——并聯高低通濾波器，阻抗 150Ω，三次諧波衰耗大于61dB FD —— 30～50KHz 放大器， 阻抗 150Ω， 增益不小于 43 dB，三次諧波衰耗b3(0)≥91 dB, DP —— Qp373 選頻電平表，輸入高阻抗， L ——被測無心罐形磁心及線圈， C ——聚苯乙烯薄膜電容器CMO-100V-707APF±0.5%,二只。 測量時，所配用線圈應用絲包銅電磁線SQJ9×0.12(JB661-75)在直徑為16.1mm的線架上繞制 120 匝， （線架為一格） ， 其空心電感值為 318μH（誤差1％） 被測磁心配對安裝好后，先調節振蕩器頻率為 36.6～40KHz， 使輸出電平值為+17.4 dB， 即選頻表在 22′端子測得的主波電平 （P2）為+17.4 dB，然后在33′端子處測得輸出的三次諧波電平（P3）， 則三次諧波衰耗值為：b3(+2)= P2+S+ P3 式中：S 為放大器增益dB 從以往的資料引證， 就可以發現諧波失真的測量是一項很精細的工作，其中測量系統的高、低通濾波器，信號源和放大器本身的三次諧波衰耗控制很嚴，阻抗必須匹配，薄膜電容器的非線性也有相應要求。濾波器的電感全由不帶任何磁介質的大空心線圈繞成，以保證本身的“潔凈” ，不至于造成對磁心分選的誤判。 為了滿足多路通信整機的小型化和穩定性要求， 必須生產低損耗高穩定磁心。上世紀 70 年代初，1409 所和四機部、郵電部各廠，從工藝上改變了推板空氣窯燒結，出窯后經真空罐冷卻的落后方式，改用真空爐，并控制燒結、冷卻氣氛。技術上采用共沉淀法攻關試制出了μQ乘積 60 萬和 100 萬的低損耗高穩定材料，在此基礎上，還實現了高μ7000～10000材料的突破，從而大大縮短了與國外企業的技術差異。當時正處于通信技術由FDM（頻率劃分調制）向PCM（脈沖編碼調制） 轉換時期， 日本人明石雅夫發表了μQ乘積125 萬為 0.8×10 ，100KHz）的超優鐵氧體材料<3>，其磁滯系數降為優鐵
上傳時間： 2013-12-15
上傳用戶：天空說我在
int trace (int i, int j, int low, IMAGE im,IMAGE mag, IMAGE ori) float gauss(float x, float sigma) float dGauss (float x, float sigma) float meanGauss (float x, float sigma) void hysteresis (int high, int low, IMAGE im, IMAGE mag, IMAGE oriim) void canny (float s, IMAGE im, IMAGE mag, IMAGE ori)
上傳時間： 2015-01-30
上傳用戶：杜瑩12345
（1）變換模塊 本模塊包含兩部分內容：利用 反變換規則將 坐標系下的兩相電流轉換成三相電流；利用間接矢量控制，得到轉子角位移，公式如下（2） 電流滯環控制器(hysteresis current controller)模塊（3） 電壓源型逆變器(Voltage sourse inverter,VSI)模塊 （4） 變換模塊（5） 感應電機(IM)模塊 該感應電機模型是基于交流電機的電路方程、轉矩方程以及運動方程建立起來的。該仿真模塊為一個三輸入、六輸出的系統子模塊。輸入為 坐標系中定子電壓，輸出則是 坐標系中的轉子電流和轉子磁鏈，以及輸出的轉矩。（6） 電流反饋模塊（7）速度控制器模塊
上傳時間： 2014-03-10
上傳用戶：yy541071797
The PW2606B is a front-end over voltage and over current protection device. It achieves wide inputvoltage range from 2.5VDC to 40VDC. The over voltage threshold can be programmed externally orset to internal default setting. The low resistance of integrated power path nFET switch ensures betterperformance for battery charging system applications. It can deliver up to 1A current to satisfy thebattery supply system. It integrates the over-temperature protection shutdown and auto-recoverycircuit with hysteresis to protect against over current events
標簽： pw2606b
上傳時間： 2022-02-11
上傳用戶：
