This book introduces embedded systems to C and C++ programmers. Topics include testing memory devices, writing and erasing Flash memory, verifying nonvolatile memory contents, controlling on-chip peripherals, device driver design and implementation, optimizing embedded code for size and speed, and making the most of C++ without a performance penalty.
This manual describes SAMSUNG s S3C2410A 16/32-bit RISC microprocessor. This product is designed to provide
hand-held devices and general applications with cost-effective, low-power, and high-performance micro-controller
solution in small die size. To reduce total system cost, the S3C2410A includes the following components separate
16KB Instruction and 16KB Data Cache, MMU to handle virtual memory management, LCD Controller (STN & TFT),
NAND Flash Boot Loader, System Manager (chip select logic and SDRAM Controller), 3-ch UART, 4-ch DMA, 4-ch
Timers with PWM, I/O Ports, RTC, 8-ch 10-bit ADC and Touch Screen Interface, IIC-BUS Interface, IIS-BUS
Interface, USB Host, USB Device, SD Host & Multi-Media Card Interface, 2-ch SPI and PLL for clock generation.
This manual describes SAMSUNG s S3C2410X 16/32-bit RISC microprocessor. This product is designed to
provide hand-held devices and general applications with cost-effective, low-power, and high-performance microcontroller
solution in small die size. To reduce total system cost, the S3C2410X includes the following
components separate 16KB Instruction and 16KB Data Cache, MMU to handle virtual memory management,
LCD Controller (STN & TFT), NAND Flash Boot Loader, System Manager (chip select logic and SDRAM
Controller), 3-ch UART, 4-ch DMA, 4-ch Timers with PWM, I/O Ports, RTC, 8-ch 10-bit ADC and Touch Screen
Interface, IIC-BUS Interface, IIS-BUS Interface, USB Host, USB Device, SD Host & Multi-Media Card Interface,
2-ch SPI and PLL for clock generation.
The BTS5016SDA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on
Smart SIPMOS chip on chip technology.
The BTS5016SDA has a current controlled input and offers a diagnostic feedback with load current sense and a
defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.
The AZ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current.
The AZ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within 1% for 1.5V, 1.8V, 2.5V, 2.85V, 3.3V, 5.0V and adjustable versions or 2% for 1.2V version. Current limit is trimmed to ensure specified output current and controlled short-circuit current. On-chip thermal shutdown provides protection against any combination of overload and ambient temperature that would create excessive junction temperature.
The AZ1117 has an adjustable version, that can provide the output voltage from 1.25V to 12V with only 2 external resistors.
This research work aims at eliminating the off-chip RF SAW filters from fre-
quency division duplexed (FDD) receivers. In the first approach, a monolithic passive
RF filter was constructed using on-chip capacitors and bondwire inductors. The bond-
wire characteristics were studied in details and the effect of mutual inductive coupling
between the bondwires on the filter performance was analyzed. Based on that, a bond-
wire configuration was proposed to improve the frequency response of the filter. The
filter was implemented in 0.18 μm CMOS process for WCDMA applications.
Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability
of electronic components. It is an event in which a finite amount of charge is trans-
ferred from one object (i.e., human body) to another (i.e., microchip). This process
can result in a very high current passing through the microchip within a very short
period of time, and, hence, more than 35% of chip damages can be attributed to an
ESD-related event. As such, designing on-chip ESD structures to protect integrated
circuits against the ESD stresses is a high priority in the semiconductor industry.
