If register should be written or read.This value is passed to the calback functions which support either reading or writing register values. Writing means that the application registers should be updated and reading means that the modbus protocol stack needs to know the Current register values.See also: eMBRegHoldingCB(), eMBRegCoilsCB(), eMBRegDiscreteCB() and eMBReglnputCB().Enumeration values: MB_REG_READ Read register values and pass to protocol stack.MB_REG_WRITE Update register values.Note: Note all ports implement this function.A port which wants to get an callback must define the macro MB_PORT_HAS_CLOSE to 1.Returns: If the resources where released it return eMBErrorCode:: MB_ENOERR. If the protocol stack is not in the disabled state it returns eMBErrorCode:: MB_EILLSTATE.Examples: LINUX/demo.c, MCF5235TCP/demo.c, STR71XTCP/demo.c, WIN32/demo. cpp, and WIN32TCP/demo. cpp.his function disables processing of Modbus frames.Returns: If the protocol stack has been disabled
標(biāo)簽： FreeModbus
上傳時(shí)間： 2022-05-31
上傳用戶(hù)：
#include "NUC1xx.h"#include "Hal.h"#include "pwm.h"//wait Current PWM cycle done, otherwise there maybe short pulse on FETvoid PWM_Stop(U8 ch){ switch(ch) { case PWM_CHANNEL_A: PWMA->u32CNR1 = 0; PWMA->u32CMR1 = 0; while(PWMA->u32PDR1 != 0); break; case PWM_CHANNEL_B: PWMA->u32CNR2 = 0; PWMA->u32CMR2 = 0; while(PWMA->u32PDR2 != 0); break; case PWM_CHANNEL_C: PWMA->u32CNR3 = 0; PWMA->u32CMR3 = 0; while(PWMA->u32PDR3 != 0); break; default: while(1); } PWMA->u32POE &= ~(1<<ch); PWMA->u32PCR &= ~(1<<(ch*8));}
上傳時(shí)間： 2022-06-01
上傳用戶(hù)：kingwide
RX-8801 SA Features built-in 32.768 kHz DTCXO, High Stability Supports l'C-Bus's high speed mode (400 kHz)Alarm interrupt function for day, date, hour, and minute settings Fixed-cycle timer interrupt function Time update interrupt function32.768 kHz output with OE function Auto correction of leap years Wide interface voltage range: 2.2 V to 5.5 V Wide time-keeping voltage range:1.8 V to 5.5 V Low Current consumption: 0.84A/3V (Typ.)is an IC bus interface-compliant real-time clock which includes a 32.768 kHz DTCXO In addition to providing a calendar (year, month, date, day, hour, minute, second) function and a clock counter function, this module provides an abundance of other functions including an alarm function, fixed-cycle timer unction, time update interrupt function, and 32.768 kHz output function.The devices in this module are fabricated via a C-MOS process for low Current consumption, which enables ong-term battery back-up.
上傳時(shí)間： 2022-06-17
上傳用戶(hù)：
DescriptionThe IMX385LQR-C is a diagonal 8.35 mm (Type 1/2) CMOS active pixel type solid-state image sensor with a squarepixel array and 2.13 M effective pixels. This chip operates with analog 3.3 V, digital 1.2 V, and interface 1.8 V triplepower supply, and has low power consumption. High sensitivity, low dark Current and no smear are achieved throughthe adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variablecharge-integration time.(Applications: Surveillance cameras)
標(biāo)簽： CMOS傳感器 IMX385LQR-C
上傳時(shí)間： 2022-06-18
上傳用戶(hù)：
sony CMOS傳感器datasheet，IMX178LQJ-C_Data_SheetDescriptionThe IMX178LQJ-C is a diagonal 8.92 mm (Type 1/1.8) CMOS active pixel type image sensor with a square pixelarray and 6.44 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V and interface 1.8 V triple powersupply, and has low power consumption.High sensitivity, low dark Current and no smear are achieved through the adoption of R, G and B primary colormosaic filters.This chip features an electronic shutter with variable charge-integration time.(Applications: Surveillance cameras, FA cameras, Industrial cameras)
標(biāo)簽： CMOS傳感器 IMX178LQJ-C
上傳時(shí)間： 2022-06-18
上傳用戶(hù)：
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel Current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector Current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base Current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron Current (base Current, le, of pnp transistor)
標(biāo)簽： igbt
上傳時(shí)間： 2022-06-20
上傳用戶(hù)：wangshoupeng199
摘要：本文在分析1GBT的動(dòng)態(tài)開(kāi)關(guān)特性和過(guò)流狀態(tài)下的電氣特性的基礎(chǔ)上，通過(guò)對(duì)常規(guī)的IGBT推挽驅(qū)動(dòng)電路進(jìn)行改進(jìn)，得到了具有良好過(guò)流保護(hù)特性的IGBT驅(qū)動(dòng)電路。該電路簡(jiǎn)單，可靠，易用，配合DSP等控制芯片能達(dá)到很好的驅(qū)動(dòng)效果Abstract：Based on the studies on the dynamic switching and over-Current characteristics of IGBT，this paper makes some improvments to the original push-pull driving circuit，obtains a new IGBT driving circuit which has a good over-Current protection function.The circuit is simple，reliable and easy to use.Combined with controlling chips such as DSP it will do a great job in driving applications.關(guān)鍵詞：IBGT：開(kāi)關(guān)特性；驅(qū)動(dòng)；過(guò)流保護(hù)；Key Words:IGBT；switching characteristics；driving:over-Current protection
標(biāo)簽： 分立元件 igbt 驅(qū)動(dòng)電路
上傳時(shí)間： 2022-06-21
上傳用戶(hù)：
本文以感應(yīng)加熱電源為研究對(duì)象，闡述了感應(yīng)加熱電源的基本原理及其發(fā)展趨勢(shì)。對(duì)感應(yīng)加熱電源常用的兩種拓?fù)浣Y(jié)構(gòu)-電流型逆變器和電壓型逆變器做了比較分析，并分析了感應(yīng)加熱電源的各種調(diào)功方式。在對(duì)比幾種功率調(diào)節(jié)方式的基礎(chǔ)上，得出在整流側(cè)調(diào)功有利于高頻感應(yīng)加熱電源頻率和功率的提高的結(jié)論，選擇了不控整流加軟斬波器調(diào)功的感應(yīng)加熱電源作為研究對(duì)象，針對(duì)傳統(tǒng)硬斬波調(diào)功式感應(yīng)加熱電源功率損耗大的缺點(diǎn)，采用軟斬波調(diào)功方式，設(shè)計(jì)了一種零電流開(kāi)關(guān)準(zhǔn)諾振變換器ZCS-QRCs（Zero-Current-switching-Quasi-resonant）倍頻式串聯(lián) 振高頻感應(yīng)加熱電源。介紹了該軟斬波調(diào)功器的組成結(jié)構(gòu)及其工作原理，通過(guò)仿真和實(shí)驗(yàn)的方法研究了該軟斬波器的性能，從而得出該軟斬波器非常適合大功率高頻感應(yīng)加熱電源應(yīng)用場(chǎng)合的結(jié)論。同時(shí)設(shè)計(jì)了功率閉環(huán)控制系統(tǒng)和PI功率調(diào)節(jié)器，將感應(yīng)加熱電源的功率控制問(wèn)題轉(zhuǎn)化為Buck斬波器的電壓控制問(wèn)題。針對(duì)目前IGBT器件頻率較低的實(shí)際情況，本文提出了一種新的逆變拓?fù)?通過(guò)IGBT的并聯(lián)來(lái)實(shí)現(xiàn)倍頻，從而在保證感應(yīng)加熱電源大功率的前提下提高了其工作頻率，并在分析其工作原理的基礎(chǔ)上進(jìn)行了仿真，驗(yàn)證了理論分析的正確性，達(dá)到了預(yù)期的效果。另外，本文還設(shè)計(jì)了數(shù)字鎖相環(huán)（DPLL），使逆變器始終保持在功率因數(shù)近似為1的狀態(tài)下工作，實(shí)現(xiàn)電源的高效運(yùn)行。最后，分析并設(shè)計(jì)了1GBT的緩沖吸收電路。本文第五章設(shè)計(jì)了一臺(tái)150kHz，10KW的倍頻式感應(yīng)加熱電源實(shí)驗(yàn)樣機(jī)，其中斬波器頻率為20kHz，逆變器工作頻率為150kHz（每個(gè)IGBT工作頻率為75kHz），控制孩心采用TI公司的TMS320F2812 DSP控制芯片，簡(jiǎn)化了系統(tǒng)結(jié)構(gòu)。實(shí)驗(yàn)結(jié)果表明，該倍頻式感應(yīng)加熱電源實(shí)現(xiàn)了斬波器和逆變器功率器件的軟開(kāi)關(guān)，有效的減小了開(kāi)關(guān)損耗，并實(shí)現(xiàn)了數(shù)字化，提高了整機(jī)效率。文章給出了整機(jī)的結(jié)構(gòu)設(shè)計(jì)，直流斬波部分控制框圖，逆變控制框圖，驅(qū)動(dòng)電路的設(shè)計(jì)和保護(hù)電路的設(shè)計(jì)。同時(shí)，給出了關(guān)鍵電路的仿真和實(shí)驗(yàn)波形。
上傳時(shí)間： 2022-06-22
上傳用戶(hù)：
文章首先闡述了整個(gè)方案的工作原理，給出LDO設(shè)計(jì)的指標(biāo)要求；其次，依據(jù)系統(tǒng)方案的指標(biāo)要求和制造1藝約束，實(shí)現(xiàn)包含誤差放大器、基準(zhǔn)源和保護(hù)電路等了模塊在內(nèi)的電壓調(diào)整器：此外，文章還著重探討了“如何利用放大器驅(qū)動(dòng)100pF數(shù)量級(jí)的大電容負(fù)載"的問(wèn)題；最后，給出整個(gè)模塊總體電路的仿真驗(yàn)證結(jié)果。LDO的架構(gòu)分析和設(shè)計(jì)以及基準(zhǔn)源的設(shè)計(jì)是本文的核心內(nèi)容。在LDO架構(gòu)設(shè)計(jì)部分，文章基于對(duì)三種不同LDO拓?fù)涞姆治觯x擇并實(shí)現(xiàn)了含緩沖器級(jí)的LDO./設(shè)計(jì)中通過(guò)改進(jìn)反饋網(wǎng)絡(luò)，采用反饋電容，實(shí)現(xiàn)對(duì)LDO的環(huán)路補(bǔ)償。同時(shí)，為提高誤差放大器驅(qū)動(dòng)功率管的能力、適應(yīng)LDO低功耗發(fā)展的需求，文章探討了如何使用放大器驅(qū)動(dòng)大負(fù)載電容的問(wèn)題，基于密勒定理和根軌跡原理，本文通過(guò)研究密勒電容的作用，采用MPC（Miller-Path-Compersation）結(jié)構(gòu)，實(shí)踐了兩級(jí)放大器驅(qū)動(dòng)大負(fù)載電容的方案，并把MPC補(bǔ)償技術(shù)推廣到三級(jí)放大器的設(shè)計(jì)中。文章設(shè)計(jì)的CRF（CRF：Current Re ference controlled by Feedback）電流基準(zhǔn)是基于對(duì)傳統(tǒng)自啟動(dòng)基準(zhǔn)電流源的改進(jìn)實(shí)現(xiàn)的。CRF基準(zhǔn)電流源架構(gòu)中存在一條阻性的電流道路，確保其在加載電源電壓的過(guò)程中能夠?qū)崿F(xiàn)快速啟動(dòng)，響應(yīng)速度達(dá)到1ps：而傳統(tǒng)自啟動(dòng)基準(zhǔn)電流源在相同的設(shè)計(jì)參數(shù)下，響應(yīng)速度長(zhǎng)達(dá)120us.CRF基準(zhǔn)電流源突破了響應(yīng)速度對(duì)其應(yīng)用的限制。
上傳時(shí)間： 2022-06-23
上傳用戶(hù)：
開(kāi)關(guān)升壓型鋰電池充電管理芯片F(xiàn)LD5302/3概述 為開(kāi)關(guān)型兩節(jié)或三節(jié)鋰離子/鋰 聚合物電池充電管理芯片，非常適合于便攜 式設(shè)備的充電管理應(yīng)用。 集電壓和電 流調(diào)節(jié)器、預(yù)充、充電狀態(tài)指示和充電截止 適配器自適應(yīng)等功能于一體，采用 SOP-8 封裝。 對(duì)電池充電分為三個(gè)階段：預(yù) 充（ Pre-charge ）、恒流（CC/Constant Current）、恒壓（CV/Constant Voltage）過(guò)程。 集成過(guò)壓及過(guò)流保護(hù)，確保電芯的 安全。
上傳時(shí)間： 2022-06-25
上傳用戶(hù)：
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