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Collector

  • A garbage Collector for C and C

    A garbage Collector for C and C

    標簽: Collector garbage and for

    上傳時間: 2015-10-09

    上傳用戶:Divine

  • WIRELESS SENSOR NETWORKS Environmental Sensor Application of Rain Collector II with CrossBow Techn

    WIRELESS SENSOR NETWORKS Environmental Sensor Application of Rain Collector II with CrossBow Technology

    標簽: Environmental Application Collector WIRELESS

    上傳時間: 2014-01-27

    上傳用戶:稀世之寶039

  • Driver Collector e book very useful one.

    Driver Collector e book very useful one.

    標簽: Collector Driver useful book

    上傳時間: 2014-01-17

    上傳用戶:jackgao

  • 74LS47.pdf

    英文描述: BCD to 7-Segment Decoder/Driver with Open-Collector Outputs 中文描述: BCD碼到7段解碼器/驅動器,集電極開路輸出

    標簽: 74 47 LS

    上傳時間: 2013-07-14

    上傳用戶:m62383408

  • 交流瓦特/瓦特小時,乏爾/乏爾小時轉換器

    交流瓦特/瓦特小時,乏爾/乏爾小時轉換器 特點: 精確度0.25%滿刻度 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測試5仟伏特(1.2x50us) 突波電壓測試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小,穩定性高 主要規格: 精確度: 0.25% F.S. (23 ±5℃) 輸入負載: <0.2VA (Voltage) <0.2VA (Current) 最大過載能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 輸出反應速度: < 250ms(0~90%) 輸出負載能力: < 10mA for voltage mode < 10V for current mode 輸出之漣波 : < 0.1% F.S. 脈波輸出型態: Photocouple of open Collector (max.30V/40mA) 歸零調整范圍: 0~±5% F.S. 最大值調整范圍: 0~±10% F.S. 溫度系數: 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣阻抗: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power/case) 突波測試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用環境條件: -20~60℃(20 to 90% RH non-condensed) 存放環境條件: -30~70℃(20 to 90% RH non-condensed) CE認證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001

    標簽: 瓦特 交流 轉換器

    上傳時間: 2013-11-11

    上傳用戶:wettetw

  • The Art of C++ by Herbert Schildt ISBN:0072255129 McGraw-Hill/Osborne © 2004 The author of

    The Art of C++ by Herbert Schildt ISBN:0072255129 McGraw-Hill/Osborne © 2004 The author of this text applies C++ to a wide variety of high-powered, practical applications, each focusing on a different aspect of the language. Examples range from a garbage Collector subsystem and a thread control panel to AI-based searches and more.

    標簽: McGraw-Hill 0072255129 The Herbert

    上傳時間: 2015-07-18

    上傳用戶:lx9076

  • C-Talk is interpreted scripting language with C-like syntax and dynamic type checking. Variables in

    C-Talk is interpreted scripting language with C-like syntax and dynamic type checking. Variables in C-Talk have no type. So there is no compile time type checking in C-Talk, all checking is performed at runtime. To preserve reference integrity, explicit memory deallocation is prohibited in C-Talk, unused objects are automatically deallocated by garbage Collector.

    標簽: interpreted Variables scripting checking

    上傳時間: 2015-08-18

    上傳用戶:王者A

  • 學習JAVA的三十個基本概念目前Java主要應用于中間件的開發(middleware)---處理客戶機于服務器之間的通信技術,早期的實踐證明,Java不適合pc應用程序的開發,其發展逐漸變成在開發手持

    學習JAVA的三十個基本概念目前Java主要應用于中間件的開發(middleware)---處理客戶機于服務器之間的通信技術,早期的實踐證明,Java不適合pc應用程序的開發,其發展逐漸變成在開發手持設備,互聯網信息站,及車載計算機的開發.Java于其他語言所不同的是程序運行時提供了平臺的獨立性,稱許可以在windows,solaris,linux其他操作系統上使用完全相同的代碼.Java的語法與C++語法類似,C++/C程序員很容易掌握,而且Java是完全的徹底的面向對象的,其中提出了很好的GC(Garbage Collector)垃圾處理機制,防止內存溢出。

    標簽: Java middleware JAVA 基本概念

    上傳時間: 2013-12-26

    上傳用戶:hgy9473

  • I2C driver for PIC, PICC compiler - bitbanged. Needs pull-up resistor on SCK and SDA and ports set f

    I2C driver for PIC, PICC compiler - bitbanged. Needs pull-up resistor on SCK and SDA and ports set for open Collector

    標簽: bitbanged and compiler resistor

    上傳時間: 2017-07-01

    上傳用戶:yzhl1988

  • IGBT圖解

    le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated Collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive Collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the Collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)

    標簽: igbt

    上傳時間: 2022-06-20

    上傳用戶:wangshoupeng199

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