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60個(gè)Android開發(fā)精典案例 Android軟件源碼

60個(gè)Android開發(fā)精典案例 Android軟件源碼:2-1(Activity生命周期)3-1(Button與點(diǎn)擊監(jiān)聽器)3-10-1(列表之ArrayAdapter適配)3-10-2(列表之SimpleAdapter適配)3-11(Dialog對話框)3-12-5(Activity跳轉(zhuǎn)與操作)3-12-6(橫豎屏切換處理)3-3(ImageButton圖片按鈕)3-4(EditText文本編輯)3-5(CheckBox與監(jiān)聽)3-6(RadioButton與監(jiān)聽)3-7(ProgressBar進(jìn)度條)3-8(SeekBar 拖動(dòng)條)3-9(Tab分頁式菜單)4-10(可視區(qū)域)4-11-1(Animation動(dòng)畫)4-11-2-1(動(dòng)態(tài)位圖)4-11-2-2(幀動(dòng)畫)4-11-2-3(剪切圖動(dòng)畫)4-13(操作游戲主角)4-14-1(矩形碰撞)4-14-2(圓形碰撞)4-14-4(多矩形碰撞)4-14-5(Region碰撞檢測)4-15-1(MediaPlayer音樂)4-15-2(SoundPool音效)4-16-1(游戲保存之SharedPreference)4-16-2(游戲保存之Stream)4-3(View游戲框架)4-4(SurfaceView游戲框架)4-7-1(貝塞爾曲線)4-7-2(Canvas畫布)4-8(Paint畫筆)4-9(Bitmap位圖渲染與操作)5-1(飛行射擊游戲?qū)崙?zhàn))6-1(360°平滑游戲搖桿)6-10-1(Socket協(xié)議)6-10-2(Http協(xié)議)6-11(本地化與國際化)6-2(多觸點(diǎn)縮放位圖)6-3(觸屏手勢識別)6-4(加速度傳感器)6-5(9patch工具)]6-6(截屏)6-8(游戲視圖與系統(tǒng)組件)6-9(藍(lán)牙對戰(zhàn)游戲)7-10-1(遍歷Body)7-10-2(Body的m_userData)7-11(為Body施加力)7-12(Body碰撞監(jiān)聽)7-13-1(距離關(guān)節(jié))7-13-2(旋轉(zhuǎn)關(guān)節(jié))7-13-3(齒輪關(guān)節(jié))7-13-4(滑輪關(guān)節(jié))7-13-5-1(通過移動(dòng)關(guān)節(jié)移動(dòng)Body)7-13-5-2(通過移動(dòng)關(guān)節(jié)綁定兩個(gè)Body動(dòng)作)7-13-6(鼠標(biāo)關(guān)節(jié)-拖拽Body)7-14(AABB獲取Body)7-4(Box2d物理世界)7-5在物理世界中添加矩形)7-7(添加自定義多邊形)7-9(在物理世界中添加圓形)8-1(迷宮小球)8-2(堆房子)

標(biāo)簽： android

上傳時(shí)間： 2021-11-30

上傳用戶：trh505
IGBT圖解

le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift Region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)

標(biāo)簽： igbt

上傳時(shí)間： 2022-06-20

上傳用戶：wangshoupeng199

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