Since its release, Arduino has become more than just a development platform; it has become a culture built around the idea of open source and open hardware, and one that is reimagining computer science and education. Arduino has opened hardware development by making the starting skills easy to obtain, but retaining the complexities of real-world application. This combination makes Arduino a perfect environment for school students, seasoned developers, and designers. This is the first Arduino book to hold the title of “Pro,” and demonstrates skills and concepts that are used by developers in a more advanced setting. Going beyond projects, this book provides examples that demonstrate concepts that can be easily integrated into many different projects and provide inspiration for future ones. The focus of this book is as a transition from the intermediate to the professional.
上傳時間： 2020-06-09
上傳用戶：shancjb
The past decade has seen an explosion of machine learning research and appli- cations; especially, deep learning methods have enabled key advances in many applicationdomains,suchas computervision,speechprocessing,andgameplaying. However, the performance of many machine learning methods is very sensitive to a plethora of design decisions, which constitutes a considerable barrier for new users. This is particularly true in the booming field of deep learning, where human engineers need to select the right neural architectures, training procedures, regularization methods, and hyperparameters of all of these components in order to make their networks do what they are supposed to do with sufficient performance. This process has to be repeated for every application. Even experts are often left with tedious episodes of trial and error until they identify a good set of choices for a particular dataset.
標簽： Auto-Machine-Learning-Methods-Sys tems-Challenges
上傳時間： 2020-06-10
上傳用戶：shancjb
Artificial Intelligence (AI) has undoubtedly been one of the most important buz- zwords over the past years. The goal in AI is to design algorithms that transform com- puters into “intelligent” agents. By intelligence here we do not necessarily mean an extraordinary level of smartness shown by superhuman; it rather often involves very basic problems that humans solve very frequently in their day-to-day life. This can be as simple as recognizing faces in an image, driving a car, playing a board game, or reading (and understanding) an article in a newspaper. The intelligent behaviour ex- hibited by humans when “reading” is one of the main goals for a subfield of AI called Natural Language Processing (NLP). Natural language 1 is one of the most complex tools used by humans for a wide range of reasons, for instance to communicate with others, to express thoughts, feelings and ideas, to ask questions, or to give instruc- tions. Therefore, it is crucial for computers to possess the ability to use the same tool in order to effectively interact with humans.
標簽： Embeddings Processing Language Natural in
上傳時間： 2020-06-10
上傳用戶：shancjb
%this is an example demonstrating the Radial Basis Function %if you select a RBF that supports it (Gausian, or 1st or 3rd order %polyharmonic spline), this also calculates a line integral between two %points.
上傳時間： 2021-07-02
上傳用戶：19800358905
Multisim官方示例Multisim仿真例程基礎電路范例135例合集:Chapter 1 - RLC CircuitsChapter 2 - DiodesChapter 3 - TransistorsChapter 4 - AmplifiersChapter 5 - OpampsChapter 6 - FiltersChapter 7 - Miscellaneous CircuitsFundamental Circuits.pdf004 Parallel DC Circuits.ms10005 Series-Parrallel DC Circuit.ms10006 Current Analysis.ms10007 Millmans Theorem 1.ms10008 Millmans Theorem 2.ms10009 Kirchhoff's Current Law.ms10010 Thevenin's Theorem.ms10011 Superposition Principle.ms10012 Nortons Theorem and Source Conversion.ms10013 AC Voltage Measurement.ms10014 Frequency Response of the Series RL Network.ms10015 RL High and Low Pass Filter.ms10016 Frequency Response of the Series RC Network.ms10017 RC High and Low Pass Filter.ms10019 Center-Tapped Full-Wave Rectifier.ms10020 Bridge Rectifier.ms10021 Capacitor-Input Rectifier Filter.ms10022 Diode Clipper (Limiter).ms10023 Diode Clipper.ms10024 Diode Clamper (DC Restorer).ms10025 Diode Voltage Doubler.ms10026 Zener Diode and Voltage Regulation 1.ms10027 Zener Diode and Voltage Regulation 2.ms10028 Zener Diode and Voltage Regulation 3.ms10105 TTL Inverter.ms10107 TTL Gate.ms10109 OR Gate Circuit.ms10111 Over-Damp Circuit.ms10113 Critical-Damp Circuit.ms10115 Series RLC Circuit 1.ms10117 Clapp Oscillator.ms10119 Differential Amplifier 1.ms10121 Differential Amplifier in Common Mode.ms10123 LC Oscillator with Unity Gain Buffer.ms10125 Notch Filter.ms10127 PNP Differential Pair.ms10129 Crossover Network.ms10131 Second-Order High-Pass Chebyshev Filter.ms10133 Third-Order High-Pass Chebyshev Filter.ms10135 Fifth-Order High-Pass Filter.ms10
標簽： multisim
上傳時間： 2021-10-27
上傳用戶：trh505
那么我們可以進行如下計算：1，輸出電流Iout=Pout/Udc=600/400=1.5A2，最大輸入功率Pin=Pout/η=600/0.92=652W3，輸入電流最大有效值Iinrmsmax=Pin/Umin=652/85=7.67A4，那么輸入電流有效值峰值為Iinrmsmax*1.414=10.85A5，高頻紋波電流取輸入電流峰值的20%，那么Ihf=0.2*Iinrmsmax=0.2*10.85=2.17A6，那么輸入電感電流最大峰值為：ILpk=Iinrmsmax+0.5*Ihf=10.85+0.5*2.17=11.94A7，那么升壓電感最小值為Lmin=(0.25*Uout)/(Ihf*fs)=(0.25*400)/(2.17*65KHz)=709uH8，輸出電容最小值為：Cmin=Iout/(3.14*2*fac*Voutp-p)=1.5/(3.14*2*50*10)=477.7uF，實際電路中還要考慮hold up時間，所以電容容量可能需要重新按照hold up的時間要求來重新計算。實際的電路中，我用了1320uF，4只330uF的并聯。
標簽： 變壓器
上傳時間： 2021-12-04
上傳用戶：
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
標簽： DDR4
上傳時間： 2022-01-09
上傳用戶：
mosfet并聯使用介紹了并聯使用的注意事項，特別注意避開Vgsth zero thermal coefficient以下的正溫特性設計
上傳時間： 2022-03-01
上傳用戶：bluedrops
華為AI安全白皮書2018-cn近年來，隨著海量數據的積累、計算能力的發展、機器學習方法與系統的持續創新與演進，諸如圖像識別、語音識 別、自然語言翻譯等人工智能技術得到普遍部署和廣泛應用。越來越多公司都將增大在AI的投入，將其作為業務發展 的重心。華為全球產業愿景預測：到2025年，全球將實現1000億聯接，覆蓋77%的人口；85%的企業應用將部署到 云上；智能家庭機器人將進入12%的家庭，形成千億美元的市場。 人工智能技術的發展和廣泛的商業應用充分預示著一個萬物智能的社會正在快速到來。1956年，麥卡錫、明斯基、 香農等人提出“人工智能”概念。60年后的今天，伴隨著谷歌DeepMind開發的圍棋程序AlphaGo戰勝人類圍棋冠 軍，人工智能技術開始全面爆發。如今，芯片和傳感器的發展使“+智能”成為大勢所趨：交通+智能，最懂你的 路；醫療+智能，最懂你的痛；制造+智能，最懂你所需。加州大學伯克利分校的學者們認為人工智能在過去二十年 快速崛起主要歸結于如下三點原因[1]：1）海量數據：隨著互聯網的興起，數據以語音、視頻和文字等形式快速增 長；海量數據為機器學習算法提供了充足的營養，促使人工智能技術快速發展。2）高擴展計算機和軟件系統：近 年來深度學習成功主要歸功于新一波的CPU集群、GPU和TPU等專用硬件和相關的軟件平臺。3）已有資源的可獲得 性：大量的開源軟件協助處理數據和支持AI相關工作，節省了大量的開發時間和費用；同時許多云服務為開發者提供 了隨時可獲取的計算和存儲資源。 在機器人、虛擬助手、自動駕駛、智能交通、智能制造、智慧城市等各個行業，人工智能正朝著歷史性時刻邁進。谷 歌、微軟、亞馬遜等大公司紛紛將AI作為引領未來的核心發展戰略。2017年谷歌DeepMind升級版的AlphaGo Zero橫 空出世；它不再需要人類棋譜數據，而是進行自我博弈，經過短短3天的自我訓練就強勢打敗了AlphaGo。AlphaGo Zero能夠發現新知識并發展出打破常規的新策略，讓我們看到了利用人工智能技術改變人類命運的巨大潛能。 我們現在看到的只是一個開始；未來，將會是一個全聯接、超智能的世界。人工智能將為人們帶來極致的體驗，將 積極影響人們的工作和生活，帶來經濟的繁榮與發展。
上傳時間： 2022-03-06
上傳用戶：
目前電動汽車主要以鋰電池作為動力來源,為了提高鋰電池的使用時間和安全性,為鋰電池提供安全良好的運行環境,電池管理系統應運而生。BMS主控單元基于S32K144汽車級單片機,通過主從式網絡控制結構能夠對鋰電池的各個參數進行采集與分析。采用擴展卡爾曼濾波對電池的荷電狀態(SOC)進行估算,克服普通估算方法無法避免電池內阻誤差的缺點,通過Matlab/Simulink軟件仿真驗證可使估算誤差達到2%以內。At present,electric vehicles mainly use lithium batteries as the power source.In order to improve the running time and safety of lithium batteries,a safe and good operating environment for power batteries is provided,and a battery management system(BMS) has emerged.The BMS main control unit is based on the S32K144 automotive-grade control chip.Through the master-slave network control structure,it can collect and analyze the various parameters of the lithium battery.The Extended Kalman Filter(EKF) is used to estimate the state of charge(SOC) of the battery,which overcomes the shortcomings of the internal estimation method that cannot overcome the internal resistance error of the battery.It can be verified by Matlab/Simulink software simulation.The estimation error is within 2%.
上傳時間： 2022-03-26
上傳用戶：XuVshu
