In the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The phenom- ena related to ESD events in semiconductor devices take place outside the realm of normal device operation. Hence, the physics governing this behavior are not typ- ically found in general textbooks on semiconductors.
標(biāo)簽： Integrated Circuits Silicon ESD In
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
Electrostatic discharge (ESD) events can have serious detrimental effects on the manufacture and performance of microelectronic devices, the systems that contain them, and the manufacturing facilities used to produce them. Submicron device technologies, high system operating speeds, and factory automation are making ESD control programs a critical factor in the quality and reliability of ESD-sensitive products.
標(biāo)簽： Management Program ESD
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
The goal of this book is to introduce the simulation methods necessary to describe the behaviour of semiconductor devices during an electrostatic discharge (ESD). The challenge of this task is the correct description of semiconductor devices under very high current density and high temperature transients. As it stands, the book can be no more than a snapshot and a summary of the research in this field during the past few years. The authors hope that the book will provide the basis for further development of simulation methods at this current frontier of device physics.
標(biāo)簽： Development Protection ESD
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
The challenges associated with the design and implementation of Electro- static Discharge (ESD) protection circuits become increasingly complex as technology is scaled well into nano-metric regime. One must understand the behavior of semiconductor devices under very high current densities, high temperature transients in order to surmount the nano-meter ESD challenge. As a consequence, the quest for suitable ESD solution in a given technology must start from the device level. Traditional approaches of ESD design may not be adequate as the ESD damages occur at successively lower voltages in nano-metric dimensions.
標(biāo)簽： Protection Circuit Device Design ESD and
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
This book on electrostatic discharge phenomena is essentially a translation and update ofa Swedish edition from 1992. The book is intended for people working with electronic circuits and equipments, in application and development. All personnel should be aware of the ESD-hazards, especially those responsible for quality. ESD-prevention is a part of TQM (Total Quality Management). The book is also usable for courses on the subject.
標(biāo)簽： Electronics Scourge ESD The of
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
Since electronic equipment was first developed, static electricity has been a source of problems for users and designers. In the last few years, however, electrostatic discharge (ESD) has become a source of major problems. This has occurred because newer electronic devices, such as integrated circuits, are much more susceptible to ESD problems than previous devices, such as vacuum tubes. Another trend compounding this ESD susceptibility problem is the spread of sophisticated equipment into home and office environments where ESD is quite common.
標(biāo)簽： Electronic Equipment ESD and
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
This text, ESD Basics: From Semiconductor Manufacturing to Product Use was initiated on the need to produce a text that addresses fundamentals of electrostatic discharge from the manufacturing environment to today’s products. As the manufacturing world evolves, semi- conductor networks scale, and systems are changing, the needs and requirements for reliabi- lity and ESD protection are changing. A text is required that connects basic ESD phenomena to today’s real world environment.
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
In the field of electricity, electrostatics, and circuit theory, there are many discoveries and accomplishments that have lead to the foundation of the field of electrostatic discharge (ESD) phenomenon. Below is a chronological list of key events that moved the field of electrostatics forward:
標(biāo)簽： Circuits Devices ESD and
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
ESD is a crucial factor for integrated circuits and influences their quality and reliability. Today increasingly sensitive processes with deep sub micron structures are developed. The integration of more and more functionality on a single chip and saving of chip area is required. Integrated circuits become more susceptible to ESD/EOS related damages. However, the requirements on ESD robustness especially for automotive applications are increasing. ESD failures are very often the reason for redesigns. Much research has been conducted by semiconductor manufacturers on ESD robust design.
標(biāo)簽： Guidelines Design Basic ESD
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
As we enter the next millennium, there are clear technological patterns. First, the electronic industry continues to scale microelectronic structures to achieve faster devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI) continue to be a threat to these scaled structures. This dichotomy presents a dilemma for the scaling of semiconductor technologies and a future threat to new technologies. Technological advancements, material changes, design techniques, and simulation can fend off this growing concern – but to maintain this ever-threatening challenge, one must continue to establish research and education in this issue.
標(biāo)簽： ESD-Phenomena-and-the-Reliability
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
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