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Dispersive

  • Orthogonal Time–Frequency Signalin Over Doubly Dispersive Channels

    Orthogonal Time–Frequency Signalin Over Doubly Dispersive Channels,IEEE上的文章

    標(biāo)簽: Orthogonal Dispersive Frequency Channels

    上傳時(shí)間: 2014-01-22

    上傳用戶:xg262122

  • Characterization of wall Dispersive and attenuative effects on UWB radar signals

    Characterization of wall Dispersive and attenuative effects on UWB radar signals

    標(biāo)簽: Characterization attenuative Dispersive effects

    上傳時(shí)間: 2014-01-10

    上傳用戶:luopoguixiong

  • 一種改進(jìn)的簡(jiǎn)單的電纜仿真模型

    Abstract: Nonideal cable Dispersive effects can affect system performance. This application note discusses the twomain loss effects related to cables (skin-effect and dielectric losses), and presents a simple method of modeling thecable for use in standard SPICE simulators.

    標(biāo)簽: 電纜仿真 模型

    上傳時(shí)間: 2014-11-18

    上傳用戶:wxnumen

  • Time-Varying Channels

    Wireless communications has become a field of enormous scientific and economic interest. Recent success stories include 2G and 3G cellular voice and data services (e.g., GSM and UMTS), wireless local area networks (WiFi/IEEE 802.11x), wireless broadband access (WiMAX/IEEE 802.16x), and digital broadcast systems (DVB, DAB, DRM). On the physical layer side, traditional designs typically assume that the radio channel remains constant for the duration of a data block. However, researchers and system designers are increasingly shifting their attention to channels that may vary within a block. In addition to time dispersion caused by multipath propagation, these rapidly time-varying channels feature frequency dispersion resulting from the Doppler effect. They are, thus, often referred to as being “doubly Dispersive.”

    標(biāo)簽: Time-Varying Channels

    上傳時(shí)間: 2020-06-01

    上傳用戶:shancjb

  • IGBT失效分析技術(shù)

    近年來(lái),對(duì)器件的失效分析已經(jīng)成為電力電子領(lǐng)域中一個(gè)研究熱點(diǎn)。本論文基于現(xiàn)代電力電子裝置中應(yīng)用最廣的IGBT器件,利用靜態(tài)測(cè)試儀3716,SEM(Scanning Electrom Microscope,掃描電子顯微鏡)、EDX(Energy Dispersive X-Ray Spectroscopy、能量色散x射線光譜儀)、FIB(Focused lon beam,聚焦高子束)切割、TEM(Thermal Emmision Microscope,高精度熱成像分析儀)等多種分析手段對(duì)模塊應(yīng)用當(dāng)中失效的1GBT芯片進(jìn)行電特性分析、芯片解剖并完成失效分析,并基于相應(yīng)的失效模式提出了封裝改進(jìn)方案。1,對(duì)于柵極失效的情況,本論文先經(jīng)過(guò)電特性測(cè)試完成預(yù)分析,并利用THEMOS分析出柵極漏電流通路,找到最小點(diǎn)并進(jìn)行失效原因分析,針對(duì)相應(yīng)原因提出改進(jìn)方案。2,針對(duì)開(kāi)通與關(guān)斷瞬態(tài)過(guò)電流失效,采用研磨、劃片等手段進(jìn)行芯片的解剖。并用SEM與EDX對(duì)芯片損傷程度進(jìn)行評(píng)估分析,以文獻(xiàn)為參考進(jìn)行失效原因分析,利用saber仿真進(jìn)行失效原因驗(yàn)證。3,針對(duì)通態(tài)過(guò)電流失效模式,采用解剖分析來(lái)評(píng)估損傷情況,探究失效原因,并采用電感鉗位電路進(jìn)行實(shí)驗(yàn)驗(yàn)證。4,針對(duì)過(guò)電壓失效模式,采用芯片解剖方式來(lái)分析失效點(diǎn)以及失效情況,基于文獻(xiàn)歸納并總結(jié)出傳統(tǒng)失效原因,并通過(guò)大量實(shí)驗(yàn)得出基于封裝的失效原因,最后采用saber仿真加以驗(yàn)證。

    標(biāo)簽: igbt

    上傳時(shí)間: 2022-06-21

    上傳用戶:1208020161

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