說明:1,測試交流電源(Test AC Power Supply):A.中國(China):AC 220V+/-2%50Hz+/-2%B.美國(United States of America):AC 120V+/-2%60Hz+/-2%。C.英國(Britain):AC 240V+/-2%50Hz+/-2%D.歐洲(Europe):AC 230V+/-2%50Hz+/-2%E.日本(Japan):AC 100V+/-2%60Hz+/-2%F.墨西哥(Mexico):AC 127V+/-2%60Hz+/-2%2,測試溫度條件(Test Temperature Conditions):25℃+/-2℃。3,測試以右聲道為準(Standard Test Use Right Channell)4,信號由AUX插座輸入(Signal From AUX Jack Input)。5,測試以音量最大,音調和平衡在中央位置(電子音調在正常狀態)。(Test Volume Setup Max,Equalizer And Balance Setup Center)。6,標準輸出(Standard Output):A.輸入1 KHz頻率信號(Input 1 KHz Frequency Signal)B.左右聲道輸入信號測試右聲道(L&R Input Signal Test Use R Channel)C.額定輸出功率満(Rating Output Power Full)10 W,標準輸出定為1w.(Rating Output Power Full 10 w,Standard Output Setup 1 W)D.額定輸出功率1W到10w,標準輸出定為500 mW(Rating Output Power 1 W To 10 W,Standard Output Setup 500 mW)E.額定輸出功率小于1w,標準輸出定為50 mW(Rating Output Power Not Full 1 W,Standard Output Setup 50 mW)F.標準輸出電壓以V-VPR為準(Standard Output Voltage Use V-V/PR)。G.V-V/PR中P為額定輸出功率,R為喇叭標稱阻抗。
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)