GaN is an already well implanted semiconductor
technology, widely diffused in the LED optoelectronics
industry. For about 10 years, GaN devices have also been
developed for RF wireless applications where they can
replace silicon transistors in some selected systems. That
incursion in the RF field has open the door to the power
switching capability in the lower frequency range and
thus to the power electronic applications.
Compared to silicon, GaN exhibits largely better figures
for most of the key specifications: Electric field, energy
gap, electron mobility and melting point. Intrinsically,
GaN could offer better performance than silicon in
terms of: breakdown voltage, switching frequency and
Overall systems efficiency.
標簽：
GaN-on-si
Displace
and
siC
si
上傳時間：
2020-06-07
上傳用戶：shancjb
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標簽：
iec標準
上傳時間：
2021-10-21
上傳用戶：kent
