設(shè)計(jì)了一種基于PIC16C71單片機(jī)的數(shù)字水溫配制閥。該配制閥采用NTC熱敏電阻作溫度傳感器，與固定電阻組成簡(jiǎn)單分壓電路作為水溫測(cè)量電路，利用PIC16C71單片機(jī)內(nèi)置的8位A/D轉(zhuǎn)換器把熱敏電阻上的模擬電壓轉(zhuǎn)換為數(shù)字量，PIC16C71單片機(jī)控制直流電機(jī)驅(qū)動(dòng)混水閥調(diào)節(jié)冷熱水的混合比例實(shí)現(xiàn)水溫調(diào)節(jié)。給出了控制電路圖，對(duì)水溫測(cè)量電路的參數(shù)選擇和測(cè)溫精度作了詳細(xì)討論。實(shí)驗(yàn)和分析表明，選用阻值較大的NTC熱敏電阻和分壓電阻可較好地解決熱敏電阻因功耗較大造成的熱擊穿問(wèn)題。 Abstract: A digital valve for controlling water temperature based on PIC16C71 was presented in this paper.A bleeder circuit which consisted of a NTC thermistor as temperature sensor and a fixed resistance was designed as water temperature measuring circuit.The analog voltage on the thermistor was converted into digital signal by a 8-bit A/D converter embedded in PIC16C71. Based on the digital signal， the MCU PIC16C71 drived the valve by a DC motor to adjust the water temperature through adjusting the proportion of hot water and cold water.The circuit diagram of controller was given，the principle，the component parameters and the accuracy of measuring temperatures were also dissertated in detail. It was found by experiment and analysis that thermal breakdown of thermistor caused by high power could be solved by selecting thermistor and fixed resistance with high impedance value.
上傳時(shí)間： 2013-11-08
上傳用戶：Yue Zhong
EDB (Evan s Debugger) is a QT4 based binary mode debugger with the goal of having usability on par with OllyDbg. It uses a plugin architecture, so adding new features can be done with ease. The current release is for Linux, but future releases will target more platforms. Release focus: Major feature enhancements Changes: A new disassembly engine. A bug that could cause crashing was fixed. There is a new flags breakdown in the register view, an environment view plugin, and improved analysis (including a good speed increase). A bug in QT where disabled events could be triggered has been worked around.
標(biāo)簽： usability Debugger debugger binary
上傳時(shí)間： 2013-12-21
上傳用戶：gundamwzc
These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specifi ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
標(biāo)簽： enhancement transistors P-Channel are
上傳時(shí)間： 2017-02-17
上傳用戶：aeiouetla
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
標(biāo)簽： GaN-on-Si Displace and SiC Si
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
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