Mosfet Power Loss
Mosfet Power Loss詳細(xì)計算公式...
MOSFET Power Loss技術(shù)資料
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優(yōu)化輸電線路 精確測量電壓駐波比(VSWR)
Abstract: Impedance mismatches in a radio-frequency (RF) electrical transmission line cause power ...
PW1555-2.0.pdf規(guī)格書
PW1555 is a programmable current limit switch with input voltage range selection and outputvoltage c...
CR6221 Current Mode PWM Power Switch
CR6221 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is opti...
CR6228 Current Mode PWM Power Switch
CR6228 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is opti...
實際應(yīng)用條件下Power+MOSFET開關(guān)特性研究
摘要：從功率MOSFET內(nèi)部結(jié)構(gòu)和極間電容的電壓依賴關(guān)系出發(fā)，對功率MOSFET的開關(guān)現(xiàn)象及其原因進(jìn)行了較深入分析。從實際應(yīng)用的角度，對功率MOSFET開關(guān)過程的功率損耗和所需驅(qū)動功率進(jìn)行了研究，提出...
Line+Loss+Analysis
It has been over a decade since the Chinese publication of Line Loss in Electric Power Systems. To k...
Parallel Power Electronics Filters
Power Electronics is one of modern and key technologies in Electrical and Electronics Engineering fo...
MOSFET開關(guān)過程的研究及米勒平臺振蕩的抑制
設(shè)計功率MOSFET驅(qū)動電路時需重點考慮寄生參數(shù)對電路的影響。米勒電容作為MOSFET器件的一項重要參數(shù),在驅(qū)動電路的設(shè)計時需要重點關(guān)注。重點觀察了MOSFET的開通和關(guān)斷過程中柵極電壓、漏源極電壓和...
MOSFET和IGBT區(qū)別
MOSFET和IGBT內(nèi)部結(jié)構(gòu)不同, 決定了其應(yīng)用領(lǐng)域的不同.1, 由于MOSFET的結(jié)構(gòu), 通常它可以做到電流很大, 可以到上KA,但是前提耐壓能力沒有IGBT強(qiáng)。2,IGBT 可以做很大功率, 電...