設(shè)計(jì)功率MOSFET驅(qū)動(dòng)電路時(shí)需重點(diǎn)考慮寄生參數(shù)對(duì)電路的影響。米勒電容作為MOSFET器件的一項(xiàng)重要參數(shù),在驅(qū)動(dòng)電路的設(shè)計(jì)時(shí)需要重點(diǎn)關(guān)注。重點(diǎn)觀察了MOSFET的開通和關(guān)斷過程中柵極電壓、漏源極電壓和漏源極電流的變化過程,并分析了米勒電容、寄生電感等寄生參數(shù)對(duì)漏源極電壓和漏源極電流的影響。分析了柵極電壓在米勒平臺(tái)附近產(chǎn)生振蕩的原因,并提出了抑制措施,對(duì)功率MOSFET的驅(qū)動(dòng)設(shè)計(jì)具有一定的指導(dǎo)意義。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
標(biāo)簽：
mosfet
上傳時(shí)間：
2022-04-02
上傳用戶：默默
