?? t26a.ibs
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|***************************************************************************
| t26a.ibs * IBIS 4.0Model
| 256Mb x16 DDR SDRAM - Die Revision "F"
| Valid for DDR1-266/333/400 operation
|
| Models *_333 are applicable for speed grade 266/333 Mbps
| Models *_400 are applicable for speed grade 400 Mbps
|
| Part Number VDD/VDDQ Architecture Package
| MT46V16M16TG 2.5V/2.5V 16 Meg x 16 66-pin TSOP
| MT46V16M16FG 2.5V/2.5V 16 Meg x 16 60-ball FBGA
|***************************************************************************
|
[IBIS Ver] 4.0
[File name] t26a.ibs
[File rev] 2.1
[Date] 03/14/2007
[Source] From silicon level SPICE model at Micron Technology, Inc.
Micron Technology, Inc.
8000 S. Federal Way
P.O. Box 6, M/S: 01-711
Boise, ID 83707-0006
For support e-mail modelsupport@micron.com
|
[Notes] Model Revision History:
Rev 1.0: 03/24/2003
- initial file creation
Rev 2.0: 06/02/2004
- removed x4 and x8 packages from the model
- all models matched to latest silicon measurements
- typ temperature changed from 25C to 40C
- C_comp values updated for all models
- added Vinl and Vinh corners to all models
Rev 2.1: 03/14/2007
- added separate models for Clock and A12 signals
- updated all models to current design revision
- updated IBIS version to 4.0
- models for 266/333/400 Mbps included in the same file
- updated c_comp for input models
- added [receiver threshold] and overshoot/undershoot parameters
- IBIS spec does not support [receiver thresholds] declarations
for multiple differential models (i.e CLK), so they are commented
in this file. User may uncomment one of the [receiver thresholds]
related to either CLK_333 or CLK_400 as per requirement
|
|IQ SUMMARY Overall Quality of component and models Level 2b
|See Micron IBIS Model Quality Report for full IQ SUMMARY
|
[Disclaimer] This software code and all associated documentation, comments
or other information (collectively "Software") is provided
"AS IS" without warranty of any kind. MICRON TECHNOLOGY, INC.
("MTI") EXPRESSLY DISCLAIMS ALL WARRANTIES EXPRESS OR IMPLIED,
INCLUDING BUT NOT LIMITED TO, NONINFRINGEMENT OF THIRD PARTY
RIGHTS, AND ANY IMPLIED WARRANTIES OF MERCHANTABILITY OR
FITNESS FOR ANY PARTICULAR PURPOSE. MTI DOES NOT WARRANT THAT
THE SOFTWARE WILL MEET YOUR REQUIREMENTS, OR THAT THE
OPERATION OF THE SOFTWARE WILL BE UNINTERRUPTED OR ERROR-FREE.
FURTHERMORE, MTI DOES NOT MAKE ANY REPRESENTATIONS REGARDING
THE USE OR THE RESULTS OF THE USE OF THE SOFTWARE IN TERMS OF
ITS CORRECTNESS, ACCURACY, RELIABILITY, OR OTHERWISE. THE
ENTIRE RISK ARISING OUT OF USE OR PERFORMANCE OF THE SOFTWARE
REMAINS WITH YOU. IN NO EVENT SHALL MTI, ITS AFFILIATED
COMPANIES OR THEIR SUPPLIERS BE LIABLE FOR ANY DIRECT,
INDIRECT, CONSEQUENTIAL, INCIDENTAL, OR SPECIAL DAMAGES
(INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS,
BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF
YOUR USE OF OR INABILITY TO USE THE SOFTWARE, EVEN IF MTI HAS
BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Because some
jurisdictions prohibit the exclusion or limitation of
liability for consequential or incidental damages, the above
limitation may not apply to you.
|
[Copyright] Copyright 2007 Micron Technology, Inc. All Rights Reserved.
|
|***************************************************************************
| COMPONENT: MT46V16M16TG DDR SDRAM
|***************************************************************************
|
[Component] MT46V16M16TG
[Manufacturer] Micron Technology Inc.
[Package] | 66-pin TSOP
|variable typ min max
R_pkg 80.8m 66.8m 101.6m
L_pkg 5.40nH 4.27nH 6.68nH
C_pkg 1.06pF 0.72pF 1.32pF
|
|***************************************************************************
|
[Pin] signal_name model_name R_pin L_pin C_pin
|
1 VDD POWER 67.4m 4.79nH 1.85pF
2 DQ0 DQ 87.5m 6.59nH 1.29pF
3 VDDQ POWER 88.4m 6.53nH 1.30pF
4 DQ1 DQ 90.6m 6.46nH 1.19pF
5 DQ2 DQ 96.4m 6.21nH 1.10pF
6 VSSQ GND 103.1m 6.28nH NA
7 DQ3 DQ 101.6m 5.50nH 1.13pF
8 DQ4 DQ 94.2m 5.19nH 1.10pF
9 VDDQ POWER 84.9m 5.22nH 1.04pF
10 DQ5 DQ 88.7m 5.01nH 1.00pF
11 DQ6 DQ 87.5m 5.12nH 0.97pF
12 VSSQ GND 75.2m 4.56nH NA
13 DQ7 DQ 72.8m 4.61nH 0.89pF
14 NC NC
15 VDDQ POWER 76.9m 4.51nH 0.81pF
16 LDQS DQ 72.1m 4.46nH 0.78pF
17 NC NC
18 VDD POWER 58.0m 3.85nH 1.13pF
19 DNU NC
20 LDM DM 70.3m 4.57nH 0.83pF
21 WE# IN 69.2m 4.30nH 0.86pF
22 CAS# IN 73.0m 4.76nH 0.88pF
23 RAS# IN 75.0m 4.78nH 0.91pF
24 CS# IN 76.8m 4.56nH 0.96pF
25 NC NC
26 BA0 IN 86.2m 5.03nH 1.10pF
27 BA1 IN 93.2m 5.46nH 1.13pF
28 A10 IN 85.2m 5.82nH 1.18pF
29 A0 IN 79.9m 6.23nH 1.10pF
30 A1 IN 81.2m 6.05nH 1.18pF
31 A2 IN 86.4m 6.38nH 1.32pF
32 A3 IN 82.1m 6.35nH 1.26pF
33 VDD POWER 86.9m 5.00nH 1.85pF
34 VSS GND 64.1m 4.92nH NA
35 A4 IN 82.1m 6.65nH 1.27pF
36 A5 IN 86.4m 6.68nH 1.32pF
37 A6 IN 81.2m 6.35nH 1.18pF
38 A7 IN 79.9m 6.53nH 1.09pF
39 A8 IN 80.7m 5.94nH 1.18pF
40 A9 IN 80.0m 5.52nH 1.12pF
41 A11 IN 80.8m 5.36nH 1.09pF
42 A12 IN2 77.4m 4.61nH 1.05pF
43 NC NC
44 CKE IN 72.7m 4.68nH 0.91pF
45 CK CLK 71.2m 4.70nH 0.88pF
46 CK# CLK 68.9m 4.27nH 0.86pF
47 UDM DM 68.8m 4.32nH 0.82pF
48 VSS GND 61.1m 3.91nH NA
49 VREF POWER 63.7m 3.83nH 0.75pF
50 DNU NC
51 UDQS DQ 66.8m 4.35nH 0.72pF
52 VSSQ GND 68.7m 4.45nH NA
53 NC NC
54 DQ8 DQ 72.2m 4.49nH 0.91pF
55 VDDQ POWER 72.3m 4.45nH 0.93pF
56 DQ9 DQ 75.9m 4.88nH 0.97pF
57 DQ10 DQ 76.4m 4.89nH 1.00pF
58 VSSQ GND 80.4m 5.21nH NA
59 DQ11 DQ 86.0m 5.03nH 1.11pF
60 DQ12 DQ 86.5m 5.26nH 1.14pF
61 VDDQ POWER 87.4m 5.90nH 1.16pF
62 DQ13 DQ 86.6m 5.89nH 1.10pF
63 DQ14 DQ 78.2m 6.23nH 1.21pF
64 VSSQ GND 84.5m 6.21nH NA
65 DQ15 DQ 84.8m 6.65nH 1.31pF
66 VSS GND 70.1m 5.65nH NA
|
|**********************DIFF PIN*********************************************
[Diff_pin] inv_pin vdiff tdelay_typ tdelay_min tdelay_max
|
45 46 .360V 0ns NA NA
|
|***************************************************************************
| COMPONENT: MT46V16M16FG DDR SDRAM
|***************************************************************************
|
[Component] MT46V16M16FG
[Manufacturer] Micron Technology Inc.
[Package] | 60-ball FBGA
|variable typ min max
R_pkg 77.8m 42.3m 125.5m
L_pkg 2.57nH 1.29nH 4.29nH
C_pkg 0.57pF 0.29pF 0.87pF
|
|***************************************************************************
|
[Pin] signal_name model_name R_pin L_pin C_pin
|
A1 VSSQ GND 64.3m 2.19nH NA
A2 DQ15 DQ 122.8m 4.29nH 0.87pF
A3 VSS GND 60.0m 2.34nH NA
A7 VDD POWER 92.0m 2.80nH 0.66pF
A8 DQ0 DQ 109.5m 3.84nH 0.77pF
A9 VDDQ POWER 124.2m 3.92nH 0.99pF
B1 DQ14 DQ 46.5m 1.46nH 0.34pF
B2 VDDQ POWER 115.9m 3.69nH 0.87pF
B3 DQ13 DQ 74.2m 2.64nH 0.56pF
B7 DQ2 DQ 92.1m 3.21nH 0.67pF
B8 VSSQ GND 102.9m 3.19nH NA
B9 DQ1 DQ 48.3m 1.46nH 0.36pF
C1 DQ12 DQ 45.5m 1.38nH 0.35pF
C2 VSSQ GND 110.5m 3.59nH NA
C3 DQ11 DQ 74.9m 2.58nH 0.57pF
C7 DQ4 DQ 76.9m 2.80nH 0.57pF
C8 VDDQ POWER 121.4m 3.89nH 0.91pF
C9 DQ3 DQ 77.3m 2.32nH 0.55pF
D1 DQ10 DQ 42.3m 1.29nH 0.32pF
D2 VDDQ POWER 70.6m 2.33nH 0.55pF
D3 DQ9 DQ 91.8m 3.00nH 0.72pF
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