The SP2526A device is a dual +3.0V to +5.5V USB Supervisory Power Control Switch ideal
for self-powered and bus-powered Universal Serial Bus (USB) applications. Each switch has
low on-resistance (110mΩ typical) and can supply 500mA minimum. The fault currents are
limited to 1.0A typical and the flag output pin for each switch is available to indicate fault
conditions to the USB controller. The thermal shutdown feature will prevent damage to the
device when subjected to excessive current loads. The undervoltage lockout feature will
ensure that the device will remain off unless there is a valid input voltage present.
AEC-Q100 qualified
? 12 V and 24 V battery systems compliance
? 3.3 V and 5 V logic compatible I/O
? 8-channel configurable MOSFET pre-driver
– High-side (N-channel and P-channel MOS)
– Low-side (N-channel MOS)
– H-bridge (up to 2 H-bridge)
– Peak & Hold (2 loads)
? Operating battery supply voltage 3.8 V to 36 V
? Operating VDD supply voltage 4.5 V to 5.5 V
? All device pins, except the ground pins, withstand at least 40 V
? Programmable gate charge/discharge currents for improving EMI behavior
The AZ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current.
The AZ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within 1% for 1.5V, 1.8V, 2.5V, 2.85V, 3.3V, 5.0V and adjustable versions or 2% for 1.2V version. Current limit is trimmed to ensure specified output current and controlled short-circuit current. On-chip thermal shutdown provides protection against any combination of overload and ambient temperature that would create excessive junction temperature.
The AZ1117 has an adjustable version, that can provide the output voltage from 1.25V to 12V with only 2 external resistors.
Texas Instruments常用元件庫(kù)
TI Analog Timer Circuit.IntLib
TI Logic Flip-Flop.IntLib
TI Logic Gate 1.IntLib
TI Logic Gate 2.IntLib
TI Logic Latch.IntLib
TI Logic Switch.IntLib
TI Power Mgt Voltage Reference.IntLib
TI Power Mgt Voltage Regulator.IntLib
Texas Instruments Footprints.PcbLib等等
High-Speed, Low-Power
Dual Operational Amplifier
The AD826 features high output current drive capability of
50 mA min per amp, and is able to drive unlimited capacitive
loads. With a low power supply current of 15 mA max for both
amplifiers, the AD826 is a true general purpose operational
amplifier.
The AD826 is ideal for power sensitive applications such as video
cameras and portable instrumentation. The AD826 can operate
from a single +5 V supply, while still achieving 25 MHz of band
width. Furthermore the AD826 is fully specified from a single
+5 V to ±15 V power supplies.
The AD826 excels as an ADC/DAC buffer or active filter in
data acquisition systems and achieves a settling time of 70 ns
to 0.01%, with a low input offset voltage of 2 mV max. The
AD826 is available in small 8-lead plastic mini-DIP and SO
packages.
This book is concerned with integrated circuits and systems for wireless and
mobile communications. Circuit techniques and implementation of reconfigurable
low-voltage and low-power single-chip CMOS transceivers for multiband and multi-
mode universal wireless communications are the focus of the book. Applications
encompass both long-range mobile cellular communications (GSM and UMTS)
and short-range wireless LANs (IEEE802.11 and Bluetooth). Recent advances in
research into transceiver architecture, RF frontend, analogue baseband, RF CAD
and automatic testing are reported.
For more than a century, overhead lines have been the most commonly used
technology for transmitting electrical energy at all voltage levels, especially on the
highest levels. However, in recent years, an increase in both the number and length
of HVAC cables in the transmission networks of different countries like Denmark,
Japan or United Kingdom has been observed. At the same time, the construction of
offshore wind farms, which are typically connected to the shore through HVAC
cables, increased exponentially.
GaN is an already well implanted semiconductor
technology, widely diffused in the LED optoelectronics
industry. For about 10 years, GaN devices have also been
developed for RF wireless applications where they can
replace Silicon transistors in some selected systems. That
incursion in the RF field has open the door to the power
switching capability in the lower frequency range and
thus to the power electronic applications.
Compared to Silicon, GaN exhibits largely better figures
for most of the key specifications: Electric field, energy
gap, electron mobility and melting point. Intrinsically,
GaN could offer better performance than Silicon in
terms of: breakdown voltage, switching frequency and
Overall systems efficiency.
There have been many developments in the field of power electronics since
the publication of the second edition, almost five years ago. Devices have
become bigger and better - bigger silicon die, and current and voltage
ratings. However, semiconductor devices have also become smaller and
better, integrated circuit devices, that is. And the marriage of low power
integrated circuit tecnology and high power semiconductors has resulted in
benefit to both fields.
