The next-generation wireless broadband technology is changing the way
we work, live, learn, and communicate through effective use of state-
of-the-art mobile broadband technology. The packet-data-based revolu-
tion started around 2000 with the introduction of 1x Evolved Data Only
(1xEV-DO) and 1x Evolved Data Voice (1xEV-DV) in 3GPP2 and High
Speed Downlink Packet Access (HSDPA) in 3GPP. The wireless broad-
band fourth-generation technology (4G) is an evolution of the packet-
based 3G system and provides a comprehensive evolution of the
Universal Mobile Telecommunications System SPECIFICATIONs so as to
remain competitive with other broadband systems such as 802.16e
(WiMAX)
The aim of this book is to give an integrated presentation of the
SPECIFICATIONs for Long Term Evolution (LTE) and LTE Advanced radio
interfaces, so that the reader can gain an overview of their main
characteristics.
The single-carrier frequency division multiple access (SC-FDMA)
system is a well-known system that has recently become a preferred
choice for mobile uplink channels. This is attributed to its advantages
such as the low peak-to-average power ratio (PAPR) and the use of
frequency domain equalizers. Low PAPR allows the system to relax
the SPECIFICATIONs of linearity in the power amplifier of the mobile
terminal, which reduces cost and power consumption.
When 3GPP started standardizing the IMS a few years ago, most analysts expected the
number of IMS deploymentsto grow dramatically as soon the initial IMS SPECIFICATIONs were
ready (3GPP Release 5 was functionallyfrozenin the first half of 2002and completedshortly
after that). While those predictions have proven to be too aggressive owing to a number of
upheavals hitting the ICT (Information and Communications Technologies) sector, we are
now seeing more and more commercial IMS-based service offerings in the market. At the
time of writing (May 2008), there are over 30 commercial IMS networks running live traffic,
addingup to over10million IMS users aroundthe world; the IMS is beingdeployedglobally.
In addition, there are plenty of ongoing market activities; it is estimated that over 130 IMS
contracts have been awarded to all IMS manufacturers. The number of IMS users will grow
substantially as these awarded contracts are launched commercially. At the same time, the
number of IMS users in presently deployed networks is steadily increasing as new services
are introduced and operators running these networks migrate their non-IMS users to their
IMS networks.
Thanks to the advances in micromachining fabrication technologies and significant
cost reduction due to mass production, miniature sensors of angular rate, or
gyroscopes, found their way into the everyday life of every user of modern gadgets,
such as smart phones, tablets or even wristwatches. Often without realising, many
of us are carrying in our pockets fully equipped with all necessary sensors complete
inertial navigation systems that not so long ago were available only for advanced
vehicles in sea, land, air or space. Accelerometers and gyroscopes are found in
SPECIFICATIONs of any gadget supposed to react to user movements. And one of the
most commonly used type of gyroscopes used to developed these systems is
Coriolis vibratory gyroscope (CVG).
GaN is an already well implanted semiconductor
technology, widely diffused in the LED optoelectronics
industry. For about 10 years, GaN devices have also been
developed for RF wireless applications where they can
replace Silicon transistors in some selected systems. That
incursion in the RF field has open the door to the power
switching capability in the lower frequency range and
thus to the power electronic applications.
Compared to Silicon, GaN exhibits largely better figures
for most of the key SPECIFICATIONs: Electric field, energy
gap, electron mobility and melting point. Intrinsically,
GaN could offer better performance than Silicon in
terms of: breakdown voltage, switching frequency and
Overall systems efficiency.
The PW4055 is a complete constant-current /constant-voltage linear charger for single cell lithiumion batteries.Its ThinSOT package and low external component count make the PW4055 ideallysuited for portable applications.Furthermore, the PW4055 is specifically designed to work within USBpower SPECIFICATIONs.The PW4055 No external sense resistor is needed, and no blocking diode is required due to theinternal MOSFET architecture.Thermal feedback regulates the charge current to limit the dietemperature during high power operation or high ambient temperature. The charge voltage is fixedat 4.2V, and the charge current can be programmed externally with a single resistor. The PW4055automatically terminates the charge cycle when the charge current drops to 1/10th the programmedvalue after the final float voltage is reached. When the input supply (wall adapter or USB supply) isremoved, the PW4055 automatically enters a low current state, dropping the battery drain currentto less than 2μA. The PW4055 can be put into shutdown mode, reducing the supply current to 25μA.The BAT pin has a 7KV ESD(HBM) capability. Other features include charge current monitor, undervoltage lockout, automatic recharge and a status pin to indicate charge termination and the presenceof an input voltage
Spartane-6 LXand LXT FPGAs are available in various speed grades, with -3 having the highest performance. The DC and AC electrical parameters of the Automotive XA Spartan-6 FPGAs and Defense-grade Spartan-6Q FPGAs devices are equivalent to the commercial SPECIFICATIONs except where noted. The timing characteristics of the commercial(XC)-2 speed grade industrial device are the same as for a-2 speed grade commercial device. The -2Q and -3Q speed grades are exclusively for the expanded(Q) temperature range. The timing characteristics are equivalent to those shown for the-2 and-3speed grades for the Automotive and Defense-grade devices.Spartan-6 FPGA DC and AC characteristics are specified for commercial (C), industrial (), and expanded (Q) temperature ranges. Only selected speed grades and/or devices might be available in the industrial or expanded temperature ranges for Automotive and Defense-grade devices.
