These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad
These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad...
These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad...
AEC-Q100 qualified ? 12 V and 24 V battery systems compliance ? 3.3 V and 5 V logic compatible I/O ?...
Capacity and Random-Coding Exponents for Channel Coding with Side Information (P.moulin關(guān)于信息隱藏容量的論文...
Program to simulate Rayleigh fading using a p-th order autoregressive model AR(p) according to % B...
The Capacity of a MIMO channel with nt transmit antenna and nr recieve antenna is analyzed. The p...
化學(xué)[手冊]_《化學(xué)工程師簡明手冊》鄧忠等[p]...
海爾29F3A-P...
專輯類-機(jī)械五金類專輯-84冊-3.02G 化學(xué)[手冊]_《化學(xué)工程師簡明手冊》鄧忠等[p].pdf...
[信號與系統(tǒng)(全美經(jīng)典學(xué)習(xí)指導(dǎo)系列)].(美)Hwei.P.Hsu.掃描版 很清晰,經(jīng)典教材...
在理論模型的基礎(chǔ)上探討了電子勢壘的形狀以及勢壘形狀隨外加電壓的變化, 并進(jìn)行定量計(jì)算, 得出隧穿電壓隨雜質(zhì)摻雜濃度的變化規(guī)律。所得結(jié)論與硅、鍺p-n 結(jié)實(shí)驗(yàn)數(shù)據(jù)相吻合, 證明了所建立的理論模型在定量 ...