The “bottom-line” metrics of cash flow, demand, price, and return on investment
are driven by a second set of financial metrics represented by value to the
customer, cost, and the pace of innovation. Get them right relative to competition
and impressive bottom-line results should follow. Because of their importance, we
call value to the customer, variable cost, and the pace of innovation the
“fundamental metrics.”
標簽：
Planning
Product
Systems
Driven
Value
and
上傳時間：
2020-06-06
上傳用戶：shancjb
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
標簽：
igbt
上傳時間：
2022-06-20
上傳用戶：wangshoupeng199
