For more than a century, overhead lines have been the most commonly used technology for transmitting electrical energy at all voltage levels, especially on the highest levels. However, in recent years, an increase in both the number and length of HVAC cables in the transmission networks of different countries like Denmark, Japan or United Kingdom has been observed. At the same time, the construction of offshore wind farms, which are typically connected to the shore through HVAC cables, increased exponentially.
標簽： Electromagnetic Transients Cables Power in
上傳時間： 2020-06-07
上傳用戶：shancjb
function y=lagr(x0,y0,x) %x0,y0為節點 %x是插值點 n=length(x0); m=length(x); for i=1:m z=x(i); s=0.0; for k=1:n p=1.0; for j=1:n if j~=k p=p*(z-x0(j))/(x0(k)-x0(j)); end end s=p*y0(k)+s; end y(i)=s; end
標簽： lagr
上傳時間： 2020-06-09
上傳用戶：shiyc2020
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
標簽： DDR4
上傳時間： 2022-01-09
上傳用戶：
電學中的測量技術涉及范圍非常廣,電流測量在電學計量中占有非常重要的位置。如何精確地進行電流測量是精密測量的一大難題。傳統的電流檢測電路多采用運算放大芯片與片外電流檢測電路相結合的方式,電路集成度很低,需要較多的接口和資源才能完成對電路的檢測。本文把所有電路部分都集成在一塊芯片上,包括檢測電阻,運算放大器電路及模擬轉數字轉換電路,從而在電路內部可以進行電流檢測,使電路更好的集成化。前置電路使用二級共源共柵結構的運算放大器,減小溝道長度調制效應造成的電流誤差。10位SAR ADC中采用電容驅動能力強的傳輸門保證了模數轉化器的有效精度。比較器模塊采用再生鎖存器與遲滯比較器作為基礎單元組合解決精密測量的問題。本設計可以作為嵌入芯片內的一小部分而檢測芯片中的微小電流1mA~100mA,工作電壓在1.8v左右,電流檢測精度預期達到10uA的需求。The measurement technology in electricity involves a wide range,and current measurement plays a very important position in electrical measurement.How to accurately measure current is a big problem in precision measurement. The traditional current detecting circuit adopts the combination of the operational amplifier chip and theoff-chip current detecting circuit, The circuit integration is very low, and more interfaces and resources are needed tocomplete the circuit detection.This topic integrates all the circuit parts into one chip, including detection resistance, operational amplifier circuit andanalog to digital conversion circuit. Highly integrated circuit makes the external resources on the chip more intensive,so that current detection can be carried out inside the circuit, so that the circuit can be better integrated. Thefront-end circuit of this project uses two-stage cascade operational amplifier and cascade tube to reduce the currenterror caused by channel length modulation effect. In 10-bit SAR ADC, the transmission gate with strong capacitivedriving ability ensures the effective accuracy of the analog-to-digital converter. Comparator module uses regenerativelatch and hysteresis comparator as basic unit to solve the difficult problem of precision measurement. This topic can beused as a small part of the embedded chip to detect the micro-current in the chip 1 mA~100 mA, the working voltageis about 1.8v, and the current detection accuracy is expected to reach the requirement of 10 uA.
上傳時間： 2022-04-03
上傳用戶：
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
標簽： igbt
上傳時間： 2022-06-20
上傳用戶：wangshoupeng199
1，使用wireshark獲取完整的UDP報文打開wireshark，設置監聽網卡后，使用google chrome瀏覽器訪問我騰訊微博的i http://p.t.qq.com/welcomeback.php？lv=1#！/ist/qqfriends/5/？pgv_ref-im.perinfo.pe rinfo.icon？ptlang-2052&pgv-ref-im.perinfo.perinfo.icon，抓得的UDP報文如圖1所示。分析以上的報文內容，UDP作為一種面向無連接服務的運輸協議，其報文格式相當簡單。第一行中，Source port：64318是源端口號。第二行中，Destination port：53是目的端口號。第三行中，Length：34表示UDP報文段的長度為34字節。第四行中，Checksum之后的數表示檢驗和。這里0x表示計算機中16進制數的開始符，其后的4f0e表示16進制表示的檢驗和，把它們換成二進制表示為：0100 1111 0000 1110.從wireshark的抓包數據看出，我抓到的UDP協議多數被應用層的DNS協議應用。當一臺主機中的DNS應用程序想要進行一次查詢時，它構成了一個DNS查詢報文并將其交給UDP，UDP無須執行任何實體握手過程，主機端的UDP為此報文添加首部字段，并將其發出。
上傳時間： 2022-06-20
上傳用戶：
VITA 46 Highlights Retain standard 6U and 3U form-factors Height, depth, pitch, front panel arrangements, conduction-cooled interfaces, etc.Support standard-length PMC and XMC modules· Support high-speed serial fabric on the backplane Tyco MultiGig RT2,7-row connector· Support VME and PCI interfaces for legacy compatibility· Provision for optical connectors as option· Support improved logistics Provide support for Line Replaceable Module(LRM) applications with ESD-protected connector Alignment and keying blocks
標簽： vita46
上傳時間： 2022-07-25
上傳用戶：
