Abstract: This application note describes how to design boost converters using the MAX17597 peakcurrent-mode controller. Boost converters can be operated in discontinuous conduction mode (DCM) orcontinuous conduction mode (CCM). This operating mode can affect the component choices, stress levelin power devices, and controller design. Formulas for calculating component values and ratingsare alsopresented.
交流功率因數轉換器 特點： 精確度0.25%滿刻度 ±0.25o 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測試5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波電壓測試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，穩定性高 主要規格： 精確度: 0.25% F.S. ±0.25°(23 ±5℃) 輸入負載: <0.2VA (Voltage) <0.2VA (Current) 最大過載能力: Current related input: 3 x rated continuous 10 x rated 30 sec. 25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 輸出反應速度: < 250ms(0~90%) 輸出負載能力: < 10mA for voltage mode < 10V for current mode 輸出之漣波: < 0.1% F.S. 歸零調整范圍: 0~ ±5% F.S. 最大值調整范圍: 0~ ±10% F.S. 溫度系數: 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣抗阻: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power/case) 突波測試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用環境條件: -20~60℃(20 to 90% RH non-condensed) 存放環境條件: -30~70℃(20 to 90% RH non-condensed) CE認證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
交流電壓，電流轉換器 特點： 精確度0.25%滿刻度(RMS) 多種輸入,輸出選擇 輸入與輸出絕緣耐壓2仟伏特/1分鐘 沖擊電壓測試5仟伏特(1.2x50us) (IEC255-4,ANSI C37.90a/1974) 突波電壓測試2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小，穩定性高 2:主要規格 精確度:0.25%F.S.(RMS) (23 ±5℃) 輸入負載: <0.2VA(voltage) <0.2VA(current) 最大過載能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2x rated continuous 輸出反應時間: <250ms (0~90%) 輸出負載能力: <10mA for voltage mode <10V for current mode 輸出漣波: <0.1% F.S. 歸零調整范圍: 0~±5% F.S. 最大值調整范圍: 0~±10% F.S. 溫度系數: 100ppm/℃ (0~50℃) 隔離特性: Input/Output/Power/Case 絕緣抗阻: >100Mohm with 500V DC 絕緣耐壓能力: 2KVac/1 min. (input/output/power) 行動測試: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV (1.2 x 50us) 突波測試: 2.5KV-0.25ms/1MHz 使用環境條件: -20~60℃(20 to 90% RH non-condensed) 存放環境條件: -30~70℃(20 to 90% RH non-condensed) CE認證: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001
The MAX5713/MAX5714/MAX5715 4-channel, low-power,8-/10-/12-bit, voltage-output digital-to-analog converters(DACs) include output buffers and an internal referencethat is selectable to be 2.048V, 2.500V, or 4.096V. TheMAX5713/MAX5714/MAX5715 accept a wide supplyvoltage range of 2.7V to 5.5V with extremely low power(3mW) consumption to accommodate most low-voltageapplications. A precision external reference input allowsrail-to-rail operation and presents a 100kI (typ) load toan external reference.
The MAX4968/MAX4968A are 16-channel, high-linearity,high-voltage, bidirectional SPST analog switches with18I (typ) on-resistance. The devices are ideal for use inapplications requiring high-voltage switching controlledby a low-voltage control signal, such as ultrasound imagingand printers. The MAX4968A provides integrated40kI (typ) bleed resistors on each switch terminal todischarge capacitive loads. Using HVCMOS technology,these switches combine high-voltage bilateral MOSswitches and low-power CMOS logic to provide efficientcontrol of high-voltage analog signals.
Abstract: Alexander Graham Bell patented twisted pair wires in 1881. We still use them today because they work so well. In addition we have the advantage ofincredible computer power within our world. Circuit simulators and filter design programs are available for little or no cost. We combine the twisted pair and lowpassfilters to produce spectacular rejection of radio frequency interference (RFI) and electromagnetic interference (EMI). We also illustrate use of a precision resistorarray to produce a customizable differential amplifier. The precision resistors set the gain and common mode rejection ratios, while we choose the frequencyresponse.
Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike the well known tail current observed during the turn-offphase of IGBTs. CoolMOS™ virtually combines the lowswitching losses of a MOSFET with the on-state losses of anIGBT.
