ESD is a crucial factor for integrated circuits and influences their quality and reliability. Today increasingly sensitive processes with deep sub micron structures are developed. The integration of more and more functionality on a single chip and saving of chip area is required. Integrated circuits become more susceptible to ESD/EOS related damages. However, the requirements on ESD robustness especially for automotive applications are increasing. ESD failures are very often the reason for redesigns. Much research has been conducted by semiconductor manufacturers on ESD robust design.
標簽： Guidelines Design Basic ESD
上傳時間： 2020-06-05
上傳用戶：shancjb
As we enter the next millennium, there are clear technological patterns. First, the electronic industry continues to scale microelectronic structures to achieve faster devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI) continue to be a threat to these scaled structures. This dichotomy presents a dilemma for the scaling of semiconductor technologies and a future threat to new technologies. Technological advancements, material changes, design techniques, and simulation can fend off this growing concern – but to maintain this ever-threatening challenge, one must continue to establish research and education in this issue.
標簽： ESD-Phenomena-and-the-Reliability
上傳時間： 2020-06-05
上傳用戶：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
標簽： GaN-on-Si Displace and SiC Si
上傳時間： 2020-06-07
上傳用戶：shancjb
There have been many developments in the field of power electronics since the publication of the second edition, almost five years ago. Devices have become bigger and better - bigger silicon die, and current and voltage ratings. However, semiconductor devices have also become smaller and better, integrated circuit devices, that is. And the marriage of low power integrated circuit tecnology and high power semiconductors has resulted in benefit to both fields.
標簽： Electronics Handbook Edition Power
上傳時間： 2020-06-07
上傳用戶：shancjb
A power semiconductor module is basically a power circuit of different materials assembled together using hybrid technology, such as semiconduc- tor chip attachment, wire bonding, encapsulation, etc. The materials involved cover a wide range from insulators, conductors, and semiconduc- tors to organics and inorganics. Since these materials all behave differently under various environmental, electrical, and thermal stresses, proper selec- tion of these materials and the assembly processes are critical. In-depth knowledge of the material properties and the processing techniques is there- fore required to build a high-performance and highly reliable power module.
標簽： Manufacture Electronic Modules Design Power
上傳時間： 2020-06-07
上傳用戶：shancjb
Design for manufacturability and statistical design encompass a number of activities and areas of study spanning the integrated circuit design and manufacturing worlds. In the early days of the planar integrated circuit, it was typical for a handful of practitioners working on a particular design to have a fairly complete understanding of the manufacturing process, the resulting semiconductor active and passive devices, as well as the resulting circuit - often composed of as few as tens of devices. With the success of semiconductor scaling, predicted and - to a certain extent even driven - by Moore’s law, and the vastly increased complexity of modern nano-meter scale processes and the billion-device circuits they allow, there came a necessary separation between the various disciplines.
標簽： Manufacturability Statistical Design for and
上傳時間： 2020-06-10
上傳用戶：shancjb
半導體生產和過程控制的基礎 這是一本系統介紹芯片生產工藝基礎的好書，敘事嚴謹，條理清晰，值得一看
標簽： 芯片生產工藝
上傳時間： 2021-11-03
上傳用戶：
該資源是nordic semiconductor的官方給出的nrf52832芯片參考設計電路，里面包括原理圖（含天線），和PCB。很實用。
上傳時間： 2021-12-11
上傳用戶：
InGaAs/AlGaAs semiconductor lasers come in threetypes: VCSELs and two types of EELs. The VCSEL, asits name implies, emits vertically, normal to the planeof the device, owing to cavity mirrors grown withinthe epitaxial material itself. The VCSEL’s circular beamhas a numerical aperture (NA) of roughly 0.2, or a fullangle of approximately 25 degrees.
標簽： tof
上傳時間： 2022-02-12
上傳用戶：
在半導體制冷技術的工作性能及其優缺點研究的基礎上,設計了以單片機為核心控制元件,以TEC1-12706為執行元件的半導體制冷溫度控制系統。采用高精度分段式PID控制算法配合PWM輸出控制的方法實現溫度控制;選擇數字傳感器DS18B20為溫度檢測元件,還包含1602液晶顯示模塊、按鍵調整輸入模塊和H橋驅動模塊等。實際測試表明,該系統結構簡單易行,操作方便,工作性能優良,同時針對該系統專門設計的溫控算法,使半導體制冷器能更好地適應不同工況而充分發揮其制冷制熱工作特性。Based on the study of the performance and advantages and disadvantages of thermoelectric cooler(TEC)technology,a thermoelectric cooling temperature control system with single-chip microcomputer as the core control element and TEC1-12706 as the executive element was designed. High precision piecewise PID control algorithm combined with PWM output control method is adopted to realize temperature control. The digital sensor DS18B20 is selected as the temperature detection element. It also includes 1602 LCD module,key adjustment input module and H bridge drive module. The actual test shows that the system has simple structure,convenient operation and excellent performance. Meanwhile,the temperature control algorithm specially designed for the system can make the semiconductor cooler better adapt to different working conditions and give full play to its refrigeration and heating characteristics.
上傳時間： 2022-03-27
上傳用戶：
