采用的PLC是西門(mén)子S7-200系列，仿真編程軟件為STEP7-Micro。在初始狀態(tài)，容器是空的，各閥門(mén)皆關(guān)閉，Y1、Y2、Y3燈皆暗和M攪拌機(jī)均為OFF，液面?zhèn)鞲衅鱈1、L2、L3為關(guān)，加熱器H為關(guān)。若要啟動(dòng)操作，按下啟動(dòng)按鈕(I0.0)，開(kāi)始下列操作： （1）Y1、Y2為ON，液體A和B同時(shí)注入容器，當(dāng)液面達(dá)到L2時(shí)，L2為ON，使Y1、Y2為OFF，Y3為ON，即關(guān)閉Y1、Y2閥門(mén)，打開(kāi)液體C的閥門(mén)Y3。 （2）液面達(dá)到L1時(shí)，Y3為OFF，M為ON，即關(guān)閉閥門(mén)Y3，電動(dòng)機(jī)起動(dòng)開(kāi)始攪拌。 （3）經(jīng)10S攪勻后，M為OFF，停止攪拌，H為ON，加熱器開(kāi)始加熱。 4、當(dāng)混合液體溫度達(dá)到某一指定值時(shí)，T為ON，H為OFF，停止加熱，使電磁閥Y4為ON，開(kāi)始放出混合液體。 （4）當(dāng)液體高度降為L(zhǎng)3后，L3從ON到OFF，再經(jīng)5S，容器放空，Y4為OFF，開(kāi)始下一周期。當(dāng)按下停止按鈕后，在當(dāng)前的混合操作處理完畢后，停止操作，停在初始狀態(tài)。
標(biāo)簽： plc 多種液體自動(dòng)混合 西門(mén)子 S7-200
上傳時(shí)間： 2021-12-31
上傳用戶：XuVshu
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
標(biāo)簽： DDR4
上傳時(shí)間： 2022-01-09
上傳用戶：
The PW2601 is a charger front-end integrated circuit designed to provide protection to Li-ionbatteries from failures of charging circuitry. The device monitors the input voltage, battery voltageand the charging current to make sure all three parameters are operated in normal range. Thedevice will switch off internal MOSFET to disconnect IN to OUT to protect load when any of inputvoltage, output current exceeds the threshold. The Over temperature protection (OTP) functionmonitors chip temperature to protect the device. The PW2601 also can protect the system’sbattery from being over charged by monitors the battery voltage continuously. The deviceoperates like a linear regulator, maintaining a 5.1V output with input voltages up to the input overvoltage threshold.The PW2601 is available in DFN-2x2-8L package. Standard products are Pb-free and Halogenfree
標(biāo)簽： pw2601
上傳時(shí)間： 2022-02-11
上傳用戶：
Single chip TFT-LCD Controller/Driver with On-chip Frame Memory (FM) Display Resolution: 240*RGB (H) *320(V) Frame Memory Size: 240 x 320 x 18-bit = 1,382,400 bits LCD Driver Output Circuits- Source Outputs: 240 RGB Channels- Gate Outputs: 320 Channels- Common Electrode Output Display Colors (Color Mode)- Full Color: 262K, RGB=(666) max., Idle Mode Off- Color Reduce: 8-color, RGB=(111), Idle Mode On Programmable Pixel Color Format (Color Depth) for Various Display Data input Format- 12-bit/pixel: RGB=(444)- 16-bit/pixel: RGB=(565)- 18-bit/pixel: RGB=(666) MCU Interface- Parallel 8080-series MCU Interface (8-bit, 9-bit, 16-bit & 18-bit)- 6/16/18 RGB Interface(VSYNC, HSYNC, DOTCLK, ENABLE, DB[17:0])- Serial Peripheral Interface(SPI Interface)- VSYNC Interface
上傳時(shí)間： 2022-03-04
上傳用戶：
基于藥物治療在臨床治療中的重要性,分析目前服藥提醒裝置存在的不足,以STM32F103VET6單片機(jī)為控制核心,設(shè)計(jì)了一種多功能電子藥箱。該系統(tǒng)包括顯示模塊、語(yǔ)音模塊和數(shù)據(jù)存儲(chǔ)模塊。顯示模塊通過(guò)觸摸屏電路和LED指示燈電路,與語(yǔ)音模塊相配合,實(shí)現(xiàn)了服藥提醒及指導(dǎo)的功能;數(shù)據(jù)存儲(chǔ)模塊通過(guò)EEPROM存儲(chǔ)電路,能夠?qū)崿F(xiàn)掉電時(shí)服藥信息不丟失的功能。并且為了實(shí)現(xiàn)電子藥箱的智能化控制,開(kāi)發(fā)了手機(jī)APP,兩者之間可通過(guò)WIFI進(jìn)行數(shù)據(jù)通信。經(jīng)測(cè)試,該藥箱能夠有效地幫助慢性病患者按時(shí)、定量、正確服用藥物,適合在家庭中推廣使用,具有較高的應(yīng)用價(jià)值和實(shí)踐意義。Based on the importance of drug therapy in clinical treatment, this paper analyzes the shortcomings of current drug reminder devices, and designs a multi-function electronic medicine box with STM32 F103 VET6 microcontroller as the control core. The system includes a display module, a voice module, and a data storage module. The display module cooperates with the voice module through the touch screen circuit and the LED indicator circuit to realize the function of reminding and guiding the medicine;the data storage module can realize the function of not losing the medication information when the power is off through the EEPROM storage circuit.After testing, the medicine box can effectively help chronic diseases patients to take drugs on time, in a quantitative and correct manner,and is suitable for popularization in the family, and has high application value and practical significance.
標(biāo)簽： 電子藥箱
上傳時(shí)間： 2022-03-27
上傳用戶：
數(shù)字示波器功能強(qiáng)大,使用方便,但是價(jià)格相對(duì)昂貴。本文以Ti的MSP430F5529為主控器,以Altera公司的EP2C5T144C8 FPGA器件為邏輯控制部件設(shè)計(jì)數(shù)字示波器。模擬信號(hào)經(jīng)程控放大、整形電路后形成方波信號(hào)送至FPGA測(cè)頻,根據(jù)頻率值選擇采用片上及片外高速AD分段采樣。FPGA控制片外AD采樣并將數(shù)據(jù)輸入到FIFO模塊中緩存,由單片機(jī)進(jìn)行頻譜分析。測(cè)試表明:簡(jiǎn)易示波器可以實(shí)現(xiàn)自動(dòng)選檔、多采樣率采樣、高精度測(cè)頻及頻譜分析等功能。Digital oscilloscope is powerful and easy to use, but also expensive. The research group designed a low-cost digital oscilloscope, the chip of MSP430F5529 of TI is chosen as the main controller and the device of EP2C5T144C8 of Altera company is used as the logic control unit. Analog signal enter the programmable amplifier circuit, shaping circuit and other pre-processing circuit. The shaped rectangular wave signal is sent to FPGA for measure the frequency. According to the frequency value to select AD on-chip or off-chip high-speed AD for sampling. FPGA controls the off-chip AD sampling and buffers AD data by FIFO module. The single chip microcomputer receives the data, and do FFT for spectrum analysis. The test shows that the simple oscilloscope can realize automatic gain selection, sampling at different sampling rates, high precision frequency measurement and spectrum analysis.
標(biāo)簽： msp430 單片機(jī) fpga 數(shù)字示波器
上傳時(shí)間： 2022-03-27
上傳用戶：
IC-Ucc28950改進(jìn)的相移全橋控制設(shè)計(jì)UcC28950是T公司進(jìn)一步改進(jìn)的相移全橋控制C，它比原有標(biāo)準(zhǔn)型UCC2895主要改進(jìn)為Zvs能力范圍加寬，對(duì)二次側(cè)同步整流直接控制，提高了輕載空載轉(zhuǎn)換效率，而且此時(shí)可以O(shè)N/OFF控制同步整流成為綠色產(chǎn)品。既可以作電流型控制，也可以作電壓型控制。增加了閉環(huán)軟啟動(dòng)及使能功能。低啟動(dòng)電流，逐個(gè)周期式限流過(guò)流保護(hù)，開(kāi)關(guān)頻率可達(dá)1MHz UCC28950基本應(yīng)用電路如圖1所示，內(nèi)部等效方框電路如圖2所示。*啟動(dòng)中的保護(hù)邏輯UCC28950啟動(dòng)前應(yīng)該首先滿足下列條件：*VDD電壓要超過(guò)UvLo閾值，73V*5V基準(zhǔn)電壓已經(jīng)實(shí)現(xiàn)*芯片結(jié)溫低于140℃。*軟啟動(dòng)電容上的電壓不低于0.55V。如果滿足上述條件，一個(gè)內(nèi)部使能信號(hào)EN將產(chǎn)生出來(lái)，開(kāi)始軟啟動(dòng)過(guò)程。軟啟動(dòng)期間的占空比，由Ss端電壓定義，且不會(huì)低于由Twm設(shè)置的占空比，或由逐個(gè)周期電流限制電路決定的負(fù)載條件電壓基準(zhǔn)精確的（±1.5%5V基準(zhǔn)電壓，具有短路保護(hù)，支持內(nèi)部電路，并能提供20mA外部輸出電流，其用于設(shè)置DCDC變換器參數(shù)，放置一個(gè)低ESR，ESL瓷介電容（1uF-2.2uF旁路去耦，從此端接到GND，并緊靠端子，以獲得最佳性能。唯一的關(guān)斷特性發(fā)生在C的VDD進(jìn)入U(xiǎn)VLo狀態(tài)。*誤差放大器（EA+EA，COMP）誤差放大器有兩個(gè)未提交的輸入端，EA+和EA-。它具有3MHz帶寬具有柔性的閉環(huán)反饋環(huán)。EA+為同相端，EA-為反向端。COMP為輸出端輸入電壓共模范圍保證在0.5V-3.6V。誤差放大器的輸出在內(nèi)部接到pWM比較器的同相輸入端，誤差放大器的輸出范圍為0.25V4.25V，遠(yuǎn)超出PwM比較器輸入上斜信號(hào)范圍，其從0.8v-2.8V。軟啟動(dòng)信號(hào)作為附加的放大器的同相輸入，當(dāng)誤差放大器的兩個(gè)同相輸入為低，是支配性的輸入，而且設(shè)置的占空比是誤差放大器輸出信號(hào)與內(nèi)部斜波相比較后放在PWM比較器的輸入處。
標(biāo)簽： ucc2895
上傳時(shí)間： 2022-03-31
上傳用戶：
設(shè)計(jì)功率MOSFET驅(qū)動(dòng)電路時(shí)需重點(diǎn)考慮寄生參數(shù)對(duì)電路的影響。米勒電容作為MOSFET器件的一項(xiàng)重要參數(shù),在驅(qū)動(dòng)電路的設(shè)計(jì)時(shí)需要重點(diǎn)關(guān)注。重點(diǎn)觀察了MOSFET的開(kāi)通和關(guān)斷過(guò)程中柵極電壓、漏源極電壓和漏源極電流的變化過(guò)程,并分析了米勒電容、寄生電感等寄生參數(shù)對(duì)漏源極電壓和漏源極電流的影響。分析了柵極電壓在米勒平臺(tái)附近產(chǎn)生振蕩的原因,并提出了抑制措施,對(duì)功率MOSFET的驅(qū)動(dòng)設(shè)計(jì)具有一定的指導(dǎo)意義。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
標(biāo)簽： mosfet
上傳時(shí)間： 2022-04-02
上傳用戶：默默
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標(biāo)簽： 開(kāi)關(guān)電源
上傳時(shí)間： 2022-06-05
上傳用戶：
高通藍(lán)牙芯片qcc5127詳細(xì)規(guī)格書(shū)datasheet.pdf英文版，共97頁(yè) 詳細(xì)說(shuō)明:1 Package information(pin allocations, pios terminal functions)2 Bluetooth subsystem 3 Cystal oscillator4 System powerstates (Idel,Active,Sleep, Off)5 Host Interface subsystem6 Applications subsystem ( QSPI Flash controller)7 Audio subsystem(Dual core Kalimba, ROM, RAM and caches, Data, engine)8 Audio interfaces ( Analog, Digital, Simultaneous audio routing)9 Peripheral interfaces (PIOs, LED, USB, SPI, UART)10 Boot manager11 System manager12 example application schematic13 Electrical characteristics14 Audio performance15 Bluetooth performance16 Power consumption
上傳時(shí)間： 2022-06-12
上傳用戶：
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