DescriptionThe IMX385LQR-C is a diagonal 8.35 mm (Type 1/2) CMOS active pixel type solid-state image sensor with a squarepixel array and 2.13 M effective pixels. This chip operates with analog 3.3 V, digital 1.2 V, and interface 1.8 V triplepower supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved throughthe adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variablecharge-integration time.(Applications: Surveillance cameras)
sony CMOS傳感器datasheet，IMX178LQJ-C_Data_SheetDescriptionThe IMX178LQJ-C is a diagonal 8.92 mm (Type 1/1.8) CMOS active pixel type image sensor with a square pixelarray and 6.44 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V and interface 1.8 V triple powersupply, and has low power consumption.High sensitivity, low dark current and no smear are achieved through the adoption of R, G and B primary colormosaic filters.This chip features an electronic shutter with variable charge-integration time.(Applications: Surveillance cameras, FA cameras, Industrial cameras)
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
This example shows how you can use signal functions in the Visiondebugger to simulate a signal that is coming into one of the analog inputs of the LPC21xx.The Measure example is described in detail in the Getting StartedUser's Guide.The MEASURE example program is available for several targets:Simulator: uVision Simulator for LPC2129MCB2100: Keil MCB2100 evaluation board with ULINK debugger - Application is loaded to internal Flash. - Switch S2 (INT1) is used as GPIO and sampled (jumper positions: J1= off, J7= on) - potentiometer POT1 is sampled as AIN0 (jumper position: J2= on) - serial port COM1 parameters: 9600 baud, no parity, 8-bits, 1 stop bit, flow control noneMCB2130: Keil MCB2130 evaluation board with ULINK debugger - Application is loaded to internal Flash. - Switch S2 (INT1) is used as GPIO and sampled (jumper positions: J1= off, J7= on) - potentiometer POT1 is sampled as AIN1 (jumper position: J2= on) - serial port COM1 parameters: 9600 baud, no parity, 8-bits, 1 stop bit, flow control none
VME has been the de-facto bus standard for Commercial off the Shelf(COTS ) Circuit Card Assemblies since the 1980's. VME boards have proven to be remarkably capable of evolving to support newer technologies with innovations such as VME Subsystem Bus, PCI Mezzanine Cards(PMC's) and VME320.However, advances in technologies, appearing particularly in interconnects, have demonstratedthe need for an advance in system development. This advance needs to accommodate high speed interconnect, particularly serial interconnects, and higher power delivery in concert with better heat removal.
